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  • American Institute of Physics (AIP)  (11)
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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 620-629 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Concentrated aqueous solutions of three transition metal bromides (ZnBr2, CuBr2, and NiBr2) and an alkali bromide (RbBr) have been studied with differential anomalous scattering (DAS) and extended x-ray absorption fine structure (EXAFS). The aq-ZnBr2 solutions exhibit considerable inner-shell ion complexing with the formation of tetrahedral complexes about the Zn2+. In aq-CuBr2, the Cu2+ has an octahedral coordination shell. Most of the anions are bound directly to the cations in both solutions. In contrast, there are only a few Ni–Br nearest neighbors in aq-NiBr2. Instead, cations and anions share hydrating water molecules. Preliminary data show that any ion complexing in aq-RbBr must be weak. These results are in good agreement with published thermodynamic studies.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 613-619 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Anomalous scattering data from 1-GeBr4 are compared with theoretical predictions and with several models. Published hard-sphere RISM calculations of the pair correlation functions accurately predict the features of the experimental distribution functions, but discrepancies between theory and experiment are larger than the experimental uncertainty. New calculations with more realistic potentials are needed. The total structure factor of 1-GeBr4 contains a prepeak which is due largely, but not exclusively, to correlations between molecular centers (i.e., germanium atoms). Modeling results indicate that there is strong interlocking of molecules in the liquid and that the Br–Br structure factor is largely determined by the packing of the halogen atoms with the germanium atoms effectively fitting in tetrahedral interstices. Models based on the monoclinic crystal of SnBr4 agree better with the liquid data than models based on the cubic crystal of c-GeBr4, suggesting that GeBr4 undergoes a change in short-range molecular packing on melting.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 604-612 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This study tested the accuracy of the anomalous x-ray scattering technique as part of an investigation of the molecular liquid GeBr4. The differential anomalous scattering technique proved to be quite accurate, giving nearest-neighbor coordination distances and numbers correct to 0.02 A(ring) and 4%, respectively, as compared with known values. The high accuracy of the approach evidently depends on a cancellation of systematic errors when subtracting data sets at two nearby photon energies. The straightforward three-wavelength approach to determining the partial-distribution functions is quite ill conditioned and small experimental errors cause large errors in the resulting partial distribution functions. An alternate procedure, suggested by Munro, uses differences to determine the partial distribution functions (PDF's) and hence takes advantage of the cancellation of systematic errors. This approach yields Br–Br, Ge–Br, and Ge–Ge PDF's with error levels of approximately 5%–10%, 30%, and 100%, respectively. Singular value decomposition of the weighting matrix can be used to predict the relative accuracies of the three PDF's before experimentation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1004-1006 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN/Al0.20Ga0.80N (50 Å/50 Å) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the bottom contact layer and n-Al0.25Ga0.75N as the corresponding cladding layer. The crystal structure of this system was investigated by studying the reciprocal lattice map of off-axis diffraction peaks as well as the θ–2θ pattern around the (0002) reflection. The MQW was found to be coherent and has the a-lattice parameter of the underlying Al0.25Ga0.75N. The good agreement between experimental and theoretical data in the relative intensity of up to third-order satellite peaks supports that the interfaces of the MQW are abrupt, and thus, interdiffusion of Ga and Al atoms at the growth temperature was negligible. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4430-4437 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of GaN films grown by electron-cyclotron-resonance-assisted molecular beam epitaxy on Si(111), Si(001), basal-plane sapphire, a-plane sapphire, and r-plane sapphire substrates was studied with four-circle x-ray diffractometry. Phase content, domain size, inhomogeneous strain, and in-plane and out-of-plane domain misorientations were measured and compared for films grown on each type of substrate. Wurtzite and zinc blende polymorphs were found to coexist in films grown on Si(111). The two structures grow in the (0002) and (111) orientations, respectively, so that they may transform into each other via stacking faults on close-packed planes. Smaller amounts of zinc blende material were also found in predominately (0002) wurtzitic films on a-plane sapphire and (112¯0) wurtzitic films on r-plane sapphire.
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Time-resolved x-ray scattering studies of phase transition kinetics have been carried out using the wide-bandpass monochromator and fast linear position-sensitive detector system at the IBM/MIT beamline X-20C at the National Synchrotron Light Source (NSLS). We report here on the instrumentation that has been developed for these studies, and in particular on the methods used to measure, change, and control sample temperature with millisecond resolution.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 463-465 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum gallium nitride alloys were grown by molecular beam epitaxy and their film composition, structure, and microstructure were investigated by Rutherford backscattering spectroscopy, atomic force microscopy, x-ray diffraction, and transmission electron microscopy. It was found that the ratio of group-III to group-V fluxes influences the relative incorporation of gallium and aluminum in the films. The transmission electron microscopy and x-ray diffraction studies revealed the existence of three types of spontaneously formed superlattice structures with periodicities of 2, 7, and 12 ML. While the 2 ML ordering is preferred under group-V rich conditions of growth, the 7 and 12 ML orderings were observed under group-III rich conditions of growth. © 2001 American Institute of Physics.
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of titanium silicide from the C49 to the C54 structure was studied using x-ray diffraction of samples containing arrays of narrow lines of preformed C49 TiSi2. Using a synchrotron x-ray source, diffraction patterns were collected at 1.5–2 °C intervals during sample heating at rates of 3 or 20 °C/s to temperatures of 1000–1100 °C. The results show a monotonic increase in the C54 transition temperature by as much as 180 °C with a decreasing linewidth from 1.0 to 0.1 μm. Also observed is a monotonic increase in (040) preferred orientation of the C54 phase with decreasing linewidth. The results demonstrate the power of in situ x-ray diffraction of narrow line arrays as a tool to study finite size effects in thin-film reactions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality films of YBa2Cu3O7−δ on LaAlO3 have been grown by pulsed-laser deposition at oxygen pressures of 3.4–54 Pa (25–400 mTorr). X-ray diffraction reveals the coexistence of grains that align with the substrate axes (axial grains) and grains that are rotated by 0.4° from the substrate axes (diagonal grains). The axial grains are tetragonal while the diagonal grains achieve lattice parameters close to bulk YBa2Cu3O7. The relative proportion of axial grains accounts for the measured variations of normal-state conductance and superconducting critical current density from film to film, based on a simple two-dimensional model of randomly positioned, insulating axial grains. © 1994 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 72-74 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first observation of atomic long range ordering in AlxGa1−xN thin films grown by electron cyclotron resonance assisted molecular beam epitaxy on sapphire and 6H-SiC substrates is reported. The phenomenon was investigated by studying the superlattice peaks (0001), (0003), and (0005) using x-ray diffraction. The relative intensity of these peaks was found to be largest for Al content in the 30%–50% range in qualitative agreement with expectations for an ordered structure of ideal Al0.5Ga0.5N stoichiometry. The average size of the ordered domains in the films was found to be within a factor of 4 of the films' thicknesses. The degree of ordering depends on the III/V flux ratio and exhibits a weaker dependence on Si doping. © 1997 American Institute of Physics.
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