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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5457-5457 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently an elegant and quite powerful finite-system approach to determine the exponents ηx and ηz from simple spectral properties has been proposed. For critical systems, the two exponents can be expressed in terms of finite-size spectral gaps as follows: η(N)x=2ΔE01(N)/ΔE(N), η(N)z=2ΔE00(N)/ΔE(N). Here ΔE(N) is the finite-size gap between the ground state (SzT=0,k=0) and the lowest excitation at k=2π/N; ΔE01(N) is the gap to the lowest ||SzT||=1 excitations (at k=π), and ΔE00(N) is the gap to the next lowest SzT=0 excited state. The η(N) sequence is then extrapolated to N→∞. For XY models, differences between s=1/2 and s≥1 appear. For s=1/2, the excitations which determine ΔE00(N) and ΔE(N) are degenerate, which implies that ηz=1/2, in agreement with the exact analytic result. For spin-1, however, the next lowest SzT=0 state is located at k=2π/N instead of k=π, and is therefore identical to the state which determines the gap ΔE.The resulting equality ΔE=ΔE00 implies ηz=2, as in the spin-1/2 case. In fact, our result corresponds to power-law decay for all s, and hence we differ from Schulz and Ziman, who claim the out-of-plane correlation function decays exponentially for s〉1/2. For the in-plane correlation function, the spectral gap method again agrees with the exact result ηx=0.5 for s=1/2. The consensus of this and other numerical methods for s=1 gives a value ηx(approximately-equal-to)0.20, considerably different from the case of s=1/2. Hence it is tempting to conjecture that ηx is s dependent, implying that XY models belong to different universality classes for different s. However, a finite-size study of the conformal anomaly produces the result that c=1, independent of s. This situation is further discussed.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been prepared on SrTiO3 and LaAlO3 substrates by a high-pressure planar dc-sputtering technique. By covering the substrate heater with a frame of polycrystalline YBa2Cu3O7 substantial improvements of the YBa2Cu3O7 film properties were achieved. These are characterized by dc-resistivity values ρ(T) of less than 50 μΩ cm at 100 K and ρ(300 K)/ρ(100 K) values of up to 3.9. Significant deviations from the usual linear ρ(T) behavior were found. Critical temperatures above 90 K, resistive transition widths down to 0.3 K, and critical current densities of about 5 × 106 A/cm2 at 77 K confirm the high quality of the films. As indicated by Rutherford backscattering and high-resolution transmission electron microscopy the films exhibit a microstructure characterized by a reduced density of lattice defects. However, lattice-coherent precipitates with a diameter of about 5–10 nm were observed. As an outstanding feature the films exhibit, besides the initial steep falloff at Tc, a further gradual decrease of the microwave surface resistance at 87 GHz below 50 K by at least one order of magnitude. These results are very promising for millimeter-wave applications of epitaxial YBa2Cu3O7 thin films.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3860-3864 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for the preparation of nominally undoped semi-insulating (SI) InP wafers by annealing under controlled phosphorus pressure are described. It is demonstrated by the results of electrical profile measurements (differential Hall effect) and by photoluminescence that diffusion effects in a thin peripheral layer (≈20 μm) can be correlated to a phosphorus in- and indium out-diffusion. But diffusion of these species is correlated to a donor behavior and relatively slow. It can, therefore, not be used to explain the SI bulk property which seems not to depend on the phosphorus overpressure during annealing.
