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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    X-ray reflectivity and transmission electron microscopy studies on thin and ultrathin W/C and W/Si multilayers structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3453-3458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin and thin bilayers of W coupled with C and Si have been deposited by rf magnetron sputtering. Behavior of the multilayer structures (MLS) has been analyzed through two combined techniques: x-ray reflectivity and electron microscopy study and conventional (TEM) and high-resolution transmission (HRTEM). The experimental results we present provide average informations on the reflective characteristics of the mirrors in agreement with theory, comparative values of parameters (thickness and interfacial roughness of the bilayers), as well as structural characteristics of the stackings. We focused on ultrathin W/Si MLS with a bilayer thickness of 1.5 nm that present excellent regularity with effective roughness less than 3 A(ring). They offer reflective qualities to be used as reflectors with an angle 2θ〉6° in the first order for the medium x-ray range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342613
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  • 2
    Electronic Resource
    Electronic Resource
    High-resolution electron-microscopy studies on laser-annealed unsupported amorphous germanium films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5199-5204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first results on high-resolution electron-microscope observations of unsupported amorphous germanium films, crystallized in situ by pulsed laser irradiation, are presented. They provide new information on structure and perfection of the as-grown crystals and on the morphology of the crystal-amorphous interface. It is shown that, after crystallization, amorphous regions can exist as inclusions among dendrites. The structure of the crystal-amorphous interface depends on its crystallographic orientation and is probably related to the degree of relaxation of the amorphous phase in its immediate vicinity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335257
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  • 3
    Electronic Resource
    Electronic Resource
    Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiations (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1739-1741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin amorphous multilayers structures (1.55 nm bilayer period) were irradiated by high-energy heavy ion (127I and 238U ions). Transmission electron microscopy study shows that the ion-material interaction in such a configuration leads to an irreversible transformation of the initial amorphous structures. In this letter, we report the first observation of the crystallization of the multilayers induced by the heavy ion irradiations with a subsequent formation of a new WSi structure. The crucial role of the electronic effects in the crystallization process is discussed relatively to the other phenomena induced under the ion irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104052
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