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  • 1
    Electronic Resource
    Electronic Resource
    Sub-100-nm p+-n shallow junctions fabricated by group III dual ion implantation and rapid thermal annealing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1790-1792 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication of p+-n junctions with depth less than 100 nm using dual ion implantation of group III species (69Ga, 115In, 11B, 49BF2) in various combinations is reported. We have investigated both the single use of heavy group III (Ga and In) ions for creating shallow junctions and the dual implant approach where Ga or In was first used for preamorphization (and doping) followed by a B or BF2 implant. The optimum cases for sub-100-nm shallow junction formation among the group III combinations evaluated are Ga/B dual ion implantation followed by low-temperature (550–600 °C) rapid thermal annealing (RTA) for 15–30 s and In/B(B or BF2) dual ion implantation with higher temperature (900–1000 °C) RTA for 10 s. Junction depths of 60–100 nm and sheet resistances of 150–300 Ω/(D'Alembertian) were obtained. Shallow junction diodes fabricated by this dual ion implant technology exhibit low leakage current densities of 8–30 nA/cm2 and good ideality factors of 1.01–1.05.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101491
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  • 2
    Electronic Resource
    Electronic Resource
    Velocity measurements of the laminar flow through a rotating straight pipe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 1972-1982 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some measurements have been obtained for the axial velocity of the fully developed laminar flow in a circular straight pipe with radius a, which is rotating with constant angular speed Ω about an axis perpendicular to its own axis. A diode laser LDA system was mounted together with a circulating pipe flow system on a rotating table for the experiment. According to previous analyses and calculations, there exist four types of axial velocity distributions that result from the various effects of the secondary flow on the main stream via the convection and Coriolis effect for different values of R( = wm'a/ν) and RΩ(=Ωa2/ν), where wm' is the mean axial velocity and ν is the kinematic viscosity of the fluid. The present study provides experimental validation for the previous theoretical and numerical analyses. Experiments have also been carried out for studying the asymptotic nature of the slow flow in a rapidly rotating pipe (RΩ(very-much-greater-than)1 and RΩ(very-much-greater-than)R) and the rapid flow in a slowly rotating pipe (RRΩ(very-much-greater-than)1 and R(very-much-greater-than)RΩ).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.868204
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  • 3
    Electronic Resource
    Electronic Resource
    Si p+-n shallow junction fabrication using on-axis Ga+ implantation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2049-2051 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p+-n shallow junction fabrication using on-axis Ga implantation into crystalline and preamorphized Si, in conjuction with rapid thermal annealing, is reported. The implants are performed at energies of 50 and 75 keV for doses of 1 and 3.5×1015/cm2. Taking advantage of the short Ga projection range, low critical dosage (2×1014/cm2) needed for amorphizing the implanted layer, and a low anneal temperature (550–600 °C) required to induce solid phase epitaxial regrowth and activate the Ga dopants in excess of its maximum solid solubility in Si, a shallow junction at a depth of 100 nm and with sheet resistance of 150 Ω/(D'Alembertian) was obtained using 75 keV Ga implantation at a dose of 1×1015/cm2. The sheet resistance of the Ga-implanted layer can be optimized by adjusting the anneal temperature and time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99577
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