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  • 1
    Electronic Resource
    Electronic Resource
    Laser-based ultrasound detection using photorefractive quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1041-1043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a laser-based adaptive ultrasonic homodyne receiver using dynamic holography in AlGaAs/GaAs photorefractive multiple quantum wells. The dynamic hologram acts as an adaptive beamsplitter that compensates wavefront distortions in the presence of speckle and requires no path-length stabilization. The photorefractive quantum wells have the unique ability to achieve maximum linear homodyne detection regardless of the value of the photorefractive phase shift by tuning the excitonic spectral phase. We achieve a root mean square noise-equivalent surface displacement of 6.7×10−7 Å(W/Hz)1/2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122078
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of size effects in aluminum and silicon clusters (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 2584-2590 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Semiempirical molecular orbital calculations by the SINDO1 method are used as the basis for a comparative study of medium size Aln and Sin clusters (n=13,14,19,23,35,43). Particular emphasis is placed on the differences between metallic and semiconductor properties in dependence on cluster size. Optimized structures of crystalline and noncrystalline forms are compared with respect to average bondlengths, binding energies per atom, ionization potentials, energy gaps between highest occupied and lowest unoccupied molecular orbitals, densities of states, and charge distributions. Solid state properties begin to show up at cluster size of n=43, but more clearly for aluminum than for silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458898
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  • 3
    Electronic Resource
    Electronic Resource
    Linearly polarized probes of surface chirality (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 8296-8298 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a new nonlinear optical technique to study surface chirality. We demonstrate experimentally that the efficiency of second-harmonic generation from isotropic chiral surfaces is different for excitation with fundamental light that is +45° and −45° linearly polarized with respect to the p-polarized direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470714
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  • 4
    Electronic Resource
    Electronic Resource
    Far infrared laser magnetic resonance detection of CHD (X˜ 3A‘) (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 8706-8712 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Far infrared laser magnetic resonance (FIR-LMR) spectra of the CHD radical in its X˜3A‘ electronic ground state were observed and assigned. The radicals were generated in the reaction of Na atoms with CHDBr2. LMR spectra were observed using seven laser lines at wavelengths around 100 to 200 μm. The spectra were assigned to six different rotational transitions and the molecular parameters of CHD were determined by a least squares fit. A number of additional transitions, observed using a laser line at λ=184.3 μm but not yet assigned in detail, were attributed to a coupling between the accidentally almost degenerate NKaKc=505 and 413 rotational levels induced by the εab term in the spin–rotation Hamiltonian and by the off-diagonal components of the hyperfine coupling tensor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.466726
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  • 5
    Electronic Resource
    Electronic Resource
    Perturbative analytical solutions of the magnetic forward problem for realistic volume conductors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2360-2369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic field induced by a current dipole situated in a realistic volume conductor cannot be computed exactly. Here, we derive approximate analytical solutions based on the fact that in magnetoencephalography the deviation of the volume conductor (i.e., the head) from a spherical approximation is small. We present an explicit integral form which allows to calculate the nth order Taylor expansion of the magnetic field with respect to this deviation from the corresponding solution of the electric problem of order n−1. Especially, for a first order solution of the magnetic problem only the well-known electric solution for a spherical volume conductor is needed. The evaluation of this integral by a series of spherical harmonics results in a fast algorithm for the computation of the external magnetic field which is an excellent approximation of the true field for smooth volume conductor deformations of realistic magnitude. Since the approximation of the magnetic field is exactly curl-free it is equally good for all components. We estimate the performance for a realistic magnitude of deformations by comparing the results to the exact solution for a prolate spheroid. We found a relevant improvement over corresponding solutions given by the boundary element method for superficial sources while the performance is in the same order for deep sources. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337089
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  • 6
    Electronic Resource
    Electronic Resource
    Band offsets for pseudomorphic InP/GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 259-261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress-induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100983
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  • 7
    Electronic Resource
    Electronic Resource
    Absolute pressure dependence of the second ionization level of EL2 in GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1143-1145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p-type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102544
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  • 8
    Electronic Resource
    Electronic Resource
    Arsenic cluster dynamics in doped GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3509-3513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the formation of As precipitates in doped GaAs structures that were grown by molecular beam epitaxy at low substrate temperatures and subsequently annealed. We find that the As precipitates form preferentially on the n side of such fabricated GaAs pn junctions. As the coarsening process proceeds, there is a gradual increase in the amount of As in precipitates in the n-GaAs region and a decrease in the p-GaAs region; the depletion region between the pn junction becomes free of As precipitates. These observations can be understood qualitatively based on the charge states of the As interstitial and using thermodynamic arguments in which the crystal attempts to minimize the chemical potential during the anneal. The presence of the excess As results in a stable Be profile even to anneals of 950 °C. Finally, a temperature cycling technique to grow arbitrarily thick GaAs epilayers containing As precipitates was demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352326
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  • 9
    Electronic Resource
    Electronic Resource
    Addendum: Band offsets for pseudomorphic InP/GaAs [Appl. Phys. Lett. 54, 259 (1989)] (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2277-2277 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101102
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  • 10
    Electronic Resource
    Electronic Resource
    Erratum: Linearly polarized probes of surface chirality [J. Chem. Phys. 103, 8296 (1995)] (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 5713-5713 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471824
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