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  • 1
    Electronic Resource
    Electronic Resource
    Synchrotron radiation micro-Fourier transform infrared spectroscopy applied to photoresist imaging (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The application of a micro-Fourier transform infrared, (μ-FTIR), spectroscopic system, using synchrotron radiation as a light source, for photoresist chemical analysis has been investigated. The better signal to noise due to the high brightness of the infrared radiation from the synchrotron permits higher spatial resolution scans than with a conventional glowbar. This permits a new technique of μ-FTIR spectroscopy, which potentially can get close to diffraction limited resolution, with high chemical sensitivity, for mid-IR wavelengths ranging from 2.3 μm (4400 cm−1) to 9 μm (1100 cm−1). An example of application of imaging the local chemistry changes of a chemically amplified photoresist with post-exposure bake shows the exciting capability of this technique for nondestructive resist exposure process control. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119665
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  • 2
    Electronic Resource
    Electronic Resource
    Scanning force microscopy measurements of latent image topography in chemically amplified resists (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 717-719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncontact scanning force microscopy topography measurements of exposed and undeveloped photoresists are reported. A negative chemically amplified photoresist, SAL605, was patterned by electron beam direct writing of 1 μm line linear gratings, and 5 mm pads. A relief image of exposed unbaked resist has been observed of the order of a few A(ring), and then monitored as a function of time after exposure. This relief image undergoes a topography transformation with postexposure bake (PEB), yielding a ridge located at the exposed–unexposed region interface, extending several nanometers in vertical and about one micrometer laterally. The effect has been investigated as a function of PEB time and exposure dose. Correlations of the observed phenomena with optical film thickness monitoring techniques and previously reported data on the photoresist chemical changes during exposure and PEB are discussed. Two independent mechanisms contributing to the image formation are identified. The data show that the local chemistry of the latent image at the edges of feature is different than in wider features. This has important implications for the application of chemically amplified resists to high-resolution lithography. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116602
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