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  • 1
    Digitale Medien
    Digitale Medien
    Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3765-3767 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence (PL) properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. The epilayers were grown on GaAs (001) by radio-frequency molecular-beam epitaxy. It was found that when the carrier concentration is increased from 5×1015 to 2×1018 cm−3, the PL peak shifted towards low energy, from 3.246 to 3.227 eV, and the PL linewidth increased from 77.1 to 121 meV. The PL peak shift is explained by the band gap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126774
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    Structural transition of partially Ba-filled thermoelectric CoSb3 investigated by positron annihilation spectroscopy (2015)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2015-02-03
    Beschreibung: Microstructure of unfilled and Ba-filled CoSb 3 has been studied by positron lifetime measurements together with theoretical calculation. Positron trapping in intrinsic voids is observed in the CoSb 3 , which contributes a positron lifetime of 263 ± 2 ps. After filling Ba atoms with content up to x  = 0.4, the positron lifetime shows continuous increase. By comparing the experimental results with calculation following the phase diagram of Ba x Co 4 Sb 12 with x in the range of 0–0.5, it is found that when the Ba content is lower than 0.16, the filling of Ba atoms is in a phase of solid solution. At x  = 0.2, γ phase is formed, which is mixed with solid solution. At x  〉 0.25, transition from γ phase to a mixture of γ and α phases is confirmed.
    Print ISSN: 0021-8979
    Digitale ISSN: 1089-7550
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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    Photocurrent spectrum study of a quantum dot single-photon detector based on resonant tunneling effect with near-infrared response (2014)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2014-07-24
    Beschreibung: We present the photocurrent spectrum study of a quantum dot (QD) single-photon detector using a reset technique which eliminates the QD's “memory effect.” By applying a proper reset frequency and keeping the detector in linear-response region, the detector's responses to different monochromatic light are resolved which reflects different detection efficiencies. We find the reset photocurrent tails up to 1.3  μ m wavelength and near-infrared (∼1100 nm) single-photon sensitivity is demonstrated due to interband transition of electrons in QDs, indicating the device a promising candidate both in quantum information applications and highly sensitive imaging applications operating in relative high temperatures (〉80 K).
    Print ISSN: 0003-6951
    Digitale ISSN: 1077-3118
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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    Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam (2015)
    American Institute of Physics (AIP)
    Details
    Publikationsdatum: 2015-02-26
    Beschreibung: Wurtzite GaN films grown by hydride vapor phase epitaxy were implanted with 280 keV C + ions to a dose of 6 × 10 16  cm −2 . Vacancy-type defects in C + -implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter to a high value of 1.08–1.09 after implantation indicates introduction of very large vacancy clusters. Post-implantation annealing at temperatures up to 800 °C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000 °C. The other measurements such as X-ray diffraction, Raman scattering and Photoluminescence all indicate severe damage and even disordered structure induced by C + -implantation. The disordered lattice shows a partial recovery after annealing above 800 °C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C + -implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.
    Print ISSN: 0021-8979
    Digitale ISSN: 1089-7550
    Thema: Physik
    Publiziert von American Institute of Physics (AIP)
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