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  • 1
    Electronic Resource
    Electronic Resource
    Energy dependence of diffractive and rotationally inelastic scattering of D2 from NiAl(110) (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 2255-2263 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Diffraction and rotational transitions of D2 from NiAl(110) have been measured at incident energies between 88 and 157 meV. The measurements were done along the [11¯0] azimuth and using a set up which allows the recording of diffraction patterns at a fixed angle of incidence. Elastic first-order diffraction and rotationally inelastic diffraction peaks were observed over the whole incident energy range explored. The elastic diffraction data could be fitted using the simple Eikonal approximation only over a very narrow range of incident energies. Similarly, a Debye–Waller-type attenuation of diffraction intensities as a function of surface temperature was only verified at low incident energies (∼100 meV). The absolute 0→2 transition probability was found to increase from 10 to 20% in the energy range investigated, whereas the one corresponding to the 2→0 transition remained constant at 10%. An important conclusion of our work is that the behavior exhibited by these two transitions as a function of incident energy is independent of angle of incidence. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488592
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  • 2
    Electronic Resource
    Electronic Resource
    The Fe/Si(100) interface (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1377-1383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of iron silicides has been monitored by a variety of surface sensitive techniques such as Auger electron spectroscopy, electron energy loss spectroscopy, and low energy electron diffraction (LEED). The deposition of Fe onto Si(100) at room temperature results in layer-by-layer growth of polycrystalline Fe with some Si interdiffused into the growing film. The extent of the reaction of silicide formation is very limited at room temperature. These two observations contradict previous reports. Formation of iron silicide by solid phase epitaxy occurs at low temperature (325 °C). The first compound formed can be identified as FeSi—with an additional Si layer at the surface. At 450 °C the silicide film transforms to FeSi2, maintaining a layer of Si at the outer surface. In view of the low formation temperature and some LEED observations the disilicide is probably in the β-phase. We have determined the temperature range of stability of the FeSi2 film. Thermal treatments at temperatures around 600 °C produce the lateral disruption of the FeSi2 film. Iron disilicide can also be grown by evaporating Fe onto a Si substrate maintained at 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347276
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  • 3
    Electronic Resource
    Electronic Resource
    Helium scattering study of the growth mechanism and phase transitions of Pb overlayers on Cu(100) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1239-1241 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first results of thermal energy He scattering by an heteroepitaxial system, namely Pb on Cu(100). The intensity of the specularly reflected He beam as a function of the coverage of Pb is sensitive to disordered adsorption, to the ordering of the overlayer, and to three-dimensional cluster growth. Quantitative information, such as the number of random vacancies in the as-deposited monolayer, can be obtained. The large differences in the cross sections for diffuse scattering between Pb adatoms on the Cu terraces and on the steps have been used to determine the heat of two-dimensional vaporization of Pb atoms from step to terrace sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338126
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  • 4
    Electronic Resource
    Electronic Resource
    Reduced coercivity in ferromagnetic Co–Cu coevaporated epitaxial films on Cu(111) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films grown by coevaporation of Co and Cu on Cu(111) were investigated by low-energy electron diffraction and surface magneto-optical Kerr-effect measurements. The films are dominantly face-centered-cubic stacked up to high Co concentrations and exhibit ferromagnetism. Their coercivity is significantly reduced compared to pure Co films produced by thermal Co deposition on Cu(111) independent of the use of Pb as a surfactant. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306650
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  • 5
    Electronic Resource
    Electronic Resource
    Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanowires will find applications in nanoscale electronics and optoelectronics both as active and passive components. Here, we demonstrate a low-temperature vapor–liquid–solid synthesis method that uses liquid-metal solvents with low solubility for silicon and other elemental semiconductor materials. This method eliminates the usual requirement of quantum-sized droplets in order to obtain quantum-scale one-dimensional structures. Specifically, we synthesized silicon nanowires with uniform diameters distributed around 6 nm using gallium as the molten solvent, at temperatures less than 400 °C in hydrogen plasma. The potential exists for bulk synthesis of silicon nanowires at temperatures significantly lower than 400 °C. Gallium forms a eutectic with silicon near room temperature and offers a wide temperature range for bulk synthesis of nanowires. These properties are important for creating monodispersed one-dimensional structures capable of yielding sharp hetero- or homointerfaces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1401089
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  • 6
    Electronic Resource
    Electronic Resource
    Mechanism of alkali-promoted oxidation of silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1714-1716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoelectron spectroscopy data suggest that the mechanism of enhanced oxidation of Si promoted by multilayers of K deposited on its surface is based on the formation of potassium oxides, identified as K2O2 and KO2, that transfer oxygen efficiently to the Si substrate upon annealing at 900 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98553
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  • 7
    Electronic Resource
    Electronic Resource
    Study of carrier dynamics in InP:Fe using time-resolved infrared reflection and transmission (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1105-1107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dynamics of photogenerated carriers in the semiconductor InP:Fe, using 2 ps time-resolved infrared (IR) reflection and transmission. We analyze the reflection data in a new way: the transient signal is related to the Fourier transform of the injected carrier depth profile. Because of this sensitivity to the depth profile, time-resolved IR reflection is a unique tool for studying carrier dynamics and is potentially better than visible reflection or Raman scattering. We use the sensitivity of the IR reflection here to test the validity of the standard one-dimensional ambipolar diffusion model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106458
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of magnetic quantum wires by step-flow growth of cobalt on copper surfaces (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1006-1008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One-dimensional-like Co structures 50-A(ring)-wide and 3000-A(ring)-long have been grown by decoration of the monoatomic steps of a Cu(111) surface and visualized with scanning tunneling microscopy. In order to achieve step-flow growth, terrace width, evaporation rate, and substrate temperature have been carefully adjusted. The choice of the (111) terrace orientation and 〈11¯0〉 compact steps ensures a homogeneous width of the Co wires and a lateral confinement of minority-spin electrons. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113587
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  • 9
    Electronic Resource
    Electronic Resource
    Surface characterization of epitaxial, semiconducting, FeSi2 grown on Si(100) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 99-101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have identified the composition and range of thermal stability of FeSi and FeSi2 films grown on Si(100) by solid phase epitaxy and reactive deposition epitaxy. Evidence for the semiconducting character of FeSi2 is obtained from photoemission measurements giving a low density of states at the Fermi level. Si enrichment at the outer surface of the silicides at temperatures much lower than previously thought has been found by depth profiling. Scanning tunneling microscopy reveals a rather inhomogeneous growth with a tendency towards epitaxial growth favored by the presence of surface steps on the Si substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105536
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