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  • 1
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have observed, and assigned, the fluorescence excitation spectrum of the 000 band in the 1B1←1A1 electronic transition of pyrimidine, at a resolution of ∼10 MHz. The rotational constants of the 1B1 state, the lowest excited singlet state, are A'=6352±3, B'=5853±3, and C'=3042.0±0.5 MHz. The magnitudes of these constants are not very different from those of the ground (1A1) state. However, the in-plane a and b inertial axes in the 1B1 state are rotated by 90° with respect to those of the 1A1 state. The spectrum also exhibits numerous perturbations, evidenced by the presence of extra lines, anomalous intensities and lifetimes, and shifts of the main lines from their expected positions. The perturbations are strongly magnetic-field dependent, demonstrating that they arise from an intramolecular coupling of the 1B1 state with nearly isoenergetic rovibronic levels of a lower triplet (3B1) state. Models are proposed to account for this behavior based on a deconvolution of the experimental spectrum and simulations of the observed Zeeman effects. The most satisfactory interpretation of the data (in the language of the zero-order states) is obtained if it is assumed that a single rovibronic 1B1 level is spin–orbit coupled to one or a few 3B1 levels, which in turn are coupled via rotationally dependent Coriolis interactions to a dense manifold of background levels, probably those of the 1A1 state. Because the latter coupling is small, typically less than the linewidths in the spectra, it is manifested only in a K'+1 dependence of the lifetimes of selected molecular eigenstates and the reduced g values required to fit the magnetic-field dependence of their spectra.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 3960-3965 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rotation-vibration spectra of 28SiF4-Ar and 28SiF4-84Kr complexes have been studied in the 10 μm region. The triply degenerate ν3 (F2) band of SiF4 reduces to nearly degenerate parallel (A) and perpendicular (E) band of the complex with the C3v structure. The two bands coupled by an A−E Coriolis interaction have been analyzed simultaneously. No splitting due to internal motion has been observed. Band shifts by the formation of the complex are discussed in conjunction with the magnitudes of A−E splitting. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Since the start of the Large Helical Device (LHD) experiment, various attempts have been made to achieve improved plasma performance in LHD [A. Iiyoshi et al., Nucl. Fusion 39, 1245 (1999)]. Recently, an inward-shifted configuration with a magnetic axis position Rax of 3.6 m has been found to exhibit much better plasma performance than the standard configuration with Rax of 3.75 m. A factor of 1.6 enhancement of energy confinement time was achieved over the International Stellarator Scaling 95. This configuration has been predicted to have unfavorable magnetohydrodynamic (MHD) properties, based on linear theory, even though it has significantly better particle-orbit properties, and hence lower neoclassical transport loss. However, no serious confinement degradation due to the MHD activities was observed, resolving favorably the potential conflict between stability and confinement at least up to the realized volume-averaged beta 〈β〉 of 2.4%. An improved radial profile of electron temperature was also achieved in the configuration with magnetic islands, minimized by an external perturbation coil system for the Local Island Divertor (LID). The LID has been proposed for remarkable improvement of plasma confinement like the high (H) mode in tokamaks, and the LID function was suggested in limiter experiments. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1318-1320 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping properties of the interface states present at the AlN/n-GaAs interfaces are investigated through high-frequency capacitance transients. They change their behavior from electron to hole traps with the excursion of surface Fermi level towards the valence band. This observation indicates that it is ionization of the states near midgap, not the hole inversion, which blocks the downward excursion of surface potential in GaAs/ insulator systems. It is also found that these states are well defined in terms of having a single capture cross section within the energy range probed, and furthermore, they are spatially localized at the interface.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 5609-5612 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Clear evidence for the nonthermal acoustic wave enhancement of a catalytic reaction over a single crystal metal surface under controlled conditions is provided in this Letter. Data demonstrating a fourfold increase in the rate of CO oxidation over a thin Pt{110} catalyst bonded onto the surface of a piezoelectric interdigital transducer is discussed here together with a possible mechanism for this effect. © 1997 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5126-5135 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional distributions of films laser deposited in vacuo at energy densities 〈1 J/cm2 were found to be partly different from previous observations and theories. Analyzing them, we have inferred that evaporation processes at low energy densities contain decomposition of the target materials and evaporation of the decomposed materials. Based on these analyses, we have concluded that pulsed laser codeposition was one of best pulsed laser deposition methods. To realize this using one laser source, a modified version of pulsed-laser-deposition rapid-sequential-pulsed-laser deposition, is introduced. The dependence of YBa2Cu3O7 films properties on deposition conditions is discussed. Elimination of particulates is demonstrated and good electrical and crystallographic properties as well as suppression of precipitates were achieved in films having the correct stoichiometric composition. