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  • 1
    Electronic Resource
    Electronic Resource
    The doping concentration dependence of zinc and tin in InGaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2211-2213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In0.53Ga0.47As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5 °C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D0,A0) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10−8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein–Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342499
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  • 2
    Electronic Resource
    Electronic Resource
    GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time, the performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR). Stripes of Si++ with a period of 2300 A(ring) and a dose ∼1014 cm−2 are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 °C are obtained. The wavelength tuning rate with temperature is 0.8 A(ring)/°C. The coupling coefficient is estimated to be 15 cm−1. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100142
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation microstructures on flat and stepped Si surfaces: Guidance for growing high-quality GaAs on (100) Si substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1386-1388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Type-I dislocations at the GaAs/Si interface are beneficial because they effectively relax the mismatched stress, but do not propagate into the GaAs film. Accordingly, the best way to grow a low defect density GaAs film on a Si substrate is to form as many as possible type-I dislocations or, equivalently, to suppress other kinds of defects. The high-resolution transmission electron microscopy study shows that most of the type-I dislocations are formed at the double step on a Si surface. It is further determined that the silicon surface steps are mainly due to the substrate tilting instead of the heating before growth. Based on our study, the (100) Si substrate with double steps along both [110] and [11¯0] axes provides the best condition for growing low defect density GaAs on Si substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99124
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  • 4
    Electronic Resource
    Electronic Resource
    Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346222
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  • 5
    Electronic Resource
    Electronic Resource
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346355
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  • 6
    Electronic Resource
    Electronic Resource
    Wavelength tuning and switching of a coupled distributed feedback and Fabry–Perot cavity laser (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 291-294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical analysis of a newly demonstrated semiconductor laser with coupled distributed feedback and Fabry–Perot (DFB-FP) cavities and show that three modes of operation are possible for such a laser. In mode-switched DFB mode, the wavelength can be switched between longitudinal modes on either side of the stopband. In coupled-cavity laser mode, there are successive mode hops inside the stopband. Finally, in continuously tunable distributed Bragg reflector mode, a wide wavelength tuning range (4.8 A(ring)) without mode hopping can be obtained. The analysis is general enough to be applied to any laser with a periodic waveguide section, and provides an understanding of the mechanisms and the limits of wavelength tuning in such lasers. This type of laser has very important applications in coherent optical communications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340292
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  • 7
    Electronic Resource
    Electronic Resource
    The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2541-2544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devices have been fabricated by liquid-phase epitaxy. Three different compositions (x=0.45, 0.58, and 0.85) of AlxGa1−xAs layers were made to compare their properties. Diodes fabricated from these heterostructures have been characterized by electron beam induced current, electroluminescence, quantum efficiency, output power, and current-voltage measurements. Emission peak wavelengths and full width at half maximum values of the light emitting diodes are, respectively, 652.5, 654.4, and 652.8 nm, and 67, 67, and 75 meV. The peak wavelengths of the light emitting diode shift 6 meV towards the lower-energy side compared to the photoluminescent peak wavelength of the same electron concentration in the Te-doped In0.5Ga0.5P layer. For most light emitting diodes, output powers and efficiency are in the range of 50–100 μW and 0.062%–0.1%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339467
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  • 8
    Electronic Resource
    Electronic Resource
    The doping concentration dependence of the zinc acceptor ionization energy in In0.49Ga0.51P (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3907-3908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The doping concentration dependence of the zinc acceptor energy level in In0.49Ga0.51P has been studied and can be expressed as EA=45.75−8.20×10−6 P1/3 meV, where P is the zinc acceptor concentration in cm−3. The zinc-doped In0.49Ga0.51P epitaxial layers were grown on 〈100〉 oriented semi-insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335610
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence from Mg-doped In0.5Ga0.5P grown by liquid-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2309-2312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction–band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017–7.0×1018 cm−3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm−3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976 − [7.5 ×10−4 T2/(T + 500)] eV. For the moderately doped concentration (p 〈 1.4 × 1018 cm−3), the Mg acceptor ionization energy obtained from 50-K photoluminescent spectra is in the range from 37 to 40 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349425
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  • 10
    Electronic Resource
    Electronic Resource
    InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3040-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346396
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