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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence properties of nitrogen ion implanted ZnSe after thermal annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1751-1753 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen atoms were implanted into ZnSe layers which were grown by metalorganic chemical vapor deposition. The implanted crystals were thermally annealed in a nitrogen atmosphere. Photoluminescence spectra show an acceptor-bound excitonic emission line (I1) and donor-to-acceptor pair (DAP) recombination emission, which reveal the activation of nitrogen atoms as shallow acceptors. An additional DAP emission was observed at 462 nm, which is often seen for ZnSe:N grown by molecular beam epitaxy. The selenium vacancy generation accelerates the occupation of nitrogen atoms at the selenium sites and the excess vacancy generation brings about the formation of deep donor complexes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115038
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    Paper (German National Licenses)
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    Layer thickness dependence of current induced effective fields in ferromagnetic multilayers (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-26
    Description: We report the relation between current induced effective fields and ferromagnetic layer thickness. Hall measurements with rotating magnetic field show that the transverse and perpendicular effective fields have linear relations to the inverse of the magnetic moment m per area S . The results imply that both of these effective fields may originate from spin angular momentum transferring. However, the non-zero intercept of the transverse field at m / S  = 0 implies that magnetization independent effects, such as Rashba effect, may contribute to transverse field.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 3
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    Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-12-06
    Description: Practical use of Resistive Random Access Memory (ReRAM) depends on thorough understanding of the resistive switching (RS) mechanism in transition metal oxides. Although most of ReRAM samples have polycrystalline structures, both experimental studies and theoretical calculations do not often consider the effects that grain boundaries have on the RS mechanism. This paper discusses what determines resistance values in a Pt/polycrystalline NiO/Pt ReRAM structures by using both experiments and first-principles calculations. Electrical measurements suggest that the RS is caused in the grain boundaries of NiO films. First-principles calculations indicate that slight displacements of atoms with a small energy change of 0.04 eV per atom on the surfaces exposed in the grain boundaries can drastically change conductivities. We propose the tiling model, in which grain surfaces are composed by insulating and conductive micro surface structures, and the surface resistances are determined by the tiling patterns.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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