ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence and p-type conductivity in CdTe:N grown by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2×1017 cm−3 have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357197
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Control of nitrogen incorporation in ZnTe:N grown by molecular-beam epitaxy using Ar dilution in a N plasma source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5214-5217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of Ar dilution in a N plasma source has been used to achieve control of both electrical and optical properties of p-type ZnTe:N grown by molecular-beam epitaxy. Photoluminescence data are presented that show the transition from "pure'' ZnTe emission to that indicative of heavily N-doped ZnTe. A new principal bound-exciton line associated with N impurities is observed at 2.3685 eV. An anomalous red shift in the corresponding donor-acceptor pair peak energy with increasing N concentration is observed at high N concentration and is attributed to the effects of N impurity banding. Trends in p-type conductivity confirmed the ability to control hole concentrations using Ar dilution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357190
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Measurement of interdiffusion in II–VI quantum-well structures using optical methods (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1895-1897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extent of interdiffusion in Cd1−xMnxTe/CdTe quantum-well structures grown by molecular-beam epitaxy was monitored by photoluminescence and photoluminescence excitation spectra. Thermal annealing of as-grown and ion-implanted structures in over pressures of cadmium (or tellurium) provide clear evidence that diffusion is controlled by cation vacancies and are consistent with a strong dependence of the interdiffusion coefficient on the vacancy concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361092
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    CdS/CdSe intrinsic Stark superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 907-915 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer superlattices of wurtzite CdS/CdSe have been grown on (111)A GaAs substrates by metalorganic chemical vapor deposition and their optical properties studied by photoluminescence spectroscopy. It is shown that the superlattice layers contain giant strain-induced piezoelectric fields exceeding 2×108 V m−1. These fields are similar to those reported for (111) orientated III–V superlattices, but an order of magnitude greater. The recombination energies from a series of samples provide evidence for a type II conduction band offset of 0.23±0.10 eV (the electron wells being in the CdS), with the band structure heavily modified by the internal electric fields. In addition, the photoluminescence peak emission energy shows a strong dependence on the excitation power. This is interpreted as further evidence for the effect of internal fields. We conclude that this system shows new effects not previously observed in II–VI compound superlattices. The large band-gap tunability and the space-charge effects offer possibilities for all-optical switching devices in the 700–1300-nm region of the spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351312
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of stage-1 CoCl2-graphite intercalation compounds under pressure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5746-5748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report ac magnetic susceptibility (χ=χ'−iχ‘) measurements of stage-1 CoCl2-graphite intercalation compounds (GICs) carried out under hydrostatic pressures of 0–15 kbar. For stage-1 CoCl2 -GICs, it is found that the three-dimensional ordering temperature Tc2=TN=9.7 K, where the ferromagnetic planes of Co2+ spins become ordered into an antiferromagnetic arrangement along the c axis, shifts to a higher temperature with increasing pressure. Additionally, the transition field Ht, measured when a magnetic field is applied in the x-y plane, shifts to a higher field value with increasing pressure. From the increase of the transition field, we can estimate the pressure dependence of the antiferromagnetic interlayer coupling J'.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345950
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Excimer laser induced diffusion in magnetic semiconductor quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1373-1379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of pulsed laser annealing (PLA) of CdTe/CdMnTe quantum well structures are made in order to examine depth dependent effects in laser irradiated semiconductors. Since diffusion coefficients are strongly dependent on the temperature, depth resolution is achieved because the diffusion of Mn from the barriers into the quantum wells is depth dependent. Multiple quantum well (MQW) structures of CdTe/CdMnTe were annealed with single pulses from an XeCl laser at 308 nm. At a threshold of 90 mJ cm−2 two new emission bands are observed that are attributed to the diffusion of Mn from barrier layers to QWs. The diffusion associated with these bands, measured as the integrated product of the diffusion constant and time, is found to be 300 and 30 Å2. Calculations of the temperature, reached within the surface following PLA, using an analytical solution of the heat diffusion equation coupled with known high temperature diffusion coefficients predict the diffusion to decrease by one order of magnitude within one period at the top of the MQW stack. It is suggested that at the threshold surface melting occurs and that these emission bands arise from the QWs immediately beneath the melt front. The diffusion of Mn ions into the QWs is confirmed by magneto-optical data. A further emission band occurs at this same threshold with a Mn concentration above that of the concentration in the barrier layers of the MQW stack. This emission is attributed tentatively to the segregation of the Mn ion within the molten region following recrystallization. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373826
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Independent contacts to a double-electron gas using mesoscopic surface gates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4036-4038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate how two two-dimensional electron gases can be independently contacted using only surface gates defined by electron-beam lithography: macroscopic bar gates to contact the lower layer, and mesoscopic split gates to contact the upper layer. When the technique is applied to a sample consisting of two 150 Å GaAs wells separated by 300 Å Al0.33Ga0.67As barrier, there is more than 30 MΩ isolation at 5 K for interlayer voltages up to ±30 mV; the interlayer isolation operates up to 30 K. The independent contacts are used for a preliminary investigation of two parallel one-dimensional quantum wires. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372451
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Evidence for 2D XY Kosterlitz-Thouless transitions in magnetic graphite intercalation compounds (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4398-4400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic graphite intercalation compounds (GIC's) allow a controlled separation of atomically abrupt magnetic layers by variation of the stage of the sample. Thus very small J'/J values (∼10−4) and quasi-two-dimensional behavior can be achieved where J' and J are, respectively, the interplanar and intraplanar exchange constants. The applicability of a 2D XY model is established by a comparison of the high-temperature susceptibility with the high-temperature series expansions for the various 2D and 3D models. Low-temperature studies provide values for magnetic interactions pertinent to the most interesting intermediate temperature range, where a 2D XY bound vortex phase may occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338437
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Pulsed-laser deposition for organic electroluminescent device applications (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2553-2555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An anthracene-based compound has been synthesized and used in the preparation of organic light-emitting diode devices by pulsed-laser deposition. Spectrally resolved electroluminescence has been observed and combined with current–voltage measurements in an investigation of the electro-optical dependence on laser fluence and device conditioning history. The device performance has been assessed and the charge-transfer process characterized. A space-charge-limited conduction regime with an exponential distribution of traps is proposed for the elevated electric fields sufficient to produce electroluminescence. The suitability of the pulsed-laser deposition technique is evaluated for this application. Evidence for molecular degradation associated with deviation from optimum deposition parameters is provided by Fourier transform infrared spectroscopy and scanning electron microscopy observations, comparing pulsed-laser deposition with established spin-coating and physical-vapor deposition techniques. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126405
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    On the lack of influence of disorder in Cr3+-doped LiSr0.8Ca0.2AlF6 (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2232-2234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and electron spin resonance spectroscopies have been used to investigate the thermal stability of lasers based on Cr3+:LiSr0.8Ca0.2AlF6, a material in which the onset of critically inhibiting nonradiative decay at temperatures below 300 K might be expected based on results from other Cr3+-activated disordered gain media. The influence of disorder on the Cr3+ environment is shown to be very small in LiSr0.8Ca0.2AlF6 so that the 4T2→4A2 fluorescence transition is not broadened relative to that in LiSrAlF6 and the onset of significant nonradiative decay is also held above room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121330
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...