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  • American Institute of Physics (AIP)  (13)
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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence in modulation-doped pseudomorphic high electron mobility transistor AlxGa1−xAs/ InyGa1−yAs/GaAs structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7535-7540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the temperature-dependent characteristics of photoluminescence emission in modulation δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs structures. Transition energies are analyzed using a self-consistent solution of the coupled k⋅P Hamiltonian–Poisson equation. At low temperatures, dominant emissions are due to the transitions from the first electron subband to the first heavy-hole subband and from the second electron subband to the first heavy-hole subband irrespective of the location of modulation doping. The second hole subband related transitions associated with the first electron subband or the second electron subband emerges with increasing temperature depending on the location of doping. The relative intensities of the transitions from the first and second electron subbands to the first heavy-hole subband transitions are analyzed as a function of the Fermi energy position. An excellent agreement is found between the measurements and calculations. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357985
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 328-331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conventional Hall-effect determination of the two-dimensional electron gas (2DEG) concentration n2D in pseudomorphic high electron mobility transistor structures is invalid because of interference from the highly doped GaAs cap. Furthermore, the usual methods of dealing with this cap-interference problem, namely, (1) etching off the cap totally, (2) etching the cap until the mobility reaches a maximum, or (3) growing a separate structure with a thin, depleted cap, in general, give n2D values that are too low. However, we show here that magnetic-field-dependent Hall (M-Hall) measurements can separately determine the carrier concentrations and mobilities in the cap and 2DEG regions, as verified by comparison with a self-consistent, four-band, k⋅p calculation and also by electrochemical capacitance-voltage measurements in structures with different cap and spacer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357148
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of the transverse lasing mode in vertical-cavity lasers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2279-2286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data are presented along with calculations which describe the near-threshold transverse modes in AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers with two different Bragg reflector systems. The Bragg reflector systems are composed of either AlAs/GaAs quarter-wave stacks or a combination of AlAs/GaAs and ZnSe/CaF. The temperature dependence of the lasing mode is studied for three different structures, and it is shown that higher-order lasing modes are favored with strong cavity detuning when the cavity resonance exists at a wavelength greater than the bulk emission peak. Important aspects of the lasing behavior are described by calculating the spontaneous mode which occurs at the lasing wavelength. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358816
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  • 4
    Electronic Resource
    Electronic Resource
    Bistability in an AlAs-GaAs-InGaAs vertical-cavity surface-emitting laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating bistability in the current versus voltage and light versus current characteristics of a quantum well vertical-cavity surface-emitting laser. The laser structures are grown using molecular beam epitaxy, and use an AlAs/GaAs Bragg reflector for the n-side mirror, and a combination of AlAs/GaAs and either ZnSe/CaF2 or Si/SiO2 quarter-wave dielectric layers for the p-side mirror. Regrowth of molecular beam epitaxial layers is used for current funneling into the device active region. Light emission is measured from the epitaxial side of the device, and threshold currents range from 2 to 4 mA. The bistability stems from switching in a parasitic pnpn structure triggered by lasing in the vertical-cavity laser, with the observed hysteresis width influenced by leakage current around the device active region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104811
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  • 5
    Electronic Resource
    Electronic Resource
    ZnSe/CaF2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7430-7434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on an electron-beam evaporated ZnSe/CaF2 distributed Bragg reflector for use on a vertical-cavity surface-emitting laser operating at a wavelength ∼0.98 μm. Mirror characteristics are measured using optical transmission and reflectivity for quarter-wave structures with varying numbers of pairs from one to five. The optical characteristics of the ZnSe/CaF2 quarter-wave stack is compared to similar structures of electron-beam evaporated Si/SiO2 reflectors. The ZnSe/CaF2 mirror is found to be superior to the Si/SiO2 mirror in terms of both higher reflectivity and lower optical loss for all structures investigated. Comparison is also made between ZnSe/CaF2 and Si/SiO2 mirrors in the continuous-wave performance of AlAs-GaAs-InGaAs quantum-well vertical-cavity surface-emitting lasers. Superior laser performance is achieved with the ZnSe/CaF2 mirror in terms of threshold current and lasing efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347557
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum well (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1858-1860 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a strong influence of a closely spaced AlAs/GaAs distributed Bragg reflector on the spontaneous emission characteristics of an InGaAs-GaAs quantum well. The mirror to quantum well spacings on different crystal samples correspond to optical path lengths of either 1/4, 1/2, or 3/4 of the emission wavelength. The samples are characterized using photoluminescence, electroluminescence, and reflectivity measurements. Spontaneous emission is found to be greatly enhanced for a 1/2 wavelength spacing, while 1/4 and 3/4 spacings suppress the spontaneous emission by a factor of (approximately-greater-than)1000.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104120
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  • 7
    Electronic Resource
    Electronic Resource
    InGaAs-GaAs quantum well vertical-cavity surface-emitting laser using molecular beam epitaxial regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1122-1124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a design and fabrication process for the realization of high-efficiency, low-threshold vertical-cavity InGaAs-GaAs quantum well lasers with light emission through the top (epitaxial) surface. Crystal growth is performed using a two-step molecular beam epitaxial growth process to utilize lateral current injection into the device active region. The device structure allows the top surface (emission side) reflector to be optimized (for either high efficiency or low threshold) after crystal growth through the deposition of electron beam evaporated dielectric layers. Maximum continuous-wave output power in excess of 1.2 mW at 300 K, and differential quantum efficiency greater than 25% (3.9 mA threshold) are demonstrated. Low-threshold values of 2.3 mA are measured on devices with increased mirror reflectivity (through the addition of dielectric layers).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104390
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  • 8
    Electronic Resource
    Electronic Resource
    Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1611-1613 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented characterizing the transverse mode behavior of AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers fabricated using a native-oxide process. The native-oxide process results in laser diodes with active regions defined to be 10, 8, and 4 μm squares. We show that the transverse lasing mode is influenced by mirror reflectivity, with significant mode changes occurring with drive current for 8–10 μm devices in the ranges of one to four times threshold. In smaller devices of 4 μm square dimension, the transverse mode at threshold appears as a lowest order mode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112927
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  • 9
    Electronic Resource
    Electronic Resource
    Low threshold voltage continuous wave vertical-cavity surface-emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2027-2029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating a design and fabrication process for the realization of low-threshold, high-output vertical-cavity surface-emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular-beam epitaxial regrowth over a 1000-A(ring)-thick patterned layer of low growth temperature AlGaAs incorporated into the p-type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15-μm-diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage of only 1.8 V at a threshold current of 1.9 mA for 10-μm-diam devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109494
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  • 10
    Electronic Resource
    Electronic Resource
    Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2703-2705 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work shows how electrochemical capacitance-voltage (EC-V) measurements can be used to evaluate delta-doped pseudomorphic high electron mobility transistor material. These EC-V measurements are compared with magnetic-field-dependent Hall effect (M-Hall) measurements and a self-consistent Poisson/k⋅p calculation of the band structure and electron concentration. The EC-V technique can clearly delineate the cap layer, the delta-doped layer, and the InxGa1−xAs channel layer, whereas the M-Hall method characterizes only the cap and InxGa1−xAs channel layers. The amount of electron charge seen by the EC-V and M-Hall measurements show good agreement with theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111471
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