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  • 1
    Electronic Resource
    Electronic Resource
    Energetic proton generation in ultra-intense laser–solid interactions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 542-549 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An explanation for the energetic ions observed in the PetaWatt experiments is presented. In solid target experiments with focused intensities exceeding 1020 W/cm2, high-energy electron generation, hard bremsstrahlung, and energetic protons have been observed on the backside of the target. In this report, an attempt is made to explain the physical process present that will explain the presence of these energetic protons, as well as explain the number, energy, and angular spread of the protons observed in experiment. In particular, we hypothesize that hot electrons produced on the front of the target are sent through to the back off the target, where they ionize the hydrogen layer there. These ions are then accelerated by the hot electron cloud, to tens of MeV energies in distances of order tens of μm, whereupon they end up being detected in the radiographic and spectrographic detectors. © 2001 American Institute of Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333697
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  • 2
    Electronic Resource
    Electronic Resource
    Domain inversion in KTiOPO4 crystal near the Curie point (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4823-4826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microscopic mechanism of the outdiffusion-induced domain inversion in KTiOPO4 crystals near the Curie point without applying an external electric field is developed. It is described in terms of a built-in electric field, for reasons of a gradient of donorlike centers. The predicted dominant role of the n-type charges is proved by experimental observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357255
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature thermoluminescence of cuprate high-temperature superconductors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2712-2714 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoluminescence (TL) of three different high-temperature superconducting materials, namely ErBaCuO, YbBaCuO, and (Bi,Pb)SrCaCuO, has been measured after x irradiation at 20 K. This comparative low-temperature TL investigation has revealed a close similarity in the structure of the glow curves for all three compounds in the 20–300 K temperature range. Strongest glow peaks are shown to appear below the superconducting transition temperature. The origin of the various glow peaks is discussed in terms of radiative recombination of thermally released holes with trapped electron centers. The model is supported by further TL measurements of the ErBaCuO compound, thermally treated, in reducing and oxidizing atmospheres. It is demonstrated that the TL intensity is closely related to the oxygen stoichiometry of the material, namely, the oxygen vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356202
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  • 4
    Electronic Resource
    Electronic Resource
    Defect-property correlations in garnet crystals. IV. The optical properties of nickel-doped yttrium aluminum garnet (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1366-1369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nickel-doped yttrium aluminum garnet (Ni:YAG) has an optical absorption spectrum characteristic of Ni+3 located on octahedral sites with an absorption peak at 420 nm. When annealed in reducing atmospheres, the nickel converts to Ni+2 and the 420-nm absorption peak vanishes. Codoping with zirconium fixes the nickel into the Ni+2 state under all annealing conditions. Under these circumstances, some of the nickel is believed to enter the lattice on tetrahedral sites. The characteristic 320-nm defect emission is observed in all crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344437
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  • 5
    Electronic Resource
    Electronic Resource
    Size dependence of the orientational disorder and melting transitions of finite N2 islands deposited on graphite (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3744-3748 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The orientational order–disorder and melting transition temperatures for quasi two-dimensional islands of N2 molecules deposited on graphite are calculated for sizes 1≤N≤256 molecules, using a Monte Carlo procedure with free surface boundary conditions. These transition temperatures are strong functions of N, and the values for 256 molecules are close to those measured experimentally for fractional macroscopic monolayers. Calculated results show that the two sublattice herringbone orientational structure persists up to the orientational transition temperature, above which hindered planar rotation occurs. The registered (square root of)3×(square root of)3 mass center structure exists until melting, where the islands disassociate. These features are consistent with experiment. Below melting, the root mean square fluctuations of the mass centers away from their (square root of)3×(square root of)3 equilibrium values are substantially larger than for bulk N2 or for small three-dimensional rare gas clusters. The fluctuations are also substantially larger for edge molecules than for those in the center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462955
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  • 6
    Electronic Resource
    Electronic Resource
    Fermi level control and deep levels in semi-insulating 4H–SiC (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5040-5044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4H–SiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus inverse temperature results from Hall effect measurements up to 1000 K indicated the samples were dominated by one of two deep levels near midgap. In addition to the deep donor level of substitutional vanadium, Ec−1.6 eV, we observed another level at Ec−1.1 eV in some samples, indicating that levels other than the vanadium donor can pin the Fermi level in semi-insulating SiC. Optical admittance measurements on the semi-insulating material indicate the presence of levels at Ec−1.73 and 1.18 eV that were previously observed in conducting samples with this technique and we attribute these levels to the same defects producing the 1.1 and 1.6 eV levels seen by Hall effect. Secondary ion mass spectroscopy measurements of dopant and impurity concentrations are reported. Even though vanadium is present in all of these samples, along with other impurities we are at present unable to definitively identify the 1.1 eV level. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371476
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  • 7
    Electronic Resource
    Electronic Resource
    Defect property correlations in garnet crystals. II. Electrical conductivity and optical absorption in Ca3Al2Ge3O12 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5320-5324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conductivity and ionic transference measurements performed at varying temperatures and partial pressures of oxygen show that CALGAR (Ca3Al2Ge3O12), a luminescent garnet, is a mixed ionic-electronic conductor. An activation energy of 1 eV for ionic diffusion is measured. An absorption band at 400 nm, whose magnitude can be controlled by varying the annealing atmosphere, is attributed to an O− center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334848
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  • 8
    Electronic Resource
    Electronic Resource
    Asymmetric secondary electron emission flux in ferroelectric KTiOPO4 crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 7166-7168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that secondary electron emission current from ferroelectric domains with opposite directions of spontaneous polarization in ferroelectric KTiOPO4 crystals (KTP) is substantially asymmetric. The effect originates from asymmetry of elementary electron processes in noncentrosymmetric crystals. A nondestructive method of ferroelectric domain observation by secondary electron emission microscopy in KTP crystals is developed, which enables observation of a domain grating in periodically poled KTP frequency doubler. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363741
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of copper related defects on the electron transport properties of semi-insulating CdSe (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1234-1236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semi-insulating CdSe crystals with a reduced concentration of electron trapping centers have been grown and characterized. The existence of complex electron traps is attributed to the presence of trace copper impurity. The trap density, trap level depth, trapping time, cross section for trapping of electrons, and the electron mobility have been determined for the first time on one single CdSe crystal using the combination of space-charge-limited currents (SCLC's) method, standard nuclear measurements, and the transient charge technique (TCT). The advantages for applications of semi-insulating CdSe as a novel material for spectrometer grade nuclear radiation detectors are emphasized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99166
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic probe imaging of β-SiC thin films grown on (100) Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1495-1497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-scale imaging has been achieved on β-SiC surfaces using scanning tunneling microscopy in air. SiC films were grown on Si (100) substrates by chemical vapor deposition using the carbonization reaction of the surface with C3H8, followed (for films thicker than 100 nm) by the reaction of C3H8 and SiH4. For a relatively thick SiC (∼6 μm) film, the average nearest-neighbor surface atomic spacing measured was 3.09 A(ring), which is very close to the nominal value of 3.08 A(ring). Several of the thinner (〈100 nm) SiC films exhibited significantly larger atomic spacings, indicating the strong effect of the larger atomic spacing (nominally 3.84 A(ring)) of the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107282
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