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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1891-1897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conductivity measurements on La0.5Sr0.5MnO3 (LSM5) thin films as a function of temperature are presented. These are used to demonstrate that the electronic transport in LSM5 is well described by the Emin–Holstein adiabatic small polaron model. Measurements have also been performed on bulk samples. Even if the conductivity behaves somewhat differently in the latter case, the same polaronic model still applies. The polaron densities extracted from conductivity measurements are very similar, ranging from 7 to 8×1021 cm−3 for thin films and are 9.1×1021 cm−3 for bulk samples. These results agree quite well with the nominal polaron density for LSM5, 8.4×1021 cm−3. We have also derived important quantities for transport in LSM5. For thin films, we obtained hopping energies, WH, ranging between 73 and 99 meV and almost constant, at 34 meV, for bulk samples. By fitting conductivity measurements from 50 to 1123 K, we also find the zero point interaction constant, γ0, to be 0.35 in thin films. These conductivity results are compared with the literature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Publication Date: 2015-03-17
    Description: Electrolyte-Gated (EG) transistors, making use of electrolytes as the gating medium, are interesting for their low operation voltage. Furthermore, EG polymer transistors offer the advantage of solution processing, low cost, and mechanical flexibility. Despite the intense research activity in EG transistors, clear guidelines to correlate the properties of the materials used for the transistor channel and electrolytes with the doping effectiveness of the transistor channel are yet to be clearly established. Here, we investigate the use of room temperature ionic liquids (RTILs) based on the [TFSI] anion (namely, [EMIM][TFSI], [BMIM][TFSI], and [PYR 14 ][TFSI]), to gate transistors making use of MEH-PPV as the channel material. Morphological studies of MEH-PPV and RTIL films showed a certain degree of segregation between the two components. All the EG transistors featured clear drain-source current modulations at voltages below 1 V. Polar solvent additives as propylene carbonate were used to improve the transistor response time.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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