ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the Rutherford backscattering spectroscopy/channeling studies of epitaxial grown Ag films on Si(100) substrates irradiated with fast ions (12C++, 19F++, 28Si++) in the energy range between 0.5 and 4 MeV at 200 and −150 °C. The quality of the Ag films is improved considerably by ion irradiation. Irradiation with 0.5 MeV 28Si ions to 2×1016/cm2 at 200 °C, for example, reduces the channeling minimum yield from 55% to 6% at the Ag surface. The improvement of crystalline quality is brought about by a decrease in mosaic spread in the Ag film. Also, it is found that the higher the crystallinity, the more radiation-induced defects are produced. The mechanism involved in the irradiation-induced improvement is discussed. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117332
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