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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties at the metal-insulator transition in thermochromic VO2−xFx thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3327-3329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermochromic VO2−xFx thin films were prepared by reactive rf magnetron sputtering followed by annealing post-treatment. Electrical and optical properties were measured as a function of temperature. The transmittance and reflectance were essentially wavelength independent at 65 °C, i.e., at the metal-insulator transition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341514
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  • 2
    Electronic Resource
    Electronic Resource
    Thermochromic sputter-deposited vanadium oxyfluoride coatings with low luminous absorptance (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of VOxFy were made by rf magnetron sputtering of V in Ar+O2+CF4. They were analyzed by Rutherford backscattering spectrometry and transmission electron microscopy. Optical and electrical properties changed within narrow temperature ranges. These results resemble those of thermochromic VO2, although VOxFy has significantly enhanced transmittance, lowered conductance, and marginally depressed switching temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102388
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  • 3
    Electronic Resource
    Electronic Resource
    Photoinitiated electron transