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  • 1
    Electronic Resource
    Electronic Resource
    Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1109-1115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He++ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360909
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  • 2
    Electronic Resource
    Electronic Resource
    Tantalum-based diffusion barriers in Si/Cu VLSI metallizations (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1369-1373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers between Cu overlayers and Si substrates. Electrical measurements on Si n+p shallow junction diodes demonstrate that a 180-nm-thick Ta film is not an effective diffusion barrier. For the standard test of 30-min annealing in vacuum applied in the present study, the Ta barrier fails after annealing at 500 °C. An amorphous Ta74Si26 thin film improves the performance by raising the failure temperature of a 〈Si〉/Ta74Si26(100 nm)/Cu(500 nm) metallization to 650 °C. Unparalled results are obtained with an amorphous ternary Ta36Si14N50 thin film in the Si/Ta36Si14N50(120 nm)/Cu(500 nm) and in the Si/TiSi2(30 nm)/Ta36SiN50(80 nm)/Cu(500 nm) metallization that break down only after annealing at 900 °C. The failure is induced by a premature crystallization of the Ta36Si14N50 alloy (whose crystallization temperature exceeds 1000 °C) when in contact with copper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349594
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal oxidation of amorphous ternary Ta36Si14N50 thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2828-2832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation kinetics of reactively sputtered amorphous Ta36Si14N50 thin films are studied in dry and wet ambient in the temperature range of 650–850 °C by backscattering spectrometry, Dektak profilometer, and x-ray diffraction analyses. The dry oxidation is well described by a parabolic time dependence which corresponds to a process controlled by the diffusion of the oxidant in the oxide. The growth of the oxide in wet ambient is initially very rapid and then proceeds linearly which means that the process is reaction limited. Both oxidation rates are thermally activated. The activation energies are 2.0 eV for dry and 1.4 eV for wet ambient. The pre-exponential factors are 0.17×1016 A(ring)2/min and 7.4×108 A(ring)/min, respectively. Both the dry and wet oxidation of the amorphous ternary Ta36Si14N50 film result in the formation of an x-ray amorphous Ta14Si5.5O80 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349345
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  • 4
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 664-671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364206
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  • 5
    Electronic Resource
    Electronic Resource
    Reactively sputtered Ti-Si-N films I. Physical properties (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 656-663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364133
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  • 6
    Electronic Resource
    Electronic Resource
    Performance of tantalum-silicon-nitride diffusion barriers between copper and silicon dioxide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2152-2154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous, 10-nm-thick tantalum-silicon-nitride (TaSiN) layers were found to be effective diffusion barriers between copper and thermal silicon dioxide. The films were electrically evaluated using TaSiN/Cu/TaSiN-oxide-silicon capacitors and bias thermal stress (BTS) treatments; the capacitors were stressed at 300 °C with electric fields in excess of 1 MV/cm for up to 80 h. High frequency capacitance versus voltage characteristics were recorded at room temperature before and after BTS treatment. Based upon comparisons between these (C–V) curves, barrier failure was concluded to have not occurred. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114750
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