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6538-6543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of high-efficiency solar cell has been developed by a simple production process only with electron cyclotron resonance plasma-assisted chemical vapor deposition of highly conductive microcrystalline silicon carbide (μ c -SiC) on polycrystalline silicon (poly-Si). The device consists of a p -type μ c -SiC/ n -type poly-Si heterojunction where the window material is a specially made wide-band gap and highly conductive μ c -SiC. At the present stage, a conversion efficiency of 15.4% with V oc=556 mV, J sc=35.7 mA/cm2, and F. F.=77.4% has been achieved. Also employing this device as a bottom cell in a four-terminal amorphous silicon ( a -Si) tandem-type solar cell, 16.8% efficiency has been obtained. A series of technical data on the fabrication technology and device performance is presented and discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2466-2474 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface states at the AlN/GaAs interface, which play a dominant role in pinning the surface potential, are studied by means of quasi-static and high-frequency capacitance transient methods. Their charge transfer processes are found to be well described based on the simple deep-level picture. The observation of both behavior as electron traps as well as hole traps has provided evidence that the ionization of these states, not the surface inversion, is the surface potential pinning mechanism in the present insulator-semiconductor system. The time-variant field effect on the electron emission process is observed and reveals the donor nature of the relevant interface states. It is also argued that a defect-related origin is favored rather than a continuously distributed scheme for the interface states examined in the study.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5109-5110 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the oxygen sensitivity of Pt-Pd/p-type CaFe2O4 and Pt-Pd/Rh/p-type CaFe2O4 diodes, where the CaFe2O4 shows Fermi-level pinning. Reversible oxygen responses were observed for both diodes at 100 °C, where current under bias increased with increasing oxygen concentration. Response time was decreased by Rh doping. Thus, these diodes act as an oxygen sensor at a relatively low temperature. The Schottky barrier height φ, determined from the measured photocurrent-bias curve, decreased with an increase in oxygen concentration. The experimental value of dφ/d log PO2 was 0.11 eV/decade, and was much larger than the theoretical value of 0.018 eV/decade based on the surface redox reaction mechanism in the surface state. The difference in this value indicates that the bias is applied to the bulk as well as to the space-charge layer at the surface.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 11 (1999), S. 1907-1920 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Dynamic Molecular Collision (DMC) model is constructed for accurate and realistic simulations of rarefied gas flows of nonpolar diatomic molecules by the Direct Simulation Monte Carlo (DSMC) method. This model is applicable for moderate temperatures (up to a few hundred K for nitrogen), where most molecules are in the vibrational ground state and the vibrational degree of freedom can be neglected. In this range, moreover, the rotational energy can be considered as a continuous one. The collisions of diatomic molecules are simulated many times by the Molecular Dynamics (MD) method at various initial conditions. The site to site potential is used as an intermolecular one. The collision cross section is developed from the database obtained by MD simulation and kinetic theory of viscosity coefficient of diatomic molecules. The probability density function of energy after collision is also developed using the database. In order to verify the DMC model, two flow fields are simulated. First, the DMC model is applied to the simulation of the translational and rotational energy distribution at the equilibrium condition and the results are compared with the Maxwell distribution. The results agree very well with each other. Second, the DMC model is applied to the simulation of the rotational relaxation through low and high Mach number normal shock wave. These results also agree very well with the experimental results of Robben and Talbot, although the upstream rotational temperature is a little lower. © 1999 American Institute of Physics.
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