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  • 1
    Electronic Resource
    Electronic Resource
    Influence of growth and microstructure of electrodeposited cadmium telluride films on the properties of n-CdS/p-CdTe thin-film solar cells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4940-4945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film n-CdS/p-CdTe solar cells have been fabricated from electrodeposited CdS and CdTe layers. Cells made with crystalline CdTe films were 9.0%–11.5% efficiencies whereas those with CdTe of structural imperfection gave up to 6.8% efficiency. Cell efficiencies varied with growth conditions of CdTe depositions. Scanning electron micrographs and x-ray diffraction patterns showed that the CdTe deposits of relatively good cells had less grain boundaries and better crystallinity than less efficient cells. Capacitance measurements showed that the cells made with CdTe of structural imperfection had large number of interface states relative to those with crystalline CdTe films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352062
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and properties of electrodeposited indium tin oxide/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe solar cells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 782-786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cadmium telluride-based solar cells have been prepared as indium tin oxide (ITO)/SnO2/CdTe and indium tin oxide/SnO2/CdS/CdTe structures where CdS and CdTe were prepared by an electrodeposition technique. Both open circuit voltage and short circuit current of ITO/SnO2/CdTe cells were higher than that of ITO/SnO2/CdS/CdTe cells. The spectral response measurement showed that the current collection was higher in the ITO/SnO2/CdTe cell relative to the ITO/SnO2/CdS/CdTe cell. Current-voltage temperature measurements indicated that the junction transport could be controlled by recombination or thermally assisted tunneling in the ITO/SnO2/CdTe cell, whereas tunneling could be the dominant junction transport mechanism in the ITO/SnO2/CdS/CdTe cell. Activation energies of ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells were 0.60 and 0.76 eV, respectively. The values of the built-in potential, Vbi calculated from the measurement of open circuit voltage with temperature were 1.41 and 1.5 eV for ITO/SnO2/CdTe and ITO/SnO2/CdS/CdTe cells, respectively, whereas from Mott–Schottky plots they were 1.1 and 0.95 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353338
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure effects on electronic properties of Nb/Al2O3/Nb tunnel junctions (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6396-6405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results obtained from several hundred Nb/Al2O3/Nb tunnel junctions fabricated by the "whole-wafer'' process. These results indicate that one of the factors determining resistance and quality variations in such devices is the microstructure of the underlying base layer of niobium. We have further developed the technique of anodization spectroscopy to provide a quantitative measure of the variation in the thickness of the thin aluminum layers which contain the tunnel barrier and have related this to the temperature at which the niobium base layer is deposited. We show that at least two mechanisms are responsible for normal-state resistance variations in such devices and that device quality is closely related to the integrity of the aluminum layer underlying the tunnel barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342053
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  • 4
    Electronic Resource
    Electronic Resource
    Comparison of infrared upconversion methods for photon-limited imaging (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6075-6084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared upconversion offers advantages over direct detection of thermal imagery, but has been of limited use because of low upconversion efficiencies and because of the complexity of the upconversion systems. Photon-limited imaging techniques can overcome the disadvantages of upconversion. The low-power levels required by photon-counting detectors make large upconversion efficiencies unnecessary. At the same time, photon-limited imaging offers advantages in speed of operation and ease of implementation. We investigate the application of photon-limited imaging to sum-frequency upconverters, infrared quantum counters in alkali-metal vapor, and a recently reported infrared phosphor. Upconversion efficiencies and noise effects associated with the different upconversion methods are derived. Two figures of merit are used to compare the upconversion methods. One figure of merit is the conventional noise equivalent differential temperature (NEΔT). The other is a criterion based on the statistics of photon-limited images applied to scene matching. We find that the sum-frequency upconverter and the phosphor require fewer detected photons than the infrared quantum counter to achieve the same values for the figures of merit. We also find that reliable scene matching can be performed with fewer detected photons than would be expected from the NEΔT figure of merit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345167
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  • 5
    Electronic Resource
    Electronic Resource
    Direct observation of atomic planes in epitaxial multilayers by anodization spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 732-734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the technique of anodization spectroscopy we have shown that it is possible to directly observe individual atomic planes in high quality Nb/Ta epitaxial multilayers. The signal corresponding to the atomic planes is superimposed on the superlattice structure associated with the different anodization rates of the two metals. The results imply that an upper limit of less than 0.1 nm can be placed on the fundamental resolution of this novel measurement technique. As a test of this measurement we have obtained data from films grown on different orientation substrates, and have shown that the separation of the peaks corresponds to the known lattice spacings in the growth direction. The mechanisms responsible for the very uniform propagation of the anodization front and the consequent ability to observe directly the atomic planes normal to the exposed surface are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101789
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