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Model of leakage characteristics of (Ba, Sr)TiO3 thin films (1998)

Maruno, S. ; Kuroiwa, T. ; Mikami, N. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 954-956

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have investigated the dependence of leakage current and capacitance of Pt/Ba0.5Sr0.5TiO3/Pt capacitors on annealing temperature under high vacuum conditions. It is observed that leakage currents increase asymmetrically for negative and positive bias voltage with increasing annealing temperature. A model of leakage current and capacitance characteristics has been proposed on the assumption of generation of oxygen vacancies by annealing at the interfaces of the dielectric film adjacent to the Pt electrodes. The model predicts the oxygen vacancies of about 1020 cm−3. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122050

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