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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 5925-5933 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The polarized absorption spectra of oriented films of phase-I and phase-II poly(di-n-hexylsilane), PDHS, have been determined in the visible/UV and in the near-edge regions of the C 1s and Si 1s x-ray ionization potentials. The phase-I absorption band at 360 nm is strongly polarized parallel to the direction of the Si chain, whereas the analog of this band in phase II (317 nm) is only weakly polarized in the same direction; this is consistent with partial trans→gauche isomerization of the Si chain in phase II and delocalization of the excitation in part onto disordered n-hexyl groups. Polarized absorption in the vicinity of the Si 1s ionization limit reveals strong polarization of the discrete and continuum transitions in both phase I and phase II, whereas the equivalent spectra taken in the vicinity of the C 1s limit show strong polarization in phase I but little or no polarization in phase II. The x-ray spectra are interpreted as showing that the Si chain and the n-hexyl groups of the polymer are ordered in phase I and are essentially perpendicular to one another, whereas in phase II the n-hexyl chains are disordered while the Si backbone remains relatively fixed in space. The Si 1s electron-yield spectra also display EXAFS interferences which have been transformed to yield Si–Si and Si–C distances in the polymer of 2.37±0.02 and 1.81±0.03 A(ring), respectively. The various discrete and continuum transitions are assigned according to an orbital model, and the visible/UV thermochromism earlier reported for PDHS is now observed in the Si 1s x-ray near-edge spectrum as well.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2843-2853 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structure and morphology of the useful high-temperature/high-strength polymer polyaryletherketone (PEEK) by transmission electron microscopy and three-dimensional electron diffraction after finding suitable solvents (α-chloronaphthalene and benzophenone) that allowed casting of the required ultrathin polymer films. When crystallized from the melt, PEEK grows in the form of spherulites consisting of narrow lamellae and having the b axis of the unit cell radial. Additionally, at high temperatures in these ultrathin films, the spherulites attain an extraordinary cylindrical symmetry as a result of growth of their lamellae on edge, with the c crystallographic direction parallel to the film plane and the a direction corresponding to the cylinder axis. Reasons for this mode of growth are attributed to the highly anisometric molecular cross section normal to the chain direction, which favors crystal nucleation on the substrate with the bc plane. At lower temperatures during crystallization from the melt, a more random lamellar disposition is seen in these thin-film spherulites, although lamellae on edge still predominate. Crystallization by heating from the quenched glassy phase yields random lamellar aggregates and small spherulites. The glassy phase in ultrathin PEEK shows no consistent morphological features down to a level of resolution of 1.0 nm. Scanning electron microscopic examination of the free surfaces of bulk samples crystallized under controlled conditions both from the melt and from the glass, show that our findings from ultrathin films (with the exception of the quasicylindrical spherulitic substructure) also apply to these thicker specimens.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through gate-modulated electrochemical doping, ambipolar operation in thin-film transistors (TFTs) can be realized in air with solution processable conjugated polymers. Unlike other typical organic TFTs, which rely on high crystallinity for better charge transport, these electrochemically-doped transistors operate under a different mechanism and show very high current output even with completely amorphous polymers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2229-2231 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that organic thin-film transistors have suitable properties for use in gas sensors. Such sensors possess sensitivity and reproducibility in recognizing a range of gaseous analytes. A wealth of opportunities for chemical recognition arise from the variety of mechanisms associated with different semiconductor–analyte interactions, the ability to vary the chemical constitution of the semiconductor end/side groups, and also the nature of the thin-film morphology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3066-3068 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic field-effect transistors that employ copper phthalocyanine (Cu–Pc) as the semiconducting layer can function as p-channel accumulation-mode devices. The charge carrier mobility of such devices is strongly dependent on the morphology of the semiconducting thin film. When the substrate temperature for deposition of Cu–Pc is 125 °C, a mobility of 0.02 cm2/V s and on/off ratio of 4×105 can be obtained. These features along with the highly stable chemical nature of Cu–Pc make it an attractive candidate for device applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6804-6808 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin polycrystalline films of perylenetetracarboxylic dianyhydride (PTCDA), an organic molecular solid, exhibits substantial anisotropies in its electronic transport properties. Only electrons transport in the directions along molecular planes, while mainly holes transport in the direction normal to molecular planes. A series of measurements on both field effect transistors with PTCDA active layers and light emitting diodes with PTCDA transport layers documents the anisotropy seen in the electronic transport in thin films of PTCDA. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4108-4110 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of field-effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed. We demonstrate that both high field-effect mobilities (ca. 0.045 cm2/V s in the accumulation mode and 0.01 cm2/V s in the depletion mode), and relatively high on/off current ratios (greater than 103) can be achieved. We find that the film quality and field-effect mobility are strongly dependent on the choice of solvents. In addition, treating a film with ammonia or heating to 100 °C under N2 can increase the on/off ratio without decreasing the mobility. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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