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  • American Institute of Physics (AIP)  (15)
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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of the near-interface region of chemical vapor deposited diamond films on silicon by backscatter Kikuchi diffraction (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1781-1783 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice orientations near the interface of chemical vapor deposited diamond films on Si(001) have been studied by orientation imaging microscopy. This technique is based on the automated analysis of electron backscatter Kikuchi diffraction patterns. The electron beam has been scanned in discrete steps over the reverse side of the diamond film after having removed the substrate. The obtained data have allowed us to determine the texture and to visualize quantitatively the orientational arrangement of and among individual diamond crystallites in the near-interface region. A comparison with the orientation of the substrate has proved the existence of epitaxially nucleated grains. A high amount of twinned diamond has been deduced from the pole figures and verified by analysis of orientation correlations between neighboring crystallites. Moreover, the grain boundary maps have allowed us to monitor and quantify directly the occurring twin boundaries. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112867
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis of epitaxial β-SiC by C60 carbonization of silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2070-2073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By deposition of C60 on silicon at temperatures smaller than 1000 °C the formation of thin epitaxial β-SiC films on Si was successful. This low-temperature regime can be important for the application of SiC in microelectronic devices. C60 was deposited on Si(001) and Si(111) in ultrahigh vacuum at constant deposition rates for some hours. The temperature of the Si substrates ranged between 800 and 900 °C. The thickness and the composition of the formed layers are determined by Rutherford backscattering (RBS). The thickness of the layers varied between about 50 nm and 1 μm depending on the deposition parameters. From the shape of the RBS spectra and the x-ray-diffraction (XRD) scans, only β-SiC can be identified. The aitch-theta–2aitch-theta XRD spectra show preferred orientation of β-SiC on Si(001) and Si(111), respectively. Additional XRD pole figure measurements demonstrate the heteroepitaxial growth of β-SiC on Si. The orientational relationships β-SiC(001)[110](parallel)Si(001)[110] and SiC(111)[1¯10](parallel)Si(111)[1¯10] can be extracted. The formation of growth defects (twins) can be observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360184
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  • 3
    Electronic Resource
    Electronic Resource
    Study of the initial growth phase of chemical vapor deposited diamond on silicon(001) by synchrotron radiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1907-1910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very thin diamond films (thickness ∼0.1 μm) have been investigated by x-ray diffraction pole figure measurements using synchrotron radiation in order to understand the mechanism of heteroepitaxial diamond nucleation and the first steps of film growth on silicon(001) substrates. The diamond layers consist of an epitaxially aligned component with a crystallographic orientation identical to the substrate. The initial orientational spread of the grains around the perfect epitaxial orientation prior to any modification by a subsequent textured growth step has been determined. In the studied temperature range for the nucleation step the misalignment decreases slightly with increasing temperature. Besides the epitaxial crystallites their corresponding twins of first and second order have been found. The intensity distribution of the pole figures indicates that the process of twinning plays a dominating role in the initial growth stage which shows a tendency to become even more pronounced for higher substrate temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361080
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  • 4
    Electronic Resource
    Electronic Resource
    Structural characterization of the temperature dependence of C60-thin films on mica (001) by x-ray diffraction (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3337-3340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin C60 films have been deposited on mica(001) substrates by thermal evaporation at substrate temperatures between room temperature and 200 °C and at a constant deposition rate. The influence of the substrate temperature on the growth of C60-thin films has been systematically investigated by x-ray diffraction. θ–2θ measurements of the (111) peaks show a decrease of the full width at half-maximum (FWHM) with increasing substrate temperature, leading to a minimum FWHM of 0.15° for a substrate temperature of 200 °C. Oriented films with an out-of-plane mosaic spread of Δω=0.2° could be grown at a substrate temperature of 150±25 °C. It can be shown that the in-plane epitaxial arrangement C60(111)(parallel)mica(001) is determined by the seeding conditions and is independent of the substrate temperature. An increasing substrate temperature enhances the epitaxial alignment of the C60 crystals oriented with a {111} face parallel to surface and also the azimuthal alignment of the twins which are rotated by 60° about the surface normal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357456
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  • 5
    Electronic Resource
    Electronic Resource
    Texture analysis of chemical vapor deposited diamond films on silicon by the component method (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4765-4770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemical vapor deposition. X-ray diffractometry has been employed for pole figure measurements which have been evaluated by the component method. This technique can be applied to multiphase materials with overlapping pole figures. It decomposes the texture into components by identifying preferred directions in the pole density distribution. Thereby the textures of both diamond on Si(001) and on Si(111) have been reproduced quantitatively elucidating the heteroepitaxial orientational relationship and the occurrence of twinning. The volume fractions of both epitaxially oriented diamond crystallites and their twins of first order have been determined. It is shown that under the employed nucleation and growth conditions twinning is more pronounced for diamond on Si(111) than on Si(001). Furthermore, the fraction of randomly oriented crystallites in both textures has been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359412
