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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 903-913 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High resolution absorption spectra of the A 3Π1u–X 1Σ+g system of I2, consisting of some 9552 lines of some 79 bands spanning the vibrational range v′=0–35 and v″=3–17, have been recorded and analyzed. A fit to them which uses the previously determined accurate molecular constants for the X 1Σ+g state yields an accurate new set of molecular constants for the A state, including the Λ doubling constants. The A-state vibrational and inertial rotational constants, as well as mechanically consistent centrifugal distortion constants, are represented by near-dissociation expansions, yielding an accurate representation of the experimental data which also provides a reliable global representation of all observed and unobserved vibration–rotation levels of this state. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5156-5159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared (IR)-absorbance spectroscopy was investigated as a technique for monitoring titanium silicide formation during the reaction of Ti films on (100) Si substrates. Films annealed to various stages of reaction were monitored by x-ray diffraction, film resistivity, and optical reflectance in order to relate the changes in the IR-absorbance spectra to reaction progress. Films at different stages of reaction showed distinctly different extinction coefficients α, and absorbance versus wave-number curves. IR absorbance was determined to be a useful indicator of reaction progress, especially in those cases where samples at different stages of the silicidation reaction have the same resistance but different absorbance behaviors. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7040-7044 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple quasi-in situ resistivity technique and its application to the study of C49 to C54 TiSi2 conversion in narrow (0.1-1.0 μm) lines. This technique allowed comparison of both aggregate conversion versus time at temperature behavior and individual-line conversion versus time behavior for silicide lines of different linewidths. As linewidth decreased, the aggregate conversion versus time at temperature behavior slowed, and the conversion behaviors of individual lines having the same linewidth became more variable. Both of these observations are consistent with a nucleation-site-density controlled reaction under conditions of low nucleation site density. Correlations were also found between individual line behaviors and resistance to agglomeration; resistance to agglomeration (for 0.35–1.0 μm lines already in the C54 phase) was highest for lines which had "prompt'' conversion behaviors (as measured by the sheet resistance drop during the first minute of the conversion anneal). Additional data concerning the sensitivity of the initial sheet resistances to formation anneal conditions and linewidth is also briefly discussed. © 1995 American Institute of Physics.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ resistance versus temperature or time for reactions between 32 and 57.5 nm of titanium and undoped or doped polycrystalline silicon (boron, arsenic, or phosphorus, 7.9×1019–3.0×1020/cm3) has been measured and no clear correlation was found between the activation energy for the formation of the industrially important low-resistance C54-TiSi2 phase and its formation temperature. It is also demonstrated that with certain moderate doping levels typical of complementary metal-oxide-semiconductor manufacturing, boron or phosphorus-doped polycrystalline silicon can delay the formation of C54-TiSi2 more than arsenic-doped polycrystalline silicon. Finally, by using in situ resistance measurements, it is demonstrated that the "two-step'' thermal annealing process similar to a salicide process requires less thermal annealing time at high temperatures to form C54-TiSi2 than a single "one-step'' thermal anneal at the same temperature. © 1994 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 952-956 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple microwave technique is described that accurately measures the instantaneous, local thickness of a film of liquid flowing down the inner wall of a tube while at the same time an adjacent current of gas flows in the opposite direction. Such a nonintrusive measurement technique is significant because of the extensive occurrence of similar liquid/gas flows in chemical process and energy systems.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 1278-1295 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical and numerical model is formulated to describe the instability and the long-time evolution of both gravity-driven and surface-shear-stress-driven thin coating films. A single evolution equation, of higher-order diffusive type, models the flow for either problem. It is derived using the lubrication approximation. For partially wetting systems, the effect of finite contact angle is incorporated in the equation using a particular disjoining pressure model. The base state, in each case, is a two-dimensional steadily propagating capillary front. Slight perturbations of the base state, applied along the front, initiate the fingering instability. Early-time results accurately reproduce the wavelengths of fastest growth and the corresponding eigenmodes as reported in published linear stability analyses. As time proceeds, depending on parameter values, various fingering patterns arise. For conditions of perfect wetting with the substrate downstream of the moving front covered with a thin precursor layer, predicted nonlinear finger evolution agrees well with published experiments. The ultimate pattern, in this case, is a steadily translating pattern of wedge-shaped fingers. Alternatively, for partially wetting systems that exhibit sufficiently large static contact angles, long straight-sided fingers or rivulets are formed. Finally, for larger contact angles, or at relatively low speeds, we predict that the flowing rivulets will become unstable and break up into strings of isolated droplets. © 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 13 (2001), S. 3089-3092 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A functional is presented for the stored energy content, or potential energy, of a nonuniform distribution of surfactant on a liquid interface. This is the energy available to drive fluid motion using surface-tension-gradient forces. The functional is shown to be non-negative. An energy evolution equation is derived for the motion of a thin liquid film, whose shape evolves under the combined influence of surface tension, viscous, and surfactant effects. Numerical calculations show the time history of these global energy components. Results are relevant to the flow behavior of wetting agents, soap films, foams, and emulsions with possible applications in the industrial and biological worlds. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4731-4733 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An improved wire-type chromel–alumel microthermocouple with a disk-shaped junction is described. In this design, the 20 μm diameter thermocouple wires are installed taut between two 127 μm diameter prongs, one of chromel and the other of alumel. The disk junction, of 0.1 mm diameter and 4 μm thick, is located approximately midway between the prong tips. Time constants of two microthermocouples are reported. The two microthermocouples differ from each other primarily in the length of the prongs. The microthermocouple with the longer prongs exhibits faster response, its time constant in turbulent flow of liquid Refrigerant-113 (a poor conductor of heat) being less than 2 ms. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2462-2465 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A UHF/microwave technique that measures the wave propagation velocity along a modified microstrip line to determine the thickness of an adjacent film of water (up to about 1 mm) on a metallic surface is described. The technique may be extendable to the measurement of the thickness of coatings on both metallic and nonmetallic surfaces.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2947-2951 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A fast-response chromel-alumel (and chromel-constantan) microthermocouple is described and its dynamic characteristics are measured. The microthermocouple features a microdisk junction 0.08 mm in diameter and 2.5 μm thick. Its time constant in turbulent flow of liquid Refrigerant-113 (a poor heat conductor) is measured to be ∼4.6 ms. This time constant was reduced to ∼3.4 ms with a phase-lead compensation circuit. It was possible to distinguish between vapor and liquid phase temperatures in turbulent subcooled boiling flow of Refrigerant-113 with the compensated microthermocouple.
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