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  • 1
    Electronic Resource
    Electronic Resource
    Layer-by-layer growth of GaN induced by silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1626-1628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ x-ray scattering studies of surface morphology evolution during metal–organic chemical vapor deposition of GaN. Dosing the GaN(0001) surface with Si is shown to change the growth mode from step-flow to layer-by-layer over a wide temperature range. Annealing of highly doped layers causes Si to segregate to the surface, which also induces layer-by-layer growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1309023
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  • 2
    Electronic Resource
    Electronic Resource
    In situ x-ray scattering study of PbTiO3 chemical-vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1809-1811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in situ surface x-ray scattering measurements of PbTiO3 epitaxy by metal–organic chemical-vapor deposition. Oscillations in crystal truncation rod intensity corresponding to layer-by-layer growth are observed under a variety of growth conditions. At lower PbO overpressures, we observe a transition to step-flow growth and an increased rate of recovery after growth, indicating a higher surface mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458530
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent electron diffraction and microscopy studies of GaN nucleation layers have shown that faults in the stacking of the close-packed planes result in the coexistence of cubic and hexagonal phases within the layers. Using grazing incidence x-ray scattering, we have quantified the proportion of the cubic and hexagonal phases throughout the nucleation layer. We compare the structure of a 20 nm nucleation layer grown on sapphire by atmospheric pressure metal-organic chemical vapor deposition at 525 °C to that of an identical layer heated to 1060 °C. The fractions of cubic and hexagonal phases in the layers are determined by a comparison of the scattering data with a Hendricks–Teller model. High temperature exposure results in a decrease of the cubic fraction from 0.56 to 0.17. The good agreement with the Hendricks–Teller model indicates that the positions of the stacking faults are uncorrelated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121511
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  • 4
    Electronic Resource
    Electronic Resource
    A comparison of surface roughness as measured by atomic force microscopy and x-ray scattering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2944-2953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare measurements of the roughness of silicon(001) wafers cleaned by several methods. The roughness values were obtained using crystal truncation rod (CTR) scattering and atomic force microscopy. Although they do not yield identical results, both methods show the same relative roughness for the different cleans. CTR scattering is sensitive to roughness on lateral length scales down to atomic dimensions. The quantitative differences in roughness can be explained by the different wavelength spectrum of roughness probed by the two techniques. CTR measurements were also performed after a 60 Å thermal oxide was grown on the wafers. The roughness trends are the same after oxidation, but we also find that the oxidation process has significantly reduced the interfacial roughness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366129
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  • 5
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    Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-05
    Description: Non-polar orientations of III-nitride semiconductors have attracted significant interest due to their potential application in optoelectronic devices with enhanced efficiency. Using in situ surface x-ray scattering during metal-organic vapor phase epitaxy (MOVPE) of GaN on non-polar (m-plane) and polar (c-plane) orientations of single crystal substrates, we have observed the homoepitaxial growth modes as a function of temperature and growth rate. On the m-plane surface, we observe all three growth modes (step-flow, layer-by-layer, and three-dimensional) as conditions are varied. In contrast, the +c-plane surface exhibits a direct crossover between step-flow and 3D growth, with no layer-by-layer regime. The apparent activation energy of 2.8 ± 0.2 eV observed for the growth rate at the layer-by-layer to step-flow boundary on the m-plane surface is consistent with those observed for MOVPE growth of other III-V compounds, indicating a large critical nucleus size for islands.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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