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  • 1
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    Effects of interface and bulk properties of gate-dielectric on the performance and stability of hydrogenated amorphous silicon thin-film transistors (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-12-18
    Description: In order to investigate the effects of interface and bulk properties of gate insulator on the threshold voltage (V th ) and the gate-bias induced instability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), four kinds of TFT structures were fabricated with SiNx and SiOx insulators stacked to make different combinations of the bulk and interface in the gate-dielectric layers. It was found that the V th and the stability are independently controlled by tuning stoichiometry and thickness of the SiOx insertion layer between a-Si:H and SiNx. In TFTs with SiO x insertion layer of 50 nm thickness, on increasing oxygen/silicon (O/Si = x) ratio from 1.7 to 1.9, V th increased from 0 V to 9 V. In these TFTs with a relatively thick SiOx insertion layer, positive V th shift with negative bias stress was observed, confirmed to be due to defect creation in a-Si:H with the thermalization barrier energy of 0.83 eV. On reducing the thickness of the SiOx insertion layer down to approximately 1 nm, thin enough for hole injection through SiOx by tunneling effect, stable operation was obtained while keeping the high V th value under negative stress bias. These results are consistently explained as follows: (1) the high value for V th is caused by the dipole generated at the interface between a-Si:H and SiOx; and (2) two causes for V th shift, charge injection to the gate insulator and defect creation in a-Si:H, are mutually related to each other through the “effective bias stress,” V bs eff  = V bs – ΔV fb (V bs : applied bias stress and ΔV fb : flat band voltage shift due to the charge injection). It was experimentally confirmed that there should be an optimum thickness of SiO x insertion layer of approximately 1 nm with stable high V th , where enhanced injection increases ΔV fb , reduces V bs eff to reduce defect creation, and totally minimizes V th shift.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    A precision Bond method with SR : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2410-2413 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A system for a very high precision absolute lattice spacing measurement has been developed. It employs, in principle, a bond method using a highly collimated and a very narrow bandwidth beam available from a monolithic (+, +) monochromator. Owing to the temperature stabilization of the hutch, where the equipment is installed, it has routinely achieved a precision of 2 parts in 106 in lattice spacing measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140732
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  • 3
    Electronic Resource
    Electronic Resource
    Beamline 14B at Photon Factory: Precision x-ray optics experiment facility (abstract) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2442-2442 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The beamline 14B at Photon Factory is one of three branches of the 5T vertical superconducting wiggler beamline (BL14) at Photon Factory. This branch is used mainly for precision x-ray optics experiments and partly for commissioning a low-angle double-crystal spectrometer and a gas-phase scattering apparatus. A double-crystal fixed-exit monochromator was installed on this beamline; it has two offset positions, 200 and 500 mm. In order to avoid the leak of high-energy x rays from the monochromator chamber, the first crystal is shielded by lead with a rotatable 2θ window inside the vacuum chamber. A precision x-ray optics experiment facility consists of two vertical axis goniometers designed for the use of vertical polarization. Rough rotation (360° with the finest step of 3.24 arcsec) and fine rotation (within 6°, the finest step of 0.01 arcsec) are changed with a clutch. A rotary encoder with precision of 1.0 arcsec is equipped. A double-crystal aligner mounted on one of the precision goniometers is constructed to make another double-crystal arrangement. Combining the beamline double-crystal monochromator with this aligner, we can make a fixed-exit four-crystal monochromator of (+n,−n,−m,+m) setting, known as the high resolution x-ray optics in energy as well as momentum. Two independent microcomputer control systems are used for beamline monochromator and experimental facility. These two systems are connected by a serial communication (RS-232C) line via a software controlled line selector. This makes it quite easy for user-made equipment to control the beamline monochromator synchronously by its own control system. A low-angle double-crystal spectrometer was further constructed to characterize synthetic multilayers. This spectrometer consists of two ω-2θ goniometers mounted on x- (used for vertical axis) or xz- (used for horizontal axis) translation stage. These goniometers are mounted on independent carriers of a y-translation stage along the x-ray beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140745
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  • 4
    Electronic Resource
    Electronic Resource
    Diffusion of both Ga and Bi into InSb seeds during growth of InGaSbBi (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 858-864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In1−xGaxSb1−yBiy (0〈x≤0.21, 0〈y≤0.005) quaternary bulk single crystals were grown on InSb seed crystals using a rotary Bridgman method. In order to investigate the quality of these crystals, various kinds of measurements were carried out, such as optical microscope, x-ray topograph, four-crystal x-ray diffractometry, electron-probe microanalysis, energy-dispersive spectroscopy, and secondary-ion-mass spectroscopy. All grown crystals were 10 mm in diameter and more than 10 mm in length. This indicates that the rotary Bridgman method was useful to grow quaternary bulk single crystals. Owing to segregation, the compositional ratio of Bi (y) increased and that of Ga (x) decreased as crystals grew. During growth of InGaSbBi, both Ga and Bi diffused into the InSb seed and there appeared domains of InBi. For comparison, InSb1−yBiy (0〈y≤0.05) and In1−xGaxSb (0〈x≤0.16) were grown on InSb. It turned out that Bi did not diffuse into InSb without Ga, but Ga diffused without Bi. The incorporation of Ga produced the excess In and as a result InBi domains were formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357761
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of the x-ray photoacoustic signal intensity of copper on sample thickness and modulation frequency (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5187-5189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hard x-ray photoacoustic signal intensities of copper have been measured at an x-ray absorption near-edge structure (XANES) region as functions of sample thickness (from 5 to 300 μm) and modulation frequency (from 5 to 50 Hz). It is shown that the photoacoustic signal intensities show maxima at the sample thickness close to 10 μm for each modulation frequency. The x-ray photoacoustic signal varies from f−1.0 ( f denotes modulation frequency) up to 20 μm sample thickness, whereas it varies from f−0.5 beyond a 20 μm sample thickness, which is not consistent with the Rosencwaig–Gersho theory for the photoacoustic effect in solids.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351999
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  • 6
    Electronic Resource
    Electronic Resource
    Composition dependence of lattice spacing for low dislocation density undoped liquid encapsulated Czochralski GaAs crystals (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 182-184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystals with varied composition were pulled by the As-partial-pressure controlled liquid encapsulated Czochralski method. The dislocation density was found to be as low as 2×103 cm−2 at the cores of the crystals. Lattice spacing (d) was measured with a precision of Δd/d ∼ 5.9 × 10−6 using synchrotron radiation. For a variation of 7×10−5 in the As-atom fraction in the crystals, the lattice spacing varied by less than 1×10−5 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347740
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  • 7
    Electronic Resource
    Electronic Resource
    Role of Eu2+ luminescent centers in the electro-optical characteristics of red-emitting CaS:Eu thin-film electroluminescent devices with memory (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3578-3583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to investigate the role of the Eu2+ luminescent centers in determining the electro-optical characteristics of red-emitting CaS:Eu thin-film electroluminescent (TFEL) devices with inherent memory, light irradiation effects on these characteristics were studied. Both the threshold voltage and the response time decreased by light irradiation at wavelengths of 400–600 nm. This wavelength region coincides with that of the direct-excitation spectrum of Eu2+. Furthermore, emission peak height at the trailing edge of the pulse drive voltage increased by light irradiation in the same wavelength region. Since this emission is assumed to be caused by recombination of diffusing electrons with holes located at the ionized Eu2+ luminescent centers, increase in the emission peak height at the trailing edge of the pulse drive voltage indicated an increase in the number of the ionized Eu2+ luminescent centers. From these arguments we conclude that ionized Eu2+ luminescent center is a possible source of positive space-charge, which is known to play a decisive role in the memory and response characteristics of TFEL devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346317
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  • 8
    Electronic Resource
    Electronic Resource
    High-resolution Compton profile spectrometer for 29.5-keV x rays with a combination of crystal analyzer and imaging plate : International conference on synchrotron radiation instrumentation (SRI−88) (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2402-2405 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution Compton spectrometer has been installed for 29.5-keV incident x rays from a vertical wiggler inserted in the 2.5-GeV storage ring of the Photon Factory at Tsukuba. This spectrometer consists of bent-crystal monochromator, a Cauchois-type bent-crystal analyzer, and an imaging plate as a position sensitive detector. The overall momentum resolution is 0.084 a.u. for the incident x-ray energy of 29.5 keV. High-resolution Compton profile measurements on Al, a quasicrystal Al-Li-Cu, and solid and liquid phase of Li are shown to demonstrate the performance of this spectrometer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140730
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  • 9
    Electronic Resource
    Electronic Resource
    Instrumentation for x-ray photoacoustic imaging and depth profiling : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2468-2470 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A proposed photoacoustic imaging by a scanning focused x-ray beam has been investigated. The experimental setup and its current performance are shown using model samples. The current spatial resolution, 0.5 mm, by this method is limited by detector sensitivity or photon flux. For the study of the nondestructive three-dimensional analysis of atomic components, the computer system has the commands to estimate the average values of the signal amplitude and phase at the desired areas. Layered samples were measured for demonstration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140701
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  • 10
    Electronic Resource
    Electronic Resource
    High energy high resolution monochromatic x-ray computed tomography using the Photon Factory vertical wiggler beamline : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 615-618 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a high resolution monochromatic x-ray computed tomography system using synchrotron radiation in the energy range up to 50 keV. The system was installed in a vertical wiggler beamline (BL14C) at the Photon Factory of the National Laboratory for High Energy Physics, and consists of a double-crystal monochromator employing asymmetric Bragg reflections, a photodiode array detector with a phosphor screen, and a microcomputer for control. Computed tomography (CT) images with a pixel size of 6 to 8 μm and with a slice width ranging from 20 to 100 μm were obtained. An image subtraction technique for CT images above and below the x-ray absorption edge of iodine was also evaluated for liquid-containing glass capillaries. Since the CT value (pixel weighting) is linearly proportional to the concentration, the system can quantitatively evaluate the concentration distribution of iodine. These results indicate that the system is very useful for nondestructively evaluating fine structures and their constituent elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142668
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