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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 414-418 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra, photoluminescence (PL), Stokes shift, and electroluminescence (EL) in poly(disilanyleneoligothienylene)s have been found to be dependent on the length of oligothienylene units. The color of EL changes from green to red with increasing length of oligothienylene from three to seven thiophene rings. Their stability is much higher than polysilanylene and increases with increasing length of oligothienylene and by C60 doping. Photoconductivity is strongly enhanced and PL is remarkably quenched upon C60 doping, which were discussed by the photo-induced electron transfer between aromatic units in these polymers and C60. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2971-2973 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new high-permeability, grain-oriented 3% silicon steel sheet of 7-mil or 0.18-mm gauge was developed by solving such problems as increasing difficulty in secondary recrystallization with decreasing sheet thickness. Typical magnetic properties of the sheet are an induction (B10) of 1.93 T at a magnetizing force of 1000 A/M and a core loss (W13/60) of 0.245 W/lb at a frequency of 60 Hz and at an induction of 1.3 T. The core loss can be reduced further to 0.220 W/lb if the sheet is treated by an artificial permanent domain control technique. When the price and other properties are also taken into account, this very low core loss seems to favor the 7-mil silicon steel sheet over amorphous metals.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1362-1364 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in undoped and weakly Mg-doped n-type GaN films fabricated by metalorganic chemical vapor deposition were examined with deep level transient spectroscopy. Deep levels measured at 0.26 and 0.62 eV below the conduction band were found in relatively low concentrations of ∼2×1013 cm−3 in undoped GaN. Addition of small quantities of the Mg acceptor species by means of bis-cyclopentadienyl magnesium (Cp2Mg) during growth corresponded to a significant increase in the concentration of the level at 0.62 eV. The concentration of the shallower level, found to be independent of the Cp2Mg addition, remained unchanged. These deep levels may detrimentally affect optical and electrical properties when fabricating p-type GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2014-10-08
    Description: We report an approach using metallic glass microwires for functional organization of kinesin/microtubule-based molecular motility systems along a quasi-one-dimensional track. The molecular motility system assembled along a metallic glass microwire exhibits the typical kinesin-powered gliding motion of microtubules, while the variance of the gliding direction depends on the wire diameter. As a result of the geometrical boundary condition given by the wire tracks, the angle within which the orientations of gliding microtubules fall becomes narrower for smaller wire diameter. Such behavior supports the feasibility of using microwires as a simple and flexible means of spatial regulation of the molecule-based in-vitro motion. Furthermore, the metallic glass wires interact with microtubules, the negatively charged polyelectrolyte, by creating electric fields. We experimentally demonstrate how the electric field-induced forces act as an additional control parameter in the wire-based manipulation of the molecular motility system.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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