ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • American Institute of Physics (AIP)  (7)
Collection
Publisher
Years
  • 1
    Electronic Resource
    Electronic Resource
    Characterization of Si/Si1−xGex/Si quantum wells by cathodoluminescence imaging and spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 607-609 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) imaging and spectroscopy have been used to characterize fully strained SiGe quantum wells grown on Si. At T≈5 K, the CL spectra contain only band edge luminescence features. Monochromatic imaging with the no-phonon line attributed to the bound excitons in the quantum well, has shown that the distribution of the luminescence from the wells is not uniform. The thinnest well (33 A(ring)) contained a low density of nonradiative (luminescence reduction up to 100%) spots 40–100 μm in size. The thickest well (500 A(ring)) contained similar nonradiative spots and also dark line features oriented along the 〈110〉 directions. These dark line features are areas of nonradiative recombination (up to 70%) and have been identified by transmission electron microscopy as misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111064
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Characterization of compositionally graded Si1−xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1952-1956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) spectroscopy, cathodoluminescence (CL) spectroscopy and imaging, and preferential defect etching and optical microscopy have been used to characterize compositionally graded Si1−xGex alloy layers grown by molecular beam epitaxy. Si1−xGex capping layers grown on the compositionally graded layers have low threading dislocation densities, and both PL and low-beam energy CL spectra show bound exciton luminescence features identical with those observed in bulk Si1−xGex alloys and relatively weak dislocation related D-band features. Increasing the beam energy increases the relative strength of the D bands in the CL spectra, indicating that they are associated with the misfit dislocations in the compositionally graded layer. This has been confirmed by combined chemical etching and PL spectroscopy measurements. The misfit dislocations can be observed by monochromatic CL imaging at a high-beam energy using a narrow band pass filter centerd on the D4 band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353185
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Solubility of hydrogen in silicon at 1300 °C (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1612-1614 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of hydrogen in boron doped Czochralski silicon heated to 1300 °C in H2 gas has been studied. The anneal was terminated by a rapid quench to room temperature giving rise to an unknown hydrogen-related defect as well as H-B close pairs. All the hydrogen in the crystal can be driven into such pairs by a low temperature (200 °C) anneal, after which the values of [H-B] [D-B] are in agreement with the total deuterium concentration, measured by secondary ion mass spectrometry. The estimated solubility of 1.5×1016 cm−3 is not affected by the isotopic mass of the hydrogen nor by the presence of boron or oxygen impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108602
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Cathodoluminescence imaging and spectroscopy of dislocations in Si and Si1−xGex alloys (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1087-1089 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations in float-zone Si which has been plastically deformed and deliberately copper contaminated, and misfit dislocations in a relaxed Si1−xGex alloy layer grown on a Si substrate by molecular beam epitaxy, have been investigated by monochromatic and panchromatic cathodoluminescence imaging and by cathodoluminescence spectroscopy. The measurements show that the D3 and D4 luminescence features originate on the slip lines in plastically deformed Si and at the misfit dislocations in the Si1−xGex alloy layer whereas the D1 and D2 bands are dominant between the slip lines and the misfit dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107676
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2933-2935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped Czochralski silicon samples with [B]∼1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104726
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2579-2581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements have been made on Si/Ge short period superlattice structures grown on a SiGe alloy buffer layer and on a similar SiGe alloy layer without a superlattice. Using an InSb detector with a low energy cutoff at ∼450 meV, the major luminescence features observed were two broad bands with maximum intensities at ∼530 and ∼720 meV. The luminescence intensity was found to vary with the superlattice composition but was substantially stronger for the SiGe alloy layer without a superlattice. We ascribe these luminescence features to defects in the SiGe alloy layers. This is supported by the observation that the introduction of deliberate copper contamination at 600 °C dramatically increases the photoluminescence signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105908
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characterization of SiGe quantum wire structures by cathodoluminescence imaging and spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe quantum wire (QWR) structures grown by gas source molecular beam epitaxy have been characterized by cathodoluminescence (CL) imaging and spectroscopy. At T≈5 K, the CL spectra obtained with a focused beam contain SiGe luminescence features associated with electron-hole plasma recombination. When the electron beam is defocused three separate SiGe no-phonon luminescence features and their transverse optic phonon replicas are observed. These features are related to recombination in the SiGe (100) quantum wells (QWs), SiGe (111) QWs, and the SiGe QWRs. The high generation rates associated with the focused electron beam quenches the luminescence and results in electron-hole plasma recombination in the adjacent SiGe (100) QWs, and saturation of the radiative processes. Defocusing the electron beam reduces the injection level and nonradiative processes, enabling the SiGe bound exciton features to be observed. Monochromatic CL imaging of the SiGe (100) QWs show that at low temperatures the CL image is broadened by exciton diffusion and becomes sharper at higher temperatures (T=50–70 K) reflecting nonexcitonic recombination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115024
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...