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  • 1
    Electronic Resource
    Electronic Resource
    Planar channeling in GaAs/InxGa1−xAs/GaAs strained-layer structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1510-1515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar {110} channeling measurements with 1–2-MeV He+ ions have been used to investigate strained-layer structures of (100) GaAs/InxGa1−xAs/GaAs with x=0.07–0.17. Beam-steering effects in the surface GaAs layer are observed to have a major influence on {110} planar angular scans carried out in the InxGa1−xAs layers resulting generally in a double or more complex-shaped angular dip. A simple computer simulation has been developed which determines the main features of the experimental angular scan data. Comparison of simulation and experimental data allows a reasonable determination of the kink angle θK between the {110} planes for the surface GaAs and underlying strained layer. Only in limiting cases is it possible to unequivocally determine θK from the experimental data alone. They are as follows: (i) when θK=0; (ii) θK〉2ψ pc (ψ pc is the critical angle for {110} planar channeling); and (iii) when the thickness t of the top layer is thin (t(very-much-less-than)2d/ψ pc, where d is the {110} interplanar spacing).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342966
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  • 2
    Electronic Resource
    Electronic Resource
    Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3021-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361241
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  • 3
    Electronic Resource
    Electronic Resource
    Quantum-well strain and thickness characterization by degree of polarization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7640-7645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsP/InP single quantum wells grown by gas-source molecular-beam epitaxy have been characterized for their strain and thickness using degree of polarization (DOP) of the edge emission photoluminescence at room temperature. The DOP is a measure of the relative strengths of TE- and TM-polarized e–hh and e–lh transitions. The value of the DOP increases with a decrease in thickness of the well and as the strain varies from tension to compression. For example, we observe a variation of DOP from 20% to 79% when the strain varies from 1% tension to 1% compression for a 30 A(ring) layer and from 27% to 62% when the thickness of a lattice-matched well is varied from 100 to 30 A(ring). A simple theoretical model is used to predict this trend. We show that this technique provides a sensitive measure of the variations in the strain and thickness of quantum wells. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362427
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  • 4
    Electronic Resource
    Electronic Resource
    Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359262
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  • 5
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5739-5742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations based on a valence force field model have been performed to explain experimental results on the degree of polarization of photoluminescence from the [001] direction of InP/InGaAs/InP quantum wells grown on (001) substrates by gas-source molecular beam epitaxy. The results of the simulations indicate an anisotropic strain field owing to fundamental, growth-related differences between the interfaces of the quantum well. The anisotropic strain field is associated with strained Ga–P, Ga–As, and In–As bonds at the InP/InGaAs/InP interfaces. The results of the simulations are in agreement with measurements of the degree of polarization of photoluminescence from the [001] direction of the quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368839
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365479
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3199-3201 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and cross-sectional transmission electron microscopy, combined with x-ray compositional analysis, have been used to study quantum well intermixing in an InGaAsP quantum well laser structure. Quantum well intermixing is induced by capping the samples with a layer of InP grown at low temperature (300 °C) and subjecting them to rapid thermal anneal treatments in the temperature range 600–800 °C. The presence of the low temperature InP layer, which contains an abundance of nonequilibrium point defects, significantly enhances the intermixing on annealing, producing a large band-gap blueshift. The microscopy results show good broadening with smeared interfaces, and the compositional analysis suggests this can be attributed to the intermixing of group V atoms. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374231
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  • 8
    Electronic Resource
    Electronic Resource
    Refractive indices of InGaAsP lattice-matched to GaAs at wavelengths relevant to device design (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2791-2793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractive indices of In1−xGaxAsyP1−y grown lattice-matched to GaAs by gas-source molecular-beam epitaxy, have been measured by variable angle spectroscopic ellipsometry. Indices in the transparent regime of these quaternaries, at 980 and 808 nm (relevant to the design of pump sources for erbium-doped fiber amplifiers and Nd:YAG lasers, respectively) and at 850 nm, are presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126477
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1694-1696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects in doped InGaAsN ((approximate)1.5% N) grown by gas source molecular-beam epitaxy are examined through Hall effect measurements. The behavior of the carrier concentration as a function of N content and doping concentration is examined. A Fermi statistics model based upon the experimental results has identified the energy levels and concentrations of three traps in as-grown InGaAsN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355011
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  • 10
    Electronic Resource
    Electronic Resource
    Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for quantifying the degree to which the uneven carrier distribution affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structures. The uneven carrier distribution is found to affect the performance of devices with as few as two quantum wells and decreases the net gain for wells on the n side of a ten quantum well structure by more than a factor of two. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123110
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