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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 7200-7205 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate coefficients and product branching fractions have been determined for 31 ion–molecule reactions involving PF5 or PF−5. About half of the reactions studied show an ion–molecule association channel. NH−2 and OH− reaction with PF5 yields HF product. F− and electron transfer channels are also observed in many of the reactions studied. Consideration of the efficiency of the electron transfer channel in these reactions leads to the conclusion that the adiabatic electron affinity of PF5 is 0.75±0.15 eV.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 8865-8873 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A selected ion flow tube was used to conduct an extensive study of negative ion–molecule reactions of SF4 and SF−4. Rate constants and product ion branching fractions were measured for 56 reactions. The reactions bracket both the electron affinity of SF4 (1.5±0.2 eV or 34.6±4.6 kcal mol−1) and the fluoride affinity of SF3 (1.84±0.16 eV or 42.4±3.2 kcal mol−1). These results may be combined to give the neutral bond energy D(SF3–F)=3.74±0.34 eV or 86.2±7.8 kcal mol−1, independent of other thermochemical data except for the accurately known electron affinity of F. The heat of formation of SF−4 is derived from the electron affinity of SF4: ΔfH(SF−4)=−9.2±0.3 eV or −212.9±7.5 kcal mol−1. Lower limits to EA(SF2) and EA(SF3) are deduced from observation of SF−2(35%) and SF−3(65%) ion products of the reaction S−+SF4. Rapid fluoride transfer from both SF−2 and SF−3 to SF4 places upper limits on the electron affinities of SF2 and SF3. The combined results are 0.2 eV≤EA(SF2)≤1.6 eV and 2.0 eV≤EA(SF3)≤3.0 eV. We review the status of measurements of EA(SFn), n=1–7. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 8841-8848 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate coefficients for electron attachment to SF4 and SF6 have been measured over the temperature range 300–550 K using a flowing-afterglow Langmuir-probe apparatus. The 300 K rate coefficient for SF4 is 2.5±0.6×10−8 cm3 s−1, a value 11 times smaller than the corresponding rate for SF6. The attachment rate coefficients for both SF4 and SF6 are nearly independent of temperature up to 500 K, and decline somewhat at still higher temperatures. SF−4 is the only ionic product of attachment to SF4 observed over the entire temperature range. SF−6 and SF−5 are products of attachment to SF6; an "activation energy'' of 0.42±0.02 eV is inferred for SF−5 production.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 5706-5714 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the first measurements of rate constants for formation and reaction of the hydrated-hydride ion H3O−. We studied the Kleingeld–Nibbering reaction [Int. J. Mass Spectrom. Ion Phys. 49, 311 (1983)], namely, dehydrogenation of formaldehyde by hydroxide to form hydrated-hydride ion and carbon monoxide. The OD−+H2CO reaction is about 35% efficient at 298 K, with OD−/OH− exchange occurring in about half the reactions. H3O− was observed to undergo thermal dissociation in a helium carrier gas at room temperature with a rate constant of 1.6×10−12 cm3 s−1. We also studied a new reaction in which H3O− is formed: The association of OH− with H2 in a He carrier gas at low temperatures. The rate coefficient for this ternary reaction is 1×10−30 cm6 s−1 at 88 K. Rate coefficients and product branching fractions were determined for H3O− reactions with 19 neutral species at low temperatures (88–194 K) in an H2 carrier. The results of ion-beam studies, negative-ion photoelectron spectroscopy, and ion-molecule reaction data allow us to specify the hydride–water bond energy D0298(H−−H2O)=14.4±1.0 kcal mol−1 (0.62±0.04 eV). The heat of formation of H3O−, −37.5±1.0 kcal mol−1, and the proton affinity of H3O−, 386.0±1.0 kcal mol−1, are derived from these results. Dissociation of H3O− into OH− and H2 requires 4.5±1.0 kcal mol−1 energy.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 357-361 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The ion–molecule reaction OH−+H2CO→H3O−+CO has been studied at 300 K with isotopic labeling of reactants. The H3O− product is only observed in small abundance because the ion dissociates into OH−+H2 upon multiple collisions in a helium buffer gas. Without isotopic labeling, the pseudo-first-order kinetics plots for the reactions of OH− with H2CO and OD−+D2CO were found to be curved as a result of the regeneration of OH− or OD− reactant. A scavenger technique was used to remove the H3O− (or D3O−) produced prior to dissociation, to reveal the true first-order attenuation of OH− (or OD−) in reaction with H2CO (or D2CO). The rate constant for the OH−+H2CO reaction is 7.6×10−10 cm3 s−1, and for OD−+D2CO is 5.7×10−10 cm3 s−1. For the isotopically mixed cases OH−+D2CO and OD−+H2CO, the rate constants are equal to 1.3×10−9 cm3 s−1, about twice as large as those for the reactions involving only a single hydrogen isotope, indicating that isotopic exchange is an important process. The rate constants for the thermal dissociation of H3O− and D3O− in helium were found to be 1.6×10−12 and 1.1×10−12 cm3 s−1, respectively, within a factor of 2. The results are discussed in terms of other thermal dissociation reactions of ions.