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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous measurement of the thermal conductivity and thermal diffusivity of unconsolidated materials by the transient hot wire method (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1394-1398 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes a new design for the transient hot wire method that can obtain the thermal conductivity and thermal diffusivity of unconsolidated materials. In this method, the thermal conductivity is determined from the slope of the temperature rise versus time of an electrically heated wire. The temperature rise is detected as the unbalanced voltage of a precision Wheatstone bridge. This voltage is read by a microcomputer via a high-speed analog-to-digital converter. The instrument was designed so that measurements can be taken over a temperature range of 20–200 °C and a pressure range of atmospheric down to 10 mTorr. Tests using glycerin indicate an accuracy of 1% for the conductivity and 6% for the diffusivity and a precision of 0.4% for the conductivity and 4.5% for the diffusivity. Measurements have also been made on materials such as 50-μ glass beads and unconsolidated spent oil shale.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138491
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  • 2
    Electronic Resource
    Electronic Resource
    A common-path heterodyne interferometer for surface profiling in microelectronic fabrication (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2455-2466 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design of a common-path heterodyne laser interferometer for the surface profiling of micron-sized photopatterned features during the microelectronic fabrication process. The common-path design of the interferometer's reference and measurement arms effectively removes any path length difference in the measurement which can be attributed to the movement of the target surface. It is shown that repeated surface profiling during the ion milling process allows the difference in etch rates between the photoresist layer and the exposed portions of the underlying substrate layer to be monitored online. A prototype apparatus has been assembled and results demonstrating the usefulness of the device are reported. The surface profiles of both a photopatterned nickel–iron trench and an unmasked aluminum trench are measured and compared to those obtained using a stylus-based scanning profiler and an atomic force microscope. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367353
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