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  • 1
    Electronic Resource
    Electronic Resource
    Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N2O ambient (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1464-1467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics of ultrathin SiO2 films on silicon in a nitrous oxide (N2O) ambient have been investigated as a function of oxidation temperature and time. The results show that the overall growth follows the linear-parabolic law proposed by Deal and Grove [J. Appl. Phys. 36, 3770 (1965)]. The data analysis indicates that although the oxidation proceeds by surface-limited reaction in the initial stage, it rapidly changes into a diffusion-controlled reaction. This behavior is evidenced from the fact that the reaction of the N2O molecule with the silicon surface produces an interfacial nitrogen-rich layer which acts as a barrier to the oxidant passing through the SiO2/Si interface. From the Arrhenius equation for N2O oxidation, the activation energies for the linear rate constant B/A and for the parabolic rate constant B are determined to be 1.5 and 2.3 eV, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360985
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  • 2
    Electronic Resource
    Electronic Resource
    Physical and electrical properties of Ge-implanted SiO2 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3524-3528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor structures with a Ge nanocrystal embedded in SiO2 films were fabricated by Ge+ ion implantation and subsequent high-temperature annealing. The Raman spectra indicate the evidence of self-assembled Ge nanocrystals in the SiO2 films. The Ge size and its density were estimated to 3–5 nm and 1×1012/cm2, respectively. Photoluminescence spectra showed a strong blue–violet band around 400 nm and a weak near-infrared band around 750 nm, respectively. The several implantation-induced deficient centers are believed to be responsible for the blue-light luminescence. Capacitance–voltage characteristics exhibit the flatband voltage shifts of 1.02 V after the electron injection into the SiO2/Ge/SiO2 potential well. An anomalous leakage current was clearly observed in the current–voltage characteristics. The precise simulation of quantum electron transport in the SiO2 film indicates that the anomalous conduction is originated from resonant tunneling in the SiO2/Ge/SiO2 double-well band structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1399024
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropy in transport critical current density of a Bi-Sr-Ca-Cu-oxide single crystal (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 547-549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Critical current densities and upper critical fields were measured for a single crystal of the high Tc oxide superconductor, Bi2Sr2CaCu2O8+d, by transport within the ab basal plane and along the c axis. The anisotropy in critical current densities was observed to be Jc⊥/Jc(parallel)=10, in agreement with the anisotropy in resistivity for the normal state. The scaling of the critical current density with the magnetic field was found. The critical current density scaled to zero at fields Bc2 in the ab plane and along the c axis which were in good agreement with the upper critical fields measured by transport.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345243
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  • 4
    Electronic Resource
    Electronic Resource
    Landau level formation in semiconductor quantum dots in a high magnetic field (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2316-2318 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Landau level formations have been observed in the photoluminescence spectra of highly optically populated InP strained self-organized quantum dots in between barriers of In0.5Ga0.5P at a high magnetic field. The results clearly show the evolution of the discrete states caused by 3D confinement at 0 T into Landau level-like structures at 40.9 T. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120070
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