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  • American Institute of Physics (AIP)  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Room-temperature stimulated emission of optically pumped GaAs/AlAs quantum wires grown on (311)A-oriented substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3443-3445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emission of optically pumped GaAs/AlAs quantum wires directly grown on (311)A-oriented GaAs substrates has been observed at 77 K and room temperature. A significant reduction of the threshold excitation energy density for stimulated emission at room temperature could be measured in comparison to a two-dimensional reference sample as well as a reduction of the temperature sensitivity of the threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111236
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  • 2
    Electronic Resource
    Electronic Resource
    Periodic mesoscopic step arrays by step bunching on high-index GaAs surfaces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 431-435 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct formation of mesoscopic surface corrugations on high-index GaAs substrates during growth by molecular-beam epitaxy is reported. The accumulation of microscopic steps on GaAs (210) to produce one-dimensional step arrays with a 230 A(ring) lateral periodicity is followed by reflection high-energy electron diffraction. The surprisingly high uniformity of the resulting mesoscopic step array is directly confirmed by atomic force microscopy. The shape of the steps is imaged by high-resolution transmission electron microscopy. Being comparable to the exciton Bohr radius in GaAs this length scale of the lateral periodicity is of particular importance for modulating the electronic properties of GaAs-based heterostructures. Pronounced red shifts in the luminescence of undoped GaAs/AlAs multilayer structures and an enhanced intensity at room temperature are observed. n-type modulation-doped heterostructures exhibit an anisotropic conductivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354128
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  • 3
    Electronic Resource
    Electronic Resource
    Polarization anisotropy in quasiplanar sidewall quantum wires on patterned GaAs (311)A substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8228-8234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization anisotropy of the photoluminescence from quasiplanar quantum wires fabricated on the sidewall of [01¯1]-oriented mesas on the (311)A GaAs surface is investigated using a modulation technique that combines high spatial (∼1 μm) and polarization resolution (〈0.1%). Due to their low symmetry, (311)A-oriented quantum wells are intrinsically anisotropic with the fundamental transition preferentially oriented along the [2¯33] direction. The anisotropy contribution from the lateral confinement in the [01¯1] wires opposes that from the vertical confinement. With increasing lateral confinement, the wire anisotropy initially reduces and then changes its sign. The lateral extent of the electronic wave functions involved in the anisotropic transitions is obtained from a comparison of the results with a theoretical model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370663
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  • 4
    Electronic Resource
    Electronic Resource
    Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3538-3540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of the growth front during molecular-beam epitaxy on patterned GaAs (311)A substrates is investigated by cross-sectional atomic force microscopy. The growth rate on the sidewalls is enhanced due to the preferential atom migration from the mesa top and bottom to the sidewalls. The growth front evolution is terminated by the formation of a stable, corrugated surface which is composed of (311)A terraces and steps toward the [23¯3¯] and [2¯33] directions. Modulation of island density in strained-layer growth is demonstrated by growing 4 ML InAs on this nonplanar surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328372
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  • 5
    Electronic Resource
    Electronic Resource
    Confined phonons in GaAs/AlAs superlattices with periodically corrugated interfaces (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2537-2539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using resonant Raman spectroscopy we have studied novel GaAs/AlAs superlattice (SL) structures, grown on (113) substrates, where the GaAs and AlAs layer widths vary periodically on a nanometer scale along the lateral [11¯0] direction. We observe sharp confined LO phonon lines for both (113) and simultaneously grown (001) SLs, for a range of different layer widths, whose frequencies map the bulk GaAs LO dispersion. The confined phonon lines of the (113) SLs show a side peak, which can be assigned to a mode with finite k vector parallel to the layers, induced by the lateral periodicity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106905
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  • 6
    Electronic Resource
    Electronic Resource
    Size quantization by faceting in (110)-oriented GaAs/AlAs heterostructures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1615-1617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On GaAs (110) substrates a distinct step structure exists on the surface during molecular beam epitaxy of GaAs/AlAs multilayer structures which is monitored in situ by reflection high-energy electron diffraction. This peculiar surface structure results in thicker GaAs (AlAs) channels associated with the step planes giving rise to pronounced redshifts of the luminescence. The observation of hot exciton luminescence indicates increased exciton stability and exciton phonon interaction due to strong lateral localization of the excitons in the GaAs channels. The measured optical anisotropy is in agreement with the lateral potential introduced by the faceting of the GaAs/AlAs interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107218
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  • 7
    Electronic Resource
    Electronic Resource
    Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 627-629 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 °C) have been investigated in the time domain by electro-optic sampling. It could be shown that these diodes have a faster response, a considerably reduced long time tail, and can be used at larger bias than comparable diodes produced on GaAs grown at 700 °C. Temperature-dependent measurements show that the tail can be described by hopping conductivity and disappears below 50 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106574
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