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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 646-648 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability for Pd/n-GaSb Schottky contacts is analyzed and studied. At room temperature, Pd/n-GaSb Schottky diodes have better performance, but when the annealing temperature is increased to 300 and 450 °C for 30 min, Schottky contacts gradually become ohmic contacts. From the measurement of Rutherford backscattering spectroscopy and x-ray diffraction analysis, the result indicates that the interdiffusion between palladium and gallium forming Ga5Pd is the dominant factor for degrading properties of Schottky diodes.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 642-645 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temperatures (up to 850 °C) for thermal stability evaluation and the Schottky diodes were characterized by I-V and C-V measurements. It was found that the Si to Ta ratio (x) plays an important role in the thermal stability of the Schottky diode. For small x values, there are interactions between Ta and GaAs, probably a compound formation, after high-temperature annealing. For large x values, the degradation mechanism for the Schottky diodes after high-temperature annealing appears to be the out-diffusion of Ga and As from the substrate. The best composition for a thermally stable Schottky barrier is Ta5 Si3, which shows stable Schottky characteristics after annealing with temperatures up to 800 °C.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2175-2177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant nuclear reactions, 27Al( p,α) and 27Al( p,γ), were used to determine the Al distribution in GaAlAs samples. By varying the incident proton energy, the Al concentrations at different depths were measured. The results agree with concentrations measured with other methods. The present techniques serve as nondestructive, accurate methods of profiling Al in various materials.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4503-4507 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Annealing behaviors of dislocation loops formed near the projected range (Rp loops) in 150 keV, 5×1015/cm2 As+- implanted (001)Si have been studied by both planview and cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry. Factors influencing the formation and growth of the Rp loops, such as annealing temperature and time, as well as single- and two-step annealings have been investigated. The Rp loops were observed in samples annealed at 550–900 °C for 0.5 h. The loops were also found in samples annealed at 800 °C for a time as short as 1 s and as long as 8 h. However, they were not seen in samples annealed at 470 °C for 4 h, 500 °C for 2 h, or 550 °C for 15 min. The annealing behaviors of Rp loops in single- and two-step annealed samples and in samples with an oxide capping layer were found to be consistent with the suggestion that their formation is related to the agglomeration of self-interstitials mediated by the presence of a high concentration of electrically inactive arsenic atoms.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3281-3283 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Tl–Ba–Ca–Cu–O superconducting thin films have been made by the dc magnetron sputtering followed by postannealing. In this study, a Tl-based microstrip ring resonator was fabricated by using standard microelectronic photolithographic patterning and wet chemical etching. Experimental results indicated that these ring resonators exhibit the best unloaded Q of 3269 at its resonant frequency of 3.35 GHz and some other samples display the double resonant behavior at 77 K. The frequency difference of the double resonant peaks depends on the input microwave power, and the splitting is ascribed to spatial variations in the film microstructure. The physical properties of the films are about 1 μm thick, as high as 105 K transition temperature, and greater than 105 A/cm2 current density at zero magnetic field and 77 K. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Publication Date: 2015-11-14
    Description: Capturing key electronic properties such as charge excitation gaps within models at or above the atomic scale presents an ongoing challenge to understanding molecular, nanoscale, and condensed phase systems. One strategy is to describe the system in terms of properties of interacting material fragments, but it is unclear how to accomplish this for charge-excitation and charge-transfer phenomena. Hamiltonian models such as the Hubbard model provide formal frameworks for analyzing gap properties but are couched purely in terms of states of electrons, rather than the states of the fragments at the scale of interest. The recently introduced Fragment Hamiltonian (FH) model uses fragments in different charge states as its building blocks, enabling a uniform, quantum-mechanical treatment that captures the charge-excitation gap. These gaps are preserved in terms of inter-fragment charge-transfer hopping integrals T and on-fragment parameters U (FH) . The FH model generalizes the standard Hubbard model (a single intra-band hopping integral t and on-site repulsion U ) from quantum states for electrons to quantum states for fragments. We demonstrate that even for simple two-fragment and multi-fragment systems, gap closure is enabled once T exceeds the threshold set by U (FH) , thus providing new insight into the nature of metal-insulator transitions. This result is in contrast to the standard Hubbard model for 1d rings, for which Lieb and Wu proved that gap closure was impossible, regardless of the choices for t and U .
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
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