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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 5794-5803 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The temperature dependence of the foreign gas relaxation of hydrogen cyanide, one of the best candidate for radioastronomical observations in planetary atmospheres, is investigated in the 135–300 K range. The measurement process exploits the delayed nutation phenomenon which leads to the determination of the population relaxation. This coherent transient technique avoids any deconvolution of the Doppler effect and a novel pulse sequence which alleviates the difficulties related to the finite saturation actually achieved is proposed. The great sensitivity of the method requires active gas pressures ((approximately-less-than)10−4 Torr) much lower than in linewidth techniques, and thus results in an extension by about 60 K of the lower bound of attained temperatures. The millimeter Stark spectrometer used, driven by a microprocessor system, is temperature controlled by a cold gaseous nitrogen flow; its careful design allows a strong reduction of thermal transpiration effects, and thus leads to proper pressure measurements for working pressures in the 10−3–10−2 Torr range. Measurements are made on the J=0→1 transition of HC15N with N2, H2, D2, Ar, and He as buffer gases. The usual T−n temperature dependence of relaxation rates is deduced, but departures are observed at temperatures lower than 160 K for the diatomic perturbers. By comparison with previously published works, neither isotopic nor vibrational dependences are observed, and population and coherence relaxation rates are similar. Experimental results are fairly reproduced by numerical calculations made in the frame of the Anderson–Tsao–Curnutte theory, which allows theoretical predictions for other HCN rotational lines of planetary interest.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6833-6839 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: About 136 transitions in the ν6 band of CH3Br have been measured using an infrared laser sideband spectrometer. The sidebands were generated by mixing the 10 μm radiation of a CO2 laser with the radiation of a tunable high power microwave source. Frequencies of transitions with J≤71 and K≤8 are reported. The accuracy of the measurements is estimated to be better than 10 MHz. Some high J rotational transitions in the v6=1 state have also been measured with a submillimeter-wave spectrometer. The new measurements have been combined with previous results to derive vibration–rotation parameters for the v6=1 state.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 5694-5701 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The v3=2 state of SF6 has been investigated using two independently tunable sidebands of a CO2 laser. An electro-optic modulator, based on microstrip concept, is excited by a wave in the range of 0–4 GHz to create a sideband resonant with the cold band transition used as pumping radiation. A second electro-optic modulator working in the 8–18 GHz range is used to monitor the disturbance in the 2ν3−ν3 band. About 250 lines of both the cold band ν3 and the hot band 2ν3–ν3 have been assigned on the basis of a calculated spectrum. Their frequencies have been determined with an accuracy better than 50 kHz. The spectrum is analyzed and the lines are fitted using an effective Hamiltonian developed through the sixth order for the ground state, the seventh order for the v3=1 state and the sixth order for the v3=2 state. The standard deviation is a few tens of kHz for ν3 lines and a few hundreds of kHz for 2ν3–ν3 lines. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 96-98 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present cross-sectional scanning tunneling microscopy images and scanning tunneling spectroscopy results of InAs quantum dots grown on GaAs. The samples contain 12 arrays of quantum dots. The analysis of the scanning tunneling microscope images reveals the self-alignment of the dots as well as the different dot interfaces with the under- and overgrown GaAs layers. We measure the strain distribution along the [001] direction in the (110) plane. The roughness of the dot interfaces along the [1¯10] direction is also estimated and local spectroscopy of the dots evidences the electronic confinement (measured gap of 1.25 eV compared with 0.4 eV for bulk InAs). © 1998 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 663-665 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of an external electric field on the fluorescence of the ferroelectric vinylidene fluoride-trifluoroethylene copolymer P(VDF-TrFE) doped by rhodamine is revealed. The fluorescence also shows anomalies in the region of the ferroelectric phase transition in P(VDF-TrFE). These phenomena are explained by the influence of polarization on the radiationless electron transitions in the dye molecules.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1099-1108 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the pulsed laser sputtering of (100)Ga1−xAlxAs (x=0.545) surface with 337 nm photons, starting from the threshold for particle emission (a few tens of mJ/cm2) up to about 300 mJ/cm2. Atoms and molecules sputtered from the irradiated surface are detected, their relative number measured, and their time of flight determined using laser resonant ionization mass spectrometry. After laser irradiation the surface is examined by scanning electron microscopy and electron microprobe analysis. From the shot number and the fluence dependencies of the sputtering yield, it is shown that two sputtering regimes exist. For low fluence (〈150 mJ/cm2), the sputtering results mainly from the absorption and excitation of defect sites. At higher fluences, the process is quite similar to thermal evaporation. One observes preferential emission of As in the form of As2 molecules and the correlated Ga and Al enrichment of the surface with formation of GaAl microsized structures. However, As preferential laser sputtering is rapidly counterbalanced by excess surface Ga and Al atoms leading to a stationary sputtering regime after a few thousand laser shots. A simple analytical model was developed which permits to define the conditions for such equilibrium achievement. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3411-3422 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the soft laser sputtering of (100)GaAs with 337 nm photons, starting from the threshold for particle emission (a few tens of mJ/cm2) to some 300 mJ/cm2 fluences. Atoms and molecules sputtered from the irradiated surface are detected, their relative number measured, and their time of flight determined using laser resonant ionization mass spectrometry. The surface after laser irradiation is examined by scanning electron microscopy and electron microprobe analysis.One observes a significant preferential emission of arsenic in the form of As2. This leads to the formation of perturbed Ga-rich surface structure which appears even at low fluence and after a few tens of laser shots on the same spot. This initial transformation seems to determine the further evolution of the irradiated surface. First, Ga atoms aggregate to form Ga islands on the surface; after a sufficient number of shots, micrometric structures are produced which finally behave as pure Ga metal. This evolution of the surface state after multipulse irradiation appears practically the same for low and medium laser fluences, the only difference being in the number of shots required to obtain the same microscopic structure. The velocity distribution of Ga atoms and As2 molecules is well fitted by half-space Maxwellian distributions. The kinetic temperatures are in broad agreement with the results obtained from a model of laser heating of the surface. The gross features of the experimental results can be interpreted from the particular thermodynamics properties of GaAs which exhibits very large As2 pressure above the solid as soon as the temperature exceeds 950 K. After a few laser shots, corresponding to particle emission from defect sites, the thermodynamics of GaAs appears to govern the further evolution of the laser-sputtered surface. Two sputtering regimes are evidenced: In the low-fluence regime (from threshold to 90 mJ/cm2) sputtering appears to be dominated by surface defect emission, whereas for higher fluences emission is more characteristic of thermal process accompanied by preferential sputtering of arsenide. According to these experimental results, a simple analytical model was developed which relates the quantitative surface to the quantitative sputtered cloud compositions. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4037-4044 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron irradiation on ferroelectric poly(vinylidene-trifluoroethylene) copolymers has been studied from both microscopic and macroscopic points of view. Microscopically, it is found by x-ray photoemission spectroscopy analysis and ultraviolet absorption that the irradiation damaging is mainly through dehydrofluorination and leads to double-bond production and crosslinking. On the other hand, dielectric permittivity, internal friction, x-ray diffraction, and differential scanning calorimetry experiments show that both the ferroelectric transition temperature Tc and the melting temperature Tm are lowered under irradiation. These various experimental features are consistently analyzed taking into account three main mechanisms resulting from the electron irradiation: (i) reduction of the crystallite mean size, (ii) changes in the internal pressure, and (iii) reduction of the dipolar energy.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 342-349 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferroelectric polarization of vinylidene fluoride-trifluoroethylene copolymers (70/30 mol %) is investigated using complementary measurements of the surface charge and the second harmonic intensity (at 530 nm) generated in the polymer from a Nd:YAG laser beam (at 1060 nm). Due to the nonzero electrical conductivity of the polymer (especially above room temperature), the nonlineear optical technique provides better measurement of the bulk polarization, its changes with time, the applied electric field, and temperature. First, we present optical results obtained on polarized films after removal of the electrodes: they confirm the proportionality between the second harmonic intensity and the square of the ferroelectric polarization, and the centrosymmetric character of the paraelectric phase; they also show the temperature dependence of the remanent polarization in the crystal phase. Second, we present simultaneous measurements of the surface charge and of the second harmonic intensity under very low-frequency applied voltage through transparent electrodes. The field dependence of the measured polarization is discussed in terms of a microstructural analysis of the dielectric properties in the semicrystalline material. It is also shown that unipolar voltages applied during long periods of time are able to produce charge injection and space charge in the vicinity of the electrodes which can result in screening of the applied electric field.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 529-541 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decay of sound in an auditorium due to absorption is central to the theory and practice of room acoustics. Within geometrical acoustics, this problem involves the partial trapping of chaotic ray trajectories in billiards, hence transient chaos. We first present a theoretical and numerical analysis of the decay of rays in 2-D chaotic billiards (2-D room acoustic models) and show that the existence of fluctuations (in the mean-free path and in the rate of phase space exploration) leads to modifications from the standard statistical theory. An ergodic wave theory of room acoustics based on a wave formulation is then discussed and tested by direct numerical calculations of the eigenmodes in 2-D billiards. Finally, we present a semiclassical calculation of the acoustic Green's functions in the time domain, based on a summation over rays, viewed as generalized wave impulses, and successfully compare its predictions with a direct numerical integration of the wave equation. This formalism provides a framework to link the geometrical ray description to the ergodic wave theory.
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