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  • 1
    Electronic Resource
    Electronic Resource
    Re-establishment of photoluminescence in Cu quenched porous silicon by acid treatment (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4130-4132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: HCl, H3PO4, and H2SO4 baths have been used to re-establish the photoluminescence of porous Si whose initial luminescence had been quenched by immersion in CuCl2. HCl had the fastest effect, with luminescence beginning to reappear after typically a few minutes, while the other acids required typically one to two days for dim luminescence to start reappearing. Auger electron spectroscopy (AES) depth profiling showed that after quenching, the Cu profile typically penetrated 2000 to 3000 A(ring) into the porous Si and that the O concentration was greatly enhanced in this region. After re-establishment of the luminescence by acid treatment, the AES depth profiles showed no Cu, but still had an enhanced O region of similar size and concentration. Photoluminescence emission spectra taken in situ during acid treatment with HCl showed a redshift of about 8% in the peak wavelength as the intensity increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359559
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy and secondary ion mass spectrometry of luminescent, nonluminescent, and metal quenched porous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2423-2428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon with varying optical properties (luminescent, nonluminescent, and metal quenched) is investigated by transmission infrared (IR) spectroscopy and secondary ion mass spectrometry (SIMS). SIMS and transmission IR data are presented which show a lack of correlation between the optical properties of similarly prepared luminescent and nonluminescent porous silicon samples and the concentrations of the chemical elements and bonds detected therein. Similar results are obtained for a comparison of IR spectra before and after dissolving the topmost layers (∼2000 A(ring)) of a luminescent sample in a KOH solution, exposing the nonluminescent porous material below. Finally, IR and SIMS results for luminescent porous silicon quenched by metal ion solutions show a large increase in oxygen after quenching, but it is argued that the increased oxygen is unlikely to be directly responsible for the quenching of luminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357591
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  • 3
    Electronic Resource
    Electronic Resource
    Red to green rainbow photoluminescence from unoxidized silicon nanocrystallites (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3929-3931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared luminescent silicon by incorporating H2O2 in the anodizing process. Under UV excitation, our samples appear reddish, orangish, yellowish to greenish as the electrolyte-air interface at the meniscus is approached. Under high current anodization, the emission becomes broad but unstable. The time characteristics of all the emission regions are in the range of 1–10 μs. The results are consistent with a significant reduction of crystallite sizes, and may be explained via novel Si–Si dimer surface states that are induced by quantum confinement. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367313
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  • 4
    Electronic Resource
    Electronic Resource
    Surface waves in closed basins under principal and autoparametric resonances (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1635-1648 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The method of multiple scales is used to analyze the nonlinear response of the surface of a liquid in a cylindrical container to a principal parametric resonant excitation in the presence of a two-to-one internal (autoparametric) resonance. Four autonomous first-order ordinary-differential equations are derived for the modulation of the amplitudes and phases of the two modes involved in the internal resonance when the higher mode is being excited by a principal parametric resonance. The modulation equations are used to determine the periodic oscillations and their stability. The force-response curves exhibit the jump and saturation phenomena as well as a Hopf bifurcation, whereas the frequency-response curves exhibit the jump phenomenon and supercritical and subcritical Hopf bifurcations. Limit-cycle solutions of the modulation equations are found between the Hopf frequencies; they correspond to aperiodic motions of the liquid surface. All limit cycles deform and lose stability by either pitchfork or cyclic-fold bifurcations as the excitation frequency or amplitude is varied. The pitchfork bifurcation breaks the symmetry of the limit cycles whereas the cyclic-fold bifurcation causes cyclic jumps, which may result in a transition to chaos. Period-three motions are found in a very narrow range of the excitation frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.857571
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  • 5
    Electronic Resource
    Electronic Resource
