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  • 1
    Electronic Resource
    Electronic Resource
    The coupling mode between Kelvin–Helmholtz and resistive instabilities in compressible plasmas (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2883-2886 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a compressible magnetohydrodynamics (MHD) simulation method, the coupling mode between Kelvin–Helmholtz (K–H) and resistive instabilities has been investigated. It is found that, in compressible plasmas, the coupling mode can take place in a limited range of ambient shear flow velocity, beyond which the coupling mode is stabilized. The flow shear can significantly enhance the growth of the coupling mode. Only in a narrow range of plasma beta, could the coupling mode occur. It is deduced that this kind of coupling mode may appear at Earth's magnetopause. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873245
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  • 2
    Electronic Resource
    Electronic Resource
    Transient reconnection caused by the impact and switch-off of a transverse shear flow (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2393-2400 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is supposed that local and transient reconnection in the plasma boundary layer can be caused by the impact and switch-off of a single directional transverse shear flow. MHD (magnetohydrodynamic) simulation is used to investigate the reconnection processes in the two cases. It is found that if the inflow is homogeneous, it does not cause reconnection; if the inflow is shearing flow, no matter how great the shear of the flow is, it may cause reconnection either during impacting period or after stop impacting. It is pointed out that the sudden stop of external force may be an important triggering mechanism of energy transformation and reconnection in the plasma boundary layer region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873510
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  • 3
    Electronic Resource
    Electronic Resource
    Shocks associated with the Kelvin–Helmholtz-resistive instability (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 2842-2848 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, a new type of shock associated with magnetic reconnection processes has been explored using a compressible magnetohydrodynamics simulation method. The simulations have shown that, when there are strong field-aligned shear flows at the two sides of a current sheet, the coupling mode between Kelvin–Helmholtz and resistive instabilities will appear; further, reflected shocks and incident shocks can be produced at both sides of the boundary layer. Both the reflected shocks and incident shocks are fast shocks, through which the magnetic field strength, density, and temperature all increase sharply, while the plasma velocity decreases steeply. It is expected that some inhomogeneous structures can be formed at plasma boundary layer regions due to the existence of fast field-aligned shear flow driven shocks. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.874133
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  • 4
    Electronic Resource
    Electronic Resource
    Scaling behavior of virgin magnetization curve of DyBa2Cu3Oy crystal prepared by melt-textured growth method (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1329-1330 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization curves of a DyBa2Cu3Oy crystal prepared by the melt-textured growth method were measured from 10 to 85 K with the magnetic field parallel to the c axis. The scaling behavior of the virgin magnetization curves is observed and explained in terms of an extended Bean model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357796
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  • 5
    Electronic Resource
    Electronic Resource
    Properties of the tearing mode in periodic current sheets (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2466-2468 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tearing mode in multiple periodic current sheet systems with a hyperbolic tangent profile of magnetic shear has been investigated. It is found that the linear growth rate of the antisymmetric and symmetric mode tearing instability increases and decreases, respectively, with the current sheet separation decreasing, which is similar to the situation with the step function profile of current density [A. Otto and G. T. Birk, Phys Fluids B 4, 3811 (1992)]. But, the results here also show that the linear growth rate of the antisymmetric mode tearing instability maximizes at certain current sheet separation. The linear growth of the tearing instability in multiple current sheet systems is not enhanced as greatly as has usually been expected. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872923
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  • 6
    Electronic Resource
    Electronic Resource
    Tearing mode with strong flow shear in the viscosity-dominated limit (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 4301-4303 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a standard boundary layer approach, the tearing mode with shear flow comparable with shear magnetic field and fluid viscosity much larger than resistivity has been studied analytically. The results show that, the growth rate in this case scales as ν2/3ν, where νν is the normalized viscosity, in agreement with the numerical results of Einaudi and Rubini [Phys. Fluids B 1, 2224 (1989)]. It is found analytically that large viscosity may have a destabilizing effect on the instability. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872045
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  • 7
    Electronic Resource
    Electronic Resource
    Pressure and temperature effects on optical transitions in cubic GaN (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 929-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pressure and temperature effects on optical transitions in cubic GaN grown on a GaAs substrate have been studied by photoluminescence (PL) spectroscopy at hydrostatic pressures up to 9 GPa (10 K) and as a function of temperature (10–300 K) at ambient pressure. The dominant emissions at 10 K and ambient pressure are assigned to the bound-exciton transition (zero-phonon line), the donor-acceptor-pair (DAP) emission, and, tentatively, to the first three LO-phonon replicas of the bound exciton. These PL features shift to higher energy with increasing pressure. The pressure coefficients indicate that the observed recombination processes involve states which are closely related to the band edges. Temperature-induced evolutions from bound to free-exciton (FE) transition and DAP emission to free-to-bound transition are resolved. The binding energies of the FE and donor and acceptor levels in cubic GaN have been determined from the temperature and power-density dependence of the PL emission energies. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370826
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  • 8
    Electronic Resource
    Electronic Resource
    Structural stability and electrical properties of Sr2FeMoO6 under high pressure (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1942-1944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural stability and electrical properties of Sr2FeMoO6 under high pressure at room temperature have been studied using energy dispersive x-ray diffraction with synchrotron radiation and resistance and capacitance measurements. The x-ray diffraction results show that the structure of Sr2FeMoO6 remains stable up to 40 GPa. The equation of state of Sr2FeMoO6 is obtained from the V/V0–P relationship. The bulk modulus B0 and its first-order derivative B0′ of Sr2FeMoO6 were calculated based on the Birch–Murnaghan equation. The electrical resistance undergoes a metallic transition at about 2.1 GPa. The metallic transition may be caused by a change in the electronic structure induced by high pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496119
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic and transport behaviors of La0.5(Sr0.53Ca0.47)0.5MnO3 under pressure, magnetic field, and Fe doping (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3139-3144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of pressure, magnetic field, and Mn-site doping on the magnetic structure and resistive behavior of La0.5(Sr0.53Ca0.47)0.5Mn1−xFexO3 (0≤x≤0.10) have been experimentally studied. The system experiences two magnetic transitions subsequently with decreasing temperature: a paramagnetic to ferromagnetic transition and a ferromagnetic to antiferromagnetic (AFM) transition. The second magnetic transition coincides with a steep resistivity jump. In addition to reducing the critical temperature for the AFM transition (TN), the incorporation of Fe enhances the ferromagnetic order below TN as demonstrated by the gradual increase of magnetization with the content of Fe. Long-range AFM order is replaced by short-range AFM order when x exceeds 0.03, and disappears completely for x〉0.06. The application of pressure or magnetic field depresses the AFM nature of the compounds, resulting in a downward shift of TN at a rate of ∼7 K/GPa or ∼4 K/T. The most interesting observation of the present study is the greatly enhanced resistivity jump at TN, which increase from 1 to 2 orders, after the sample undergoes a pressurizing and then a pressure relieving process. Although high pressure, magnetic field, and Fe doping produce similar effects on the AFM order, the underlying physics is different. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446228
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  • 10
    Electronic Resource
    Electronic Resource
    Flux dependence of oxygen-beam-induced ripple growth on silicon (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4334-4336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of flux on the growth of ripples on Si(111) under bombardment of oblique, 1 keV O2+ beams was investigated. We found that a low flux leads to a significantly higher ripple growth rate per ion than a high flux. This effect is attributed to a reduction in the viscous flow of the amorphized material. At low fluxes, the viscous flow is reduced because there is more thermal annealing of the radiation damage. Current models of surface roughening remain valid if the flux dependence of the viscous flow is taken into account. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428414
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