Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2937-2939
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126522
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