    Revival of interband crystalline reflectance from nanocrystallites in porous silicon by immersion plating (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3483-3485 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We prepared porous silicon for which the UV reflectance (3.3–6 eV) is nearly eliminated, and exhibits no features at the Si interband bulk transitions 3.3, 4.3, and 5.5 eV. Plating with a thin layer of copper is found to cause recovery of the UV bulk-like crystalline reflectance and interband resonances. This provides evidence that the loss of crystalline absorption is reversible and is not due to a permanent loss in the crystalline structure. This may relate to a recent model in which the optical activity of ultra small nanocrystallites is produced by a new Si–Si crystalline configuration (or phase), distinct from but interconnected to the diamond-like configuration by a potential barrier. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124135
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  • 6
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    Theoretical efficiency limit for a two-terminal multi-junction “step-cell” using detailed balance method (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-02-20
    Description: Here we present detailed balance efficiency limit for a novel two-terminal dual and triple junction “step-cell” under AM 1.5G and AM 0 incident spectrums. The step-cell is a multi-junction (MJ) solar cell in which part of the top cell is removed, exposing some of the bottom cell area to unfiltered incident light, thus increasing bottom cell's photogenerated current. Optical generation of the bottom cell is modeled in two parts: step part, limited by the bottom cell bandgap, and conventional part, additionally limited by the top cell absorption. Our results show that conventionally designed MJ cell with optimized bandgap combination of 1.64 eV/0.96 eV for dual junction and 1.91 eV/1.37 eV/0.93 eV for triple junction has the highest theoretical efficiency limit. However, the step-cell design provides significant efficiency improvement for cells with non-optimum bandgap values. For example, for 1.41 eV ( ∼GaAs)/Si dual junction under AM 1.5G, efficiency limit increases from ∼21% in a conventional design to 38.7% for optimized step-cell. Similar benefits are observed for three-junction step-cell and for AM 0 spectrum studied here. Step-cell relaxes bandgap requirements for efficient MJ solar cells, providing an opportunity for a wider selection of materials and cost reduction.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 7
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    Enhanced memory effect via quantum confinement in 16 nm InN nanoparticles embedded in ZnO charge trapping layer (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-26
    Description: In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al 2 O 3 layers are used as tunnel and blocking oxides. The gate contacts are sputtered using a shadow mask which eliminates the need for any lithography steps. High frequency C-V gate measurements show that a memory effect is observed, due to the charging of the InN-NPs. With a low operating voltage of 4 V, the memory shows a noticeable threshold voltage (V t ) shift of 2 V, which indicates that InN-NPs act as charge trapping centers. Without InN-NPs, the observed memory hysteresis is negligible. At higher programming voltages of 10 V, a memory window of 5 V is achieved and the V t shift direction indicates that electrons tunnel from channel to charge storage layer.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of ultrathin oxides on luminescent silicon nanocrystallites (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 841-843 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ultrathin oxides on nanocrystallites of luminescent porous silicon is studied using infrared, optical, and Auger spectroscopy. Room-temperature oxidation is performed using H2O2 immersion and UV ozone interactions, producing oxides of ∼5 and ∼10 Å, respectively. The H2O2 oxidized sample is optically active, while the ozone oxidized sample is not active. UV–ozone produces a transverse optical Si–O–Si mode blueshifted by ∼90 cm−1 from bulk oxide, which H2O2 does not produce. Auger Si LVV spectra show an oxidelike signal for UV/ozone samples and a Si-like signal for H2O2 samples. We discuss this in terms of different oxidation behaviors that either preserve or break Si–Si dimers that may be responsible for the optical behavior. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122019
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  • 9
    Electronic Resource
    Electronic Resource
    Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1141-1143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate into the porous layer correlates with the degree of quenching of the photoluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the sample toward the bulk.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110832
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  • 10
    Electronic Resource
    Electronic Resource
    Quenching of porous silicon photoluminescence by deposition of metal adsorbates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4783-4785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various metals were deposited on luminescent porous silicon (PS) by immersion in metal ion solutions and by evaporation. The photoluminescence (PL) was quenched upon immersion in ionic solutions of Cu, Ag, and Au but not noticeably quenched in other ionic solutions. Evaporation of 100 A(ring) of Cu or 110 A(ring) of Au was not observed to quench PL. Auger electron spectroscopy performed on samples quenched and then immediately removed from solution showed a metallic concentration in the PS layer of order 10 at.%, but persisting to a depth of order 3000 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354350
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