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Band gap shrinkage in GaInAs/GaInAsP/InP multi-quantum well lasers (1992)

Park, S. H. ; Shim, J. I. ; Kudo, K. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 279-281

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We investigated a band gap shrinkage in both lattice-matched and compressive strained GaInAs/GaInAsP/InP multi-quantum well lasers. The band gap shrinkage is obtained from the broadening of the low energy side in the spectrum by considering effects of an intraband scattering and a fundamental band edge. It amounts to 20–25 meV at sheet carrier densities of above 1012 cm−2, and shows n1/1.3 dependence at low carrier densities and n1/3 dependence at higher densities. These dependencies agree well with theoretical predictions in the quantum well.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.352129

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