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  • 1
    Electronic Resource
    Electronic Resource
    A two magnetron sputter deposition chamber for in situ observation of thin film growth by synchrotron radiation scattering (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 3344-3348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design of a sputter deposition chamber for the in situ study of film growth by synchrotron x-ray diffraction and reflectivity is reported. Four x-ray windows, sealed with low cost, nonhazardous Kapton, enable scattering both in the horizontal as well as in the vertical scattering planes. The chamber fits into a standard six-circle goniometer from Huber which is relatively widespread in synchrotron laboratories. Two miniature magnetron and additional gas inlets allow for the deposition of compound films or multilayers. Substrate heating up to 650 °C and different substrate bias voltage are possible. The performance of the chamber was tested with the deposition of high quality TiN films of different thicknesses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384432
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  • 2
    Electronic Resource
    Electronic Resource
    Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4184-4187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of C ions with an energy of 195 keV into Si wafers heated up to 800 °C results in an elastic distortion of the Si host lattice and in the formation of crystalline SiC particles or their prestages depending on implantation dose and temperature. Synchrotron x-ray diffraction at the Rossendorf beamline in Grenoble was used to reveal phase formation and the correlated lattice strain changes. Only a Si lattice deformation without growth of SiC was observed if the fluence did not exceed 5×1015 C ions/ cm2. After implantation of C ions up to 4×1017 cm−2 at a temperature of 500 °C, agglomerations of Si–C and an altered state of Si lattice deformation are found. By implantation of 4×1017 ions/cm2 at 800 °C, particles of the 3C–SiC (β-SiC) phase grow, which are aligned with the Si matrix. They are aligned in such a way with the Si matrix that the cubic crystallographic axes of matrix and particles coincide with an accuracy of 3°. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371344
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  • 3
    Electronic Resource
    Electronic Resource
    Development of texture in TiN films by use of in situ synchrotron x-ray scattering (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2037-2044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During growth, the microstructural development of TiN films was studied—especially the change in texture with film thickness. The films were deposited by use of a magnetron sputtering source in a vacuum chamber equipped with two magnetron sources and mounted on a goniometer located at a synchrotron radiation beam line. X-ray diffraction and reflectivity measurements were carried out in situ to follow the microstructure as a function of film thickness. With the deposition parameters that were chosen, a crossover was observed: grains with a (002) plane parallel to the film surface dominated at small thicknesses, while, at larger thicknesses, (111) grains dominated. Recrystallization was identified as a mechanism that controls this texture development. The driving force for change of orientation of the individual grains arose from minimalization of the sum of the surface energy and the strain energy of the individual grains. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436558
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  • 4
    Electronic Resource
    Electronic Resource
    Multimodal impurity redistribution and nanocluster formation in Ge implanted silicon dioxide films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3215-3217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth distribution of Ge implanted into thermally grown SiO2 films has been studied after annealing using transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray diffraction. At annealing temperatures above 900 °C a significant redistribution of the as-implanted Ge profile was found. Crystalline Ge nanoclusters embedded in the SiO2 matrix are formed within a cluster band with well defined boundaries. The evolution of nanoclusters can be explained qualitatively by a model based on nucleation, growth and Ostwald ripening of Ge precipitates. Besides, chemical and interface reactions lead to the formation of additional Ge peaks near the surface and at the Si/SiO2 interface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120294
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