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  • 1
    Electronic Resource
    Electronic Resource
    Rydberg excited iodine–argon van der Waals complexes studied by resonance enhanced multiphoton ionization spectroscopy (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 126-138 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Several new gerade Rydberg states of the I2–Ar van der Waals complex are reported in the region 53 000–69 000 cm−1 above the electronic ground state, using mass resolved (2+1) resonance enhanced multiphoton ionization (REMPI) spectroscopy. The spectra all exhibit anharmonic vibrational progressions in the I2...Ar van der Waals stretching mode, ν3, having typical ωe values in the range 49–62 cm−1, depending upon the principal quantum number of the Rydberg state involved. The observed increase in ωe and spectral red shift which accompanies the increase in principal quantum number is consistent with a progressive strengthening of the van der Waals bond, resulting from less effective shielding of the ion core by the Rydberg electron. The apparent good Franck–Condon overlap in the ν3 mode between the ground state and the Rydberg states together with the absence of any clear evidence of bending mode progressions in the spectra, indicates that the I2–Ar complex retains a T-shaped geometry in all the Rydberg excited states observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468452
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  • 2
    Electronic Resource
    Electronic Resource
    Simulation of flow through bead packs using the lattice Boltzmann method (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 60-74 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice Boltzmann method (LBM) is used to simulate viscous fluid flow through a column of glass beads. The results suggest that the normalized velocity distribution is sensitive to the spatial resolution but not the details of the packing. With increasing spatial resolution, simulation results converge to a velocity distribution with a sharp peak near zero. A simple argument is presented to explain this result. Changes in the shape of the distribution as a function of flow rate are determined for low Reynolds numbers, and the large-velocity tail of the distribution is shown to depend on the packing geometry. The effect of a finite Reynolds number on the apparent permeability is demonstrated and discussed in relation to previous results in the literature. Comparison with velocity distributions from NMR (nuclear magnetic resonance) spectroscopy finds qualitative agreement after adjusting for diffusion effects in the NMR distributions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869550
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  • 3
    Electronic Resource
    Electronic Resource
    Radiation effects on gate induced drain leakage current in metal oxide semiconductor transistors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4958-4962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate induced drain leakage current (Idl) of metal oxide semiconductor (MOS) transistors changes significantly when the devices are exposed to ionizing radiation. For n-channel MOS transistors, Idl decreases, whereas for p-channel devices, it increases. The change of leakage current at higher tunneling fields is proportional to the increase of hole trap density in the gate oxide region. The leakage current measurement technique is a useful tool for characterizing radiation effects in MOS transistors because at higher bias it is dependent on increase of oxide charge while independent of interface states. The annealing of trapped charges at the tunnel junction is faster than in the channel region as determined from subthreshold characteristics. The results of the thermal annealing experiment reveal that the drain current in the control region is attributed to interface state assisted tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352065
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  • 4
    Electronic Resource
    Electronic Resource
    Ferroelectricity and ferrimagnetism in iron-doped BaTiO3 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2536-2538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and physical properties of pseudocubic thin-film BaTi1−xFexO3(0.5≤x≤0.75) grown by pulsed-laser deposition are reported. This material is of interest because the corresponding bulk compounds have hexagonal structure for comparable x, and because the films are both ferroelectric and ferrimagnetic well above room temperature. A substantial increase of the ferroelectric transition temperature relative to that of bulk BaTiO3 is attributed to lattice expansion induced by Fe doping. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367311
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