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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1510-1513 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thermal conductivity of nickel and gold films on quartz (thickness 0.4–8 μm) was measured by a modulated thermoreflectance technique recording the surface temperature profile. Model calculations predict an optimum frequency for measuring thermal transport within the film. Measurements on films with various thicknesses reveal a thermal conductivity close to the bulk value for nickel while gold films exhibit a reduced conductivity with decreasing film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2008-2013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By use of transmission electron microscopy and x-ray diffraction the degradation of the structure of epitaxial crystalline Mo–V multilayers has been studied during annealing between 1000 and 1250 K. In low vacuum (10−4 mbar), first, a polygonization (driven by the elastic mismatch due to the oxidation of V) took place, which led to a grain size in the order of the thickness of the individual layers (i.e., 1–2 nm). At longer annealing times, a partial recrystallization of Mo—parallel with a grain-boundary assisted discontinuous structural transformation—was observed. The (200) texture was preserved during the degradation process. At low temperatures and in low vacuum, this process was fast, while with improving the vacuum (up to 10−7 mbar) the polygonization was slower and above 1200 K the bulk diffusion controlled intermixing was observed with a final state of completely homogeneous solid solution. © 1999 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 804-806 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown by the Auger depth profiling technique that the concentration profile at the initially sharp Si/Ge interface in amorphous Si/Ge multilayers shifted but remained still sharp after a heat treatment at 680 K for 100 h. At the same time the fast diffusion of Si resulted in the formation of an almost homogeneous Ge(Si) amorphous solid solution, while there was practically no diffusion of Ge into the Si layer. This is direct evidence on the strong concentration dependence of the interdiffusion coefficient in amorphous Si/Ge system, and it is in accordance with the previous indirect result obtained from the measurements of the decay of the small angle Bragg peaks, as well as with finite difference simulations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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