ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    facet.materialart.
    Unknown
    Optically switchable natural silk (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-03-03
    Description: An optically active bio-material is created by blending natural silk fibers with photoisomerizable chromophore molecules—azobenzenebromide (AzBr). The material converts the energy of unpolarized light directly into mechanical work with a well-defined direction of action. The feasibility of the idea to produce optically driven microsized actuators on the basis of bio-material (silk) is proven. The switching behavior of the embedded AzBr molecules was studied in terms of UV/Vis spectroscopy. To test the opto-mechanical properties of the modified fibers and the structural changes they undergo upon optically induced switching, single fiber X-ray diffraction with a micron-sized synchrotron radiation beam was combined in situ with optical switching as well as with mechanical testing and monitoring. The crystalline regions of silk are not modified by the presence of the guest molecules, hence occupy only the amorphous part of the fibers. It is shown that chromophore molecules embedded into fibers can be reversibly switched between the trans and cis conformation by illumination with light of defined wavelengths. The host fibers respond to this switching with a variation of the internal stress. The amplitude of the mechanical response is independent of the applied external stress and its characteristic time is shorter than the relaxation time of the usual mechanical response of silk.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2243-2246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of a significant number of studies on memory effect in alternating-current thin-film electroluminescent devices, the phenomenon is still unclear. In the present work we investigate some peculiarities of memory behavior of the devices from the viewpoint of the nonequilibrium carrier trapping time. Applying a combination of unique voltage staircase waveforms, we demonstrate that the degree of memory of the device is determined by the trapping time of the carriers at the insulator–semiconductor interface and the sulfur vacancy (Vs) concentration in the bulk of the active layer. We also show that separating electrons and holes before the pulse arrival can increase the effective field across the phosphor layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391219
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Comprehensive studies of electrohydrodynamic spraying of liquids (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3623-3626 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A technique for the comprehensive study of electrohydrodynamic spraying of liquids is offered that makes it possible to control several spraying parameters simultaneously by various physical methods: optical, electrical (current–voltage characteristic), mass spectrometric, and photographic. An unambiguons correlation among the form of a current–voltage characteristic, spraying modes, and the shape of liquid surface has been obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145478
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Self-heating in small mesa structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5578-5580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study analytically and numerically a problem of self-heating in small mesa structures. Our results show that self-heating is proportional to a characteristic in-plane size of the mesa. Experimental data for small high-Tc superconductor Bi2212 mesas are in qualitative agreement with our calculations. We estimate self-heating in Bi2212 mesas with different sizes and demonstrate that self-heating can effectively be obviated in small mesa structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367880
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Band gap engineering of thin-film electroluminescent devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3223-3225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce an alternative concept to increase the efficiency and brightness of thin-film electroluminescent (TFEL) devices. The method utilizes band gap engineering of the active layer of the device. The initial steps of our work using a ZnSxSe1−x alloy are also presented to demonstrate the workability of the method. This letter discusses the related obstacles and future potentials of the band gap engineering for monochrome and color TFEL devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1374236
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of alternating-current thin-film electroluminescent devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 351-353 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We suggest a formalism built on the analogy between the pressure-volume (P–V˜) diagram of a gas system and the charge-voltage (Q–V) characteristics of the alternating-current thin-film electroluminescent (ACTFEL) device. The formalism extends the understanding of the processes in ACTFEL devices and the complete characterization of their internal parameters based on the Q–V diagram.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121831
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Direct observation of traps responsible for positive space charge in alternating-current thin-film electroluminescent devices (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1120-1122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Space charge has significant influence on the operation of alternating-current thin-film electroluminescent displays. This letter introduces a relatively simple method for direct observation of the distribution of traps responsible for the space charge in the active layer of the devices. Contribution of native and dopant defects in the space charge formation is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123462
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...