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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 619-621 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy, infrared absorption, and refractive index measurements have been carried out on films of amorphous SiO2 deposited by plasma enhanced chemical vapor deposition from SiH4 and N2O gases. It is demonstrated that the films have physical characteristics different from those of thermally grown or bulk oxide. Comparison with the data obtained from neutron irradiated, bulk SiO2 leads to the conclusion that deposited oxides and heavily neutron irradiated oxides have a similar and unusual network structure. In this network the Si—O—Si bond angles are substantially reduced (∼10°) with respect to bulk and relaxed silica. The three membered ring density is significantly enhanced and there is a considerably larger fraction of free volume. These structures coincide with materials having a fictive temperature in excess of 2400 °C and it is argued that they are analogous to the porosil structure known in crystalline forms of SiO2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3346-3348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present and discuss the statistical mechanics of the static properties associated with a one-dimensional classical spin–Peierls Heisenberg chain. Thermodynamic properties and correlation functions are calculated numerically from the eigenvalues of the transfer matrix. All fluctuations from the magnetic and elastic degrees of freedom are considered. Among other results, it is shown that magnetization and dimerization do not tend to occur simultaneously.
    Type of Medium: Electronic Resource
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