Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1992-1994
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured minority-carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low-pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes. Carbon incorporation during crystal growth at low arsine partial pressures is of prime importance in understanding the origin of these very long lifetimes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101192
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