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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7282-7288 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SrS:Ce is an intensively investigated phosphor due to its blue-green electroluminescence, which shows efficient blue emission after filtering. Recently reported devices based on this material have demonstrated a luminous efficiency of 1.6 lm/W. The luminescence properties of SrS:Ce,X (X=Na or Cl) have been studied on powders and thin films. It is shown that a high density of traps in SrS:Ce,X occurs. The interaction of Ce3+ with traps gives rise to a phosphorescence. An energy transfer from Ce3+ to traps is responsible for an observed luminescence quenching in the presence of high electric fields. Moreover, the traps are electrically active and are involved in the electroluminescence process. The observed energy transfer is proposed to be the dominant excitation mechanism of Ce3+ in electroluminescence. It is demonstrated for thin films that the defect density increases with doping; therefore, the luminescence yield is already limited at doping concentrations below the onset of the concentration quenching. Thus, the prepared SrS:Ce,Cl thin films show a lower photoluminescence yield than powders. It is concluded that an undisturbed Ce incorporation into SrS thin films has not been achieved so far, although high electroluminescence efficiencies (1.6 lm/W) have been obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5433-5441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The output characteristics and the optical efficiency of SrS:Ce and ZnS:Mn thin-film electroluminescent devices are studied by measuring and evaluating light either directly emitted from the active area or indirectly emitted from its surroundings, including substrate edge. A special preparation of the devices allows access to edge emission and emission between pixel area and sample edge caused by scattering. The measuring method is optimized for registration of the entire output into the far field, exploiting the azimuthal symmetry of the pixel emission. In this study the optical efficiency is defined as the ratio of the directly emitted luminous flux to the total flux emitted from the segment within the sandwiched phosphor layer, which is activated. Optical efficiencies ranging from 0.16 for a smooth ZnS:Mn to 0.26 for a rougher SrS:Ce specimen are found. Theoretical limitations of the measuring method are discussed. A new quantity called scattering gain is introduced for characterizing the coupling of the output into the front hemisphere. Differential scattering gains ranging from a few percent to nearly 20% are observed. The optical characterization of SrS:Ce and ZnS:Mn samples also allows for an estimate of the optical efficiency of future inverted electroluminescent structures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5218-5222 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron paramagnetic resonance (EPR) of cerium and manganese impurities has been studied in SrS powders and thin-film electroluminescent devices (TFELD) containing an SrS luminescent layer. In both types of material the EPR signal at g=1.31 was attributed to the Ce3+ charge state. A variation of the g value, larger linewidth, and variation of the line shape in the case of TFELD samples are due to larger strains compared to the powders. The spectrum of Mn2+ has been observed in the SrS:Ce powders and in the intentionally doped SrS:Ce,Mn layers. Contrary to the undisturbed octahedral behavior of the Mn2+ centre in the powders, an additional axial distortion oriented in the growing direction of the layer was found in the TFELD structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3525-3527 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum ultraviolet reflectivity measurements of three thin-film electroluminescent phosphors, zinc sulfide (ZnS), strontium sulfide (SrS), and strontium-calcium thiogallate (Sr0.45Ca0.55Ga2S4), are reported using thin-film samples. Measured ZnS reflectivity peak positions are in agreement with values previously reported in the literature. SrS room temperature reflectivity measurements are found to be consistent with previously reported low temperature measurements. Reflectivity measurements of Sr0.45Ca0.55Ga2S4 are reported for the first time; the reflectivity spectrum is found to rise monotonically above the band gap and to exhibit almost no structure, except for a small shoulder at ∼6.8 eV and a single, broad peak at ∼8.5 eV. The unusual nature of the Sr0.45Ca0.55Ga2S4 reflectivity spectrum is attributed to positional disorder in the stoichiometric thiogallate film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Publication Date: 2015-09-02
    Description: A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted up to applied fields as high as ∼275 kV/cm.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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