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  • 1
    Electronic Resource
    Electronic Resource
    Hot-atom mechanism in photodesorption of molecular oxygen from a stepped platinum (113) surface (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 10231-10238 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodesorption of oxygen admolecules was studied on a stepped Pt(113)=(s)2(111)×(001) surface with 193 nm irradiation at 110 K. Multidirectional desorptions were found to collimate at ±12–20° and ±45–49° off the surface normal and also along the surface normal in a plane along the trough. The first component is always dominant, and the weak second component only appears at higher oxygen coverages. The normally directed desorption is not significant. The translational energy of desorbing O2 peaks around 15–20° and 50°, confirming the inclined desorptions. It is proposed that these inclined components are due to the desorption induced by the impact of oxygen admolecules with hot oxygen atoms from the photodissociation of adsorbed molecular oxygen, emitted along the trough. A simple cosine distribution was found to fit the thermal desorption from oxygen admolecules and also the recombinative desorption of oxygen adatoms. The 193 nm irradiation also produces additional, less tightly bound oxygen adatoms, which yield a desorption component collimated at 15° from the surface normal in the step-down direction. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476483
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 719-721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intersubband light absorption measurements have been performed on a series of GaAs/AlAs quantum wells with heavy delta doping of Si atoms in the range 9.0×1011–6.5×1012 cm−2. The increase of intersubband transition energy by as much as 38 meV has been observed, and attributed to the deepening of the V-shaped potential by the Si layer and to the depolarization effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120856
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  • 3
    Electronic Resource
    Electronic Resource
    Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2122-2124 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122398
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  • 4
    Electronic Resource
    Electronic Resource
    A new apparatus for in situ photoluminescence spectroscopy in a transmission electron microscope (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4866-4869 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed an in situ TEM/PL apparatus, which enables us to excite PL emissions from a microscopic area of a specimen inside a TEM. The microscopical area of 20 μm can be examined by TEM, PL, and CL methods under the same experimental conditions. The apparatus may be applied to a transmission electron microscope of side-entry type with a minor modification. The apparatus is extremely useful for microscopic characterization of structural and electronic properties in an inhomogeneous material. Utilizing the apparatus, we have examined the spatial distribution of extended defects and point-defect complexes in CVD diamond. The apparatus will be utilized to study the structural and optical properties of materials under electron irradiation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146166
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of resonant tunneling through single self-assembled InAs quantum dots using electrophotoluminescence spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4332-4336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant tunneling through single InAs quantum dots embedded in an n-GaAs/i-Al0.38Ga0.62As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. Many sharp luminescence lines which originated from single quantum dots were observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line was investigated. The peak intensity showed triangular dependence which was similar to the current–voltage characteristics of electron resonant tunneling from three dimension to zero dimension. When the bias voltage was increased, the peak energy slightly shifted to a lower energy indicating the existence of Stark effect, and the linewidth slightly increased. The higher the luminescence energy was, the broader the linewidth was. This result agrees with the calculated resonant level width. The lifetime of resonant states was estimated to be 2.4–27 ps for luminescence linewidth of 250–22 μeV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373074
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  • 6
    Electronic Resource
    Electronic Resource
    Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6436-6438 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spin-dependent scattering in ferromagnet/nonmagnet/ferromagnet (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures was studied. An increase of sheet resistance was observed when the magnetizations of the two ferromagnetic (Ga,Mn)As layers were aligned anti-parallel, which was realized by the different coercivity of the two (Ga,Mn)As layers with different compositions. This is the first demonstration of spin-dependent scattering in magnetic multilayer structures made of semiconductor-materials alone. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372730
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and properties of (Ga,Mn)As films with high Mn concentration (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7024-7026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (Ga, Mn)As films with high nominal Mn concentration (0〈x〈0.55) are grown by low temperature molecular beam epitaxy (LT-MBE), growth temperature Ts=180 °C. Reflection high energy electron diffraction patterns indicate epitaxial growth of (Ga, Mn)As for x〈0.1, whereas they show spotty patterns for x〉0.1, which turn to polycrystalline features when x〉0.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357841
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1873-1875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the magnetic and magnetotransport properties of (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconductor-based magnetic trilayer structures. We observe a weak ferromagnetic interlayer coupling between the two ferromagnetic (Ga, Mn)As layers as well as magnetoresistance effects due to spin-dependent scattering and to spin-dependent tunneling. Both the coupling strength and the magnetoresistance ratio decrease with the increase of temperature and/or the increase of Al composition of the nonmagnetic (Al, Ga)As layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310626
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  • 9
    Electronic Resource
    Electronic Resource
    Silicon nanowhiskers grown on a hydrogen-terminated silicon {111} surface (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3700-3702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a hydrogen-terminated Si {111} surface as a substrate, we have grown Si nanowhiskers along the 〈112〉 direction by the vapor–liquid–solid mechanism. The minimum silicon core diameter was 3 nm and the maximum length was about 2 μm. The minimum silicon core diameter is close to the critical value for visible light emission due to the quantum confinement effect. In contrast to an oxidized Si surface, the hydrogen-terminated surface facilitates the formation of small molten Au–Si catalysts at a lower temperature (500 °C) which is slightly above the eutectic temperature. The formation of catalysts and the subsequent growth at the low temperature yield thin Si nanowhiskers on a Si substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122868
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  • 10
    Electronic Resource
    Electronic Resource
    Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current–voltage characteristics of AlAs/GaAs/AlAs double barrier resonant tunneling diodes with ferromagnetic p-type (Ga, Mn)As on one side and p-type GaAs on the other have been studied. A series of resonant peaks have been observed in both polarities, i.e., injecting holes from p-type GaAs and from (Ga, Mn)As. When holes are injected from the (Ga, Mn)As side, spontaneous resonant peak splitting has been observed below the ferromagnetic transition temperature of (Ga, Mn)As without magnetic field. The temperature dependence of the splitting is explained by the the spontaneous spin splitting in the valence band of ferromagnetic (Ga, Mn)As. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121835
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