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  • 6
    Electronic Resource
    Electronic Resource
    Equipment for in situ resistivity and x-ray diffraction studies during ion implantation at temperatures between 4 K and 1270 K (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3961-3964 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An instrument is presented which was designed for comprehensive in-situ analysis of phase formation and transformation during the ion implantation process. An implanter end station with heatable He-cryostat as a sample holder was built. A temperature range from 4 to 1270 K is covered by the sample holder so that temperature can be varied during implantation or subsequent annealing in high vacuum. Both x-ray diffraction and four-point resistivity measurement are installed as in-situ investigation techniques. In this way a detailed study of structural changes and defect kinetics during ion bombardment is now possible. The whole instrument has been successfully tested. Examples of carbon ion implantation in titanium and iron are given. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147299
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  • 7
    Electronic Resource
    Electronic Resource
    A new apparatus for photon- and ion-beam-assisted deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1083-1085 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Over the last decade ion-beam-assisted deposition (IBAD) has become a well-known technique for deposition of thin films because of its ability to control properties of coatings. A new IBAD system is introduced which includes a facility to illuminate samples by UV light during the deposition process in order to enhance motion of deposited atoms and interfacial reactions between substrate and coating. The IBAD system consists of two vacuum chambers, the preparation chamber and the analysis chamber, which are connected by a straight tube for sample transfer. Samples may be moved through the tube between the two chambers by a linear feedthrough. The preparation chamber includes a filamentless rf ion source, an electron-beam evaporator, and a tube with a nozzle delivering reactive gases near the sample during deposition. In addition to the ion-assisted deposition process, a technique based on photon irradiation has been employed to obtain significant improvements of structure and properties of deposited metal layers. As these films reflect a large fraction of light in the visible range, we use UV-light illumination. The samples are irradiated by UV light with a mercury arc lamp during deposition. To achieve the high degree of process automation most process parameters are controlled with a computer system. The analysis chamber includes a reverse view LEED/AES system, which is used to analyze composition and surface structure of thin the films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146050
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray imaging of polycrystalline materialsa) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3560-3562 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel method yielding simultaneous information about location and orientation of the crystallites in a polycrystalline specimen has been developed and succesfully applied to the investigation of thin diamond films deposited on silicon. The experiment uses the parallel beam from a synchrotron radiation source and a microchannel plate as collimator in front of an image plate detector. Exposure times of only a few minutes could be realized. The spatial resolution was 0.375 mm but can easily be improved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145469
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  • 9
    Electronic Resource
    Electronic Resource
    Anisotropic strain in nitrided austenitic stainless steel (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3323-3329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen treatment of austenitic stainless steels at temperatures around 300–400 °C leads to the formation of a hard and corrosion resistant phase called expanded austenite. The most puzzling feature of this phase is an anisotropic lattice expansion where the expansion along the (100) is about 20% larger than for the (111) direction. In this report an investigation of the lattice expansion of austenitic stainless steel after nitrogen plasma immersion ion implantation by x-ray diffraction is presented. Pole figure measurements as well as θ/2θ scans at different polar angles were performed. Comparing the data with three different structural models, fcc, tetragonal, and triclinic, it can be concluded that none of them yields good agreement with the data, so that the crystallographic characterization is still open. However, a model for the atomic origin of the observed lattice expansion based on the anisotropic Young's modulus, which is found for every fcc metal, is presented, showing good agreement with the measured data as well as data taken from the literature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289520
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  • 10
    Electronic Resource
    Electronic Resource
    Chemical defect explanation for the effect of postdeposition treatments on CuInSe2 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1624-1627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenation and oxygenation of CuInSe2 have been studied by x-ray photoelectron spectroscopy in order to investigate the defect properties. Initially oxidized p-type material was type-converted by low-energy hydrogen ion implantation. A defect model has been proposed suggesting the reactivation of selenium vacancies (VSe) as well as the creation of additional indium copper antisites (InCu). For cleaved samples, a direct influence of hydrogen on the net-donor concentration has been assumed. The resulting Cu-depleted surface is the result of the downward band bending and the migration of Cu into the bulk by the built-in electric field. The subsequent oxidation leads to a passivation of VSe and InCu, and hence yields a reconversion of the conductivity type. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428096
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