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2617-2628 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of physical systems whose observable properties depend upon random exceedances of critical parameters are quantitatively examined. Using extreme value theory, the dynamical behavior of this broad class of systems is derived. This class of systems can exhibit two characteristic signatures: generalized activation when far from equilibrium and noise with a characteristic power spectrum (including 1/f ) when in quasiequilibrium. Fractal structures can also arise from these systems. It is thus demonstrated that generalized activation, noise, and fractals, in some cases, are simply different manifestations of a single common dynamical principle, which is termed "extremal dynamics.'' Examples of physical processes governed by extremal dynamics are discussed, including data loss of nonvolatile memories and dielectric breakdown.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7940-7950 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Hydroxide ion (HO−) reacts with nitric oxide by slow reactive electron detachment with a rate coefficient ∼4×10−12 cm3 s−1 at 298 K. The detachment process is presumably associative detachment forming nitrous acid and an electron. Observations, data analysis, and alternative explanations for these observations are discussed. The associative detachment reaction was also investigated theoretically through calculations of the geometries, relative energies, and normal-mode vibrational frequencies of the relevant species HO−, HO, NO, cis- and trans-HONO, and cis- and trans-HONO−. These calculations indicate that in the ion HONO−, the cis conformer is more stable, while in the neutral HONO, the trans conformer is more stable. The HO–NO bond in HONO, which is formed in this reaction, is much stronger than the HO−–NO bond in HONO− with an energy of 198.7±1.8 kJ mol−1 for cis-HONO [J. Phys. Chem. Ref. Data 14, 1 (1985)] and 52.2±5 kJ mol−1 for cis-HONO− at 0 K. HONO− is bound with respect to HONO. The adiabatic electron detachment energy resulting from detachment from cis-HONO− forming the same conformer of the neutral molecule cis-HONO is 0.29±0.05 eV. The HO–NO equilibrium bond distance in HONO− is considerably longer than that in HONO, with values of 1.750 and 1.640 A(ring) for trans- and cis-HONO−, respectively, and 1.429 and 1.392 A(ring) for trans- and cis-HONO, respectively. These geometric and energetic characteristics of HONO− and HONO are combined with calculations of relative energies of these species at nonequilibrium/distorted HO–NO bond lengths to give a qualitative picture of the potential energy curves for these species along the reaction coordinate. While no significant energy barrier to autodetachment of HONO− is present, the Franck–Condon wave function overlap for autodetachment is small and is likely the reason for the observed inefficiency. The maximum calculated rate constant for associative detachment is 4×10−12 cm3 s−1, in good agreement with the observed value.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4555-4568 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A predictive formalism is developed that is applicable to the large class of activated physical systems described by a differential equation of the generic form: ∂n(φ,t)/∂t =−n(φ,t)F(t) exp(−(φ−R(t))/A(t)). Practical techniques to predict the behavior of activated physical systems for arbitrary time-dependent environments are both intuitively and mathematically developed. Useful techniques to experimentally determine the initial distribution of activation energies, utilizing arbitrary time-dependent laboratory environments, are presented. A number of fundamental results regarding the correct use and interpretation of common diagnostic techniques, such as Arrhenius plots, are derived. It is shown how the predictive results significantly enhance the ability to quantitatively evaluate the reliability of physical systems whose rate-limiting mechanisms are activated processes obeying the above differential equation. Specific issues regarding integrated circuit reliability are examined as potential applications of this predictive formalism, including time-dependent dielectric breakdown, metal electromigration, nonvolatile memory retention, annealing of radiation-induced trapped charge, and thin ferroelectric film switching properties.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1575-1577 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A beta barium borate (β-BaB2O4 or BBO) crystal has been used to electro-optically Q switch both diode-pumped and lamp-pumped Nd:YLF laser systems, resulting in stable, high average power operation. Piezoelectric ringing was found to have negligible effects on the performance of the BBO Pockels cell at repetition rates up to 6 kHz. The high damage threshold and low insertion loss of BBO permitted operation up to average powers in excess of 6 kW/cm2, which makes a BBO Pockels cell well suited for high power, small mode volume operation, such as in diode-pumped solid state lasers. Based on typical diode-pumped laser parameters, BBO is expected to extend simple compact Q-switched operation of diode-pumped lasers to average powers of 30–100 W. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 51-53 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of the self-electro-optic effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy. Clear bistability and switching are observed over a range of 40 nm around 1.61 μm with 20–30 V bias. We demonstrate the operation of a modulation convertor, which converts a modulation from a carrier at 1.6 μm onto a carrier at 0.85 μm and vice versa.
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