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  • 1
    Electronic Resource
    Electronic Resource
    The growth of Fe on sulphur passivated Ge(100): A technique for avoiding intermixing : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5641-5643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Fe on Ge(100) surfaces results in the intermixing of Ge with the Fe overlayer, producing relatively thick magnetic dead layers. In this paper we describe a new technique, the growth of Fe overlayers on S-passivated Ge(100), which successfully prevents the intermixing of Ge with the Fe overlayer. Bcc Fe(100) is observed to grow epitaxially on this substrate, with the S floating out as an ordered overlayer. The S prevents intermixing by acting as a surfactant, holding the Fe on top of the substrate and preventing interdiffusion. The Fe overlayers are observed to be ferromagnetic in nature, displaying sharp hysteresis loops with easy axes along the Fe[010] directions. A uniaxial in-plane anisotropy is observed, which results in the two easy axes being inequivalent. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362267
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  • 2
    Electronic Resource
    Electronic Resource
    Etching by atomic hydrogen of Ge overlayers on Si(100) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3614-3622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectrometry (LEISS) have been employed to study the kinetics of etching by atomic hydrogen of Ge overlayers on Si(100). The coverage of Ge as deduced by both XPS and LEISS decreases dramatically after exposure to atomic hydrogen, and the decrease is exponential with exposure time. The etch rate of Ge derived from these experiments is found to be a linear function of the flux of atomic hydrogen at sufficiently low temperatures (〈180 °C). The rate of etching also depends upon the substrate temperature and a maximum in the etch rate is observed at about 180 °C. A kinetic model is proposed to describe the experimental data quantitatively. The model successfully describes the variation in the rate of etching as functions of the flux of atomic hydrogen and substrate temperature. In particular, the peak observed in the etch rate as a function of substrate temperature is interpreted as due to a similar variation in the coverage of an important reaction intermediate, namely a GeH2(a) surface species. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394898
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  • 3
    Electronic Resource
    Electronic Resource
    Nucleation of copper on TiN and SiO2 from the reaction of hexafluoroacetylacetonate copper(I) trimethylvinylsilane (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2604-2606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation of copper on TiN and SiO2 surfaces has been investigated using a collimated molecular beam of hexafluroacetylacetonate copper(I) trimethylvinylsilane in ultrahigh vacuum. The Cu thin film precursor was delivered using a bubbler with H2 as the carrier gas and the substrate temperature was varied from 150 to 260 °C. Ex situ analysis of thin film morphology and microstructure has been conducted using scanning electron microscopy. On SiO2 surfaces the Cu nuclei density reaches a maximum near 5×1010 cm−2, nearly independent of substrate temperature. In contrast, on TiN surfaces the maximum nuclei density is strongly dependent on temperature, varying nearly two orders of magnitude from 150 to 260 °C. On TiN the nucleation process is described well by established kinetic models where a maximum in nuclei density (Nmax) is predicted with respect to the time, and where this quantity exhibits an Arrhenius dependence on substrate temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1469687
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  • 4
    Electronic Resource
    Electronic Resource
    Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2181-2183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here a low-temperature (Ts〈630 °C) process for the selective epitaxial growth of Si that employs atomic hydrogen. Modulation of both the substrate temperature and the flux of atomic hydrogen gives alternating growth and suppression/etching cycles, resulting in a significant increase in selectivity. Epitaxial thin-film quality is essentially unaffected, as verified by in situ analysis via low-energy electron diffraction, and ex situ analysis via scanning electron and atomic-force microscopy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408271
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of Permalloy thin films electrodeposited on Si(111) surfaces (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7595-7599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrochemical conditions for the direct electroplating of Ni–Fe Permalloy (19% Fe, 81% Ni) thin films onto Si(111) surfaces were determined. The film composition, structure, and magnetic properties were examined by various techniques involving Auger electron spectroscopy depth profiles analysis, scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and magneto-optic Kerr effect measurements. The Permalloy films consisted of 10–50-nm-diam Ni/Fe nanocrystallites. It was found that the coercivity decreased with increased film thickness. Moderate annealing of the films below 200 °C released stress in the films and led to a decrease in coercivity. Interfacial diffusion occurred after the annealing of films above 300 °C. The Ni–Fe films exhibited bulk properties after the completion of electrodeposition of a buffer layer of thickness 〉20 nm; below this thickness, the films were discontinuous and consisted of separated clusters or islands on the Si surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365305
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  • 6
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    Simulating x-ray Thomson scattering signals from high-density, millimetre-scale plasmas at the National Ignition Facility (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-15
    Description: We have developed a model for analysing x-ray Thomson scattering data from high-density, millimetre-scale inhomogeneous plasmas created during ultra-high pressure implosions at the National Ignition Facility in a spherically convergent geometry. The density weighting of the scattered signal and attenuation of the incident and scattered x-rays throughout the target are included using radial profiles of the density, opacity, ionization state, and temperature provided by radiation-hydrodynamics simulations. These simulations show that the scattered signal is strongly weighted toward the bulk of the shocked plasma and the Fermi degenerate material near the ablation front. We show that the scattered signal provides a good representation of the temperature of this highly nonuniform bulk plasma and can be determined to an accuracy of ca. 15% using typical data analysis techniques with simple 0D calculations. On the other hand, the mean ionization of the carbon in the bulk is underestimated. We suggest that this discrepancy is due to the convolution of scattering profiles from different regions of the target. Subsequently, we discuss modifications to the current platform to minimise the impact of inhomogeneities, as well as opacity, and also to enable probing of conditions more strongly weighted toward the compressed core.
    Print ISSN: 1070-664X
    Electronic ISSN: 1089-7674
    Topics: Physics
    Published by American Institute of Physics (AIP)
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