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in liquid-encapsulation Czochralski (LEC) grown p-type InP:Fe codoped with Zn have been investigated by means of temperature-dependent Hall-effect (TDH), deep-level transient spectroscopy (DLTS), calorimetric absorption spectroscopy, and electron spin resonance measurements. Although a dominant deep hole trap is revealed both by DLTS and TDH measurements in the vicinity of the valence band edge at EV+0.2 eV, the spectroscopic analysis unambiguously invalidates previous speculations on the existence of a second energy level of the isolated iron impurity in the band gap of InP, i.e., a Fe4+/Fe3+ donor level. From the axial concentration profile and a comparison with a LEC-grown p-type InP crystal doped with Zn only it seems that the trap is not even iron-related in contrast to tentative assignments often found in the literature. Native or Zn-related defects which depend on the particular growth conditions used are assumed to account for this level.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3490-3497 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports results of an experiment involving two-laser resonance-enhanced photoionization of benzene. The excitation sources were two frequency-doubled dye lasers. The first laser pumped the molecule to a selected vibronic level of its first excited singlet state (1B2u), from where it was ionized by a time-delayed pulse of the second laser. The ion yield depends on the intermediate vibronic state as well as on the wavelength of the ionizing laser. From the structures and intensities of the measured ion spectra we derived vibrational frequencies and molecular parameters of the ground electronic state of the ion to a remarkable accuracy. The contributions of autoionizing Rydberg levels to the ionization cross section can clearly be distinguished from direct ionization. Several resonance peaks were assigned to transitions to vibrational modes within these Rydberg states.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6523-6529 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an application of the spall technique for studying the strength, homogeneity, and adhesion of plasma sprayed coatings on a metal substrate. We used a flyer plate impact and a pulsed high-power proton beam to generate short, intense pressure pulses. To study adhesion it is necessary to provide a spall fracture at the interface. This was realized due to the bell-shaped power profile in the ion beam cross section. As a result, the spall fracture inside the samples occurred in tests with the ion beam, at different distances from the surface, including the interface between the coating and the substrate. Using a line-imaging laser-Doppler velocimeter, we were able to measure the free surface velocity histories for a range of load parameters in each experiment. The results of the measurements demonstrate the great influence of annealing on the homogeneity and strength of the coating and a lesser influence of the substrate temperature at coating on the adhesion. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6947-6950 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The presence and evolution of traps in undoped semi-insulating (SI) InP obtained by high temperature annealing (900 °C for 90 h) in poor or rich phosphorus atmosphere has been studied by means of photoinduced current transient spectroscopy. Six traps named A1 to A6 having activation energies ranging from 0.2 to 0.6 eV have been detected in three samples submitted to the same annealing process. The samples differ in the Fe concentration of the starting material and the applied phosphorus pressure in the annealing process. A comparison of the corresponding photoinduced current transient spectroscopy spectra shows that among the observed traps, the 0.2 eV one can be related to a phosphorus deficiency, and the 0.3 eV and 0.4 eV traps could be due to an excess of phosphorus during annealing. Moreover, the trap corresponding to iron (0.6 eV) has been observed in all the studied samples. © 1996 American Institute of Physics.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of pure, nonhydrogenated amorphous silicon (a-Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a-Si were probed by measuring the photocarrier lifetime τ at low carrier densities (1018/cm3) with subpicosecond resolution using pump-probe reflectivity measurements. The average cross section of defect-related midgap states for free-carrier capture is found to be 6×10−16 cm2. In addition, the average bond-angle distortion Δθ in a-Si was derived from Raman spectroscopy. Annealing as-implanted a-Si for 1 h at T≤500 °C induces defect annihilation as well as network relaxation. In contrast, 32 ns pulsed laser heating of a-Si just below the melting threshold leads to relaxation of Δθ without significant defect annihilation. This annealing behavior can be understood on the basis of defect diffusion kinetics. Implanting fully relaxed a-Si with 1 MeV B+, Si+, and Xe+ up to damage levels of 0.004 displacements per atom raises the defect density without affecting Δθ. Only after the defect density has saturated at higher damage levels is Δθ returned to the as-implanted level. The electronic density of states of a-Si is determined using optical-absorption spectroscopy, yielding Nsat≈0.5 at. % for the saturation defect density in a-Si at room temperature. Electron paramagnetic resonance shows that a minor fraction (0.02 at. %) of these defects is spin active. The response of c-Si and relaxed a-Si to implantation damage is comparable, suggesting that the defect populations in both materials are similar. Comparing carrier lifetime measurements and Raman spectroscopy for the various experimental treatments demonstrates that there is no unique correlation between the defect density and Δθ in a-Si. Assuming that defects and Δθ have independent enthalpic contributions, the Gibbs free energy of various structural states of a-Si is calculated. These calculations indicate that the melting temperature of a-Si may vary from 1010 to 1490 K.
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The increase in the microwave surface resistance Rs of high Tc superconductors at elevated microwave power levels is reported for both oriented and unoriented Tl-based films as a function of rf magnetic field at 820 MHz and 18 GHz. The application of dc magnetic fields produces qualitatively similar increases in Rs and in the surface reactance Xs. The increase in Rs with dc field is shown to arise from simple decoupling of grains by intergranular magnetic flux. The increase in Rs with microwave power, on the other hand, is a consequence of hysteretic intergranular processes.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2231-2233 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate experimentally that the far-infrared photoresponse of GaAs/AlGaAs heterostructures at photon energies corresponding to cyclotron resonance absorption is strongly enhanced in the adiabatic transport regime of the quantum Hall effect (QHE). Ideal adiabatic transport is characterized within the edge channel picture of the QHE by the absence of interedge channel scattering. We realize adiabatic transport by the means of a multiple gate finger structure, which is used for a selective population of the edge channels. The cyclotron resonance absorption is interpreted as an additional interchannel scattering process increasing the magnetoresistance.
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