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  • 1
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    Bulk crystal growth and electronic characterization of the 3D Dirac semimetal Na3Bi (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-02-18
    Description: High quality hexagon plate-like Na 3 Bi crystals with large (001) plane surfaces were grown from a molten Na flux. The freshly cleaved crystals were analyzed by low temperature scanning tunneling microscopy and angle-resolved photoemission spectroscopy, allowing for the characterization of the three-dimensional (3D) Dirac semimetal (TDS) behavior and the observation of the topological surface states. Landau levels were observed, and the energy-momentum relations exhibited a linear dispersion relationship, characteristic of the 3D TDS nature of Na 3 Bi. In transport measurements on Na 3 Bi crystals, the linear magnetoresistance and Shubnikov-de Haas quantum oscillations are observed for the first time.
    Electronic ISSN: 2166-532X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by American Institute of Physics (AIP)
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  • 2
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    Local phonon mode in thermoelectric Bi2Te2Se from charge neutral antisites (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-01-29
    Description: Local modes caused by defects play a significant role in the thermal transport properties of thermoelectrics. Of particular interest are charge-neutral defects that suppress thermal conductivity, without significantly reducing electrical transport. Here, we report a temperature dependent Raman study that identifies such a mode in a standard thermoelectric material, Bi 2 Te 2 Se. One of the modes observed, whose origin has been debated for decades, was shown most likely to be an antisite defect induced local mode. The anomalous temperature independent broadening of the local mode is ascribed to the random arrangement of Se atoms. The temperature renormalization of all modes is well explained by an anharmonic model–Klemens's model.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-09
    Description: We demonstrate the van der Waals epitaxy of the topological insulator compound Bi 2 Te 3 on the ferromagnetic insulator Cr 2 Ge 2 Te 6 . The layers are oriented with (001)Bi 2 Te 3 ||(001)Cr 2 Ge 2 Te 6 and (110)Bi 2 Te 3 ||(100)Cr 2 Ge 2 Te 6 . Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi 2 Te 3 on Cr 2 Ge 2 Te 6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr 2 Ge 2 Te 6 . The 61 K Curie temperature of Cr 2 Ge 2 Te 6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial ferrite multilayer films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5923-5925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the structure and magnetic properties of high quality single crystalline (Mn,Zn)Fe2O4, NiFe2O4, and CoFe2O4 films. Although (Mn,Zn)Fe2O4 and NiFe2O4 films grown directly on SrTiO3 and MgAl2O4 show mediocre structural and magnetic properties, these same films grown on SrTiO3 and MgAl2O4 buffered with CoCr2O4 or NiMn2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the underlying layer. X ray, Rutherford backscattering spectroscopy, atomic force microscopy, and transmission electron microscopy analysis provide a consistent picture of the structural properties of these ferrite films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361844
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  • 5
    Electronic Resource
    Electronic Resource
    Transparent conducting thin films of GaInO3 (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInO3 is recently identified transparent conducting material which is structurally and chemically distinct from indium tin oxide [R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall, and D. H. Rapkine, Appl. Phys. Lett. 64, 2071 (1994)]. We have used both dc reactive sputtering in the on- and off-axis geometries and pulsed laser deposition to grow films of this material. Layers of pure GaInO3 as well as those partially substituted with Ge for Ga or Sn for In have been studied. Both growth techniques are capable of producing films with conductivity ∼400 (Ω cm)−1 and transmission as high as 90% throughout the visible spectrum for ∼1-μm-thick films. The growth techniques differ in the morphology of the films produced as well as in the degree of dopant incorporation that can be achieved. A post-growth anneal in H2 can help produce an optimized oxygen content and a reduction of resistivity. Hall measurements indicate a carrier concentration up to 4×1020 cm−3 for all films and a Hall mobility up to 10 cm2/(V s). Doping appears to be due both to oxygen vacancies and aliovalent ion substitution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113052
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  • 6
    Electronic Resource
    Electronic Resource
    Pyrochlore based oxides with high dielectric constant and low temperature coefficient (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7231-7233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependent dielectric constants in the vicinity of room temperature have been measured for bulk ceramics which are phase-mixtures of Pb2(Nb,Mg,Ti)2O6+x pyrochlores and Pb(Nb,Mg,Ti)O3 perovskites. A band of compositions is found in which the negative temperature coefficient of dielectric constant for the pyrochlore is very closely compensated by the positive temperature coefficient of dielectric constant of the perovskite. These compositions have dielectric constants near 200, with measured Q's near 200 at 100 kHz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360434
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  • 7
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in layered magnetic compounds (invited) (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5332-5332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some stable compounds form in layered structures, in which magnetically ordered planes alternate with planes that are essentially nonmagnetic or disordered. SmMn2Ge2, for example, consists of planes of ferromagnetically aligned Mn2 separated by a SmGe2 structure (with the Sm moments disordered). Between 90 and 150 K, alternate Mn2 planes align antiferromagnetically, but can be rotated into overall ferromagnetic alignment by a moderate field (2–15 kOe). This is a classic metamagnetic behavior. A first-order structural phase transition accompanies the magnetic transition; it consists of a dilation of the c-axis lattice parameter and contraction of the a-axis lattice parameter with no discernable change in crystal symmetry. We have found that a 4%–8% change in the resistivity is associated with the magnetic transition, which may be related to band-structure effects as well as the elimination of the interlayer magnetic scattering channel. Since these are well-annealed, equilibrium compounds, they allow the study of this scattering channel in the limit of zero layer roughness (unlike thin film multilayers). The use of arc-grown single crystals allows us to measure the anisotropic response of the compounds: for example, the resistivity anisotropy of SmMn2 Ge2 is ρc/ρa∼25, and the AFM-FM transition is found to decrease ρc while it increases ρa. The study of this and similar layered structures serves as a complement to the study of artificial thin film magnetic multilayers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353769
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  • 8
    Electronic Resource
    Electronic Resource
    Dielectric properties of Ta2O5–SiO2 polycrystalline ceramics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2346-2348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of (Ta2O5)1−x(SiO2)x polycrystalline ceramics for 0.0≤x≤0.20 are reported. Measurements were made at 1 MHz and temperature between −40 and +100 °C. The dielectric properties are not very sensitive to SiO2 content. A moderate enhancement of the dielectric constant is found, from −30 for pure Ta2O5 to ∼45 at x(approximately-equal-to)0.10. The temperature coefficient of dielectric constant in the vicinity of room temperature decreases from ∼200 ppm/°C for Ta2O5 to ∼75 ppm/°C for x=0.14. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363068
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial thin films and heterostructures of a copper-oxide-based isotropic metallic oxide (La8−xSrxCu8O20) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5449-5451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of a copper-oxide-based isotropic metallic oxide (La8−xSrxCu8O20) and superconducting heterostructures (YBa2Cu3O7/La8−xSrxCu8O20/YBa2Cu3O7) have been fabricated by 90° off-axis sputtering. La8−xSrxCu8O20 is an oxygen-deficient pseudocubic perovskite that exhibits Pauli paramagnetism. X-ray diffraction and cross-sectional transmission electron microscopy reveal the heterostructures to have high crystalline quality and clean interfaces. This material will facilitate fabrication of ideal superconductor–normal-metal–superconductor Josephson junctions with low boundary resistance due to its excellent chemical compatibility and lattice match with cuprate superconductors and will be useful for determining the source of interface resistance in such heterostructures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359240
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  • 10
    Electronic Resource
    Electronic Resource
    Easy-axis transition in SmMn2Ge2 (abstract) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6603-6603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SmMn2Ge2 is a layered ferromagnet with unusual magnetic and electrical properties. In some regards it is a natural analog to artifically layered thin film materials, and its study can provide valuable insights. SmMn2Ge2 is ferromagnetic from 0 to 90 K, with easy axes parallel to the (110) directions (FM1 state). Between 90 and 150 K it is antiferromagnetic, and from 150 K to Tc (340 K) it is again ferromagnetic, with an easy axis parallel to the (001) direction (FM2 state). We have used a continuous recording torque magnetometer to monitor the energy surface of SmMn2Ge2 as a function of temperature. We have found that the moments are parallel to (110) in the AFM state, and that the anisotropy constant varies continuously, i.e., that K→0 at the easy-axis transition, which is found to be at essentially the same temperature as the zero-field AFM/FM2 transition. The FM1/AFM and AFM/FM2 transition temperatures can be varied over a wide range by substitution on the various sites. Substitution of Y or Gd on the Sm site increases TAFM/FM2 strongly, and is found to increase the temperature of the easy axis transition, but not by precisely the same factor. Substitution of a small amount of Cr on the Mn site decreases TAFM/FM2 but appears to have no effect on the easy-axis transition. M-H curves and M-T curves taken in a vibrating sample magnetometer and in a SQUID magnetometer provide corroborating evidence for these conclusions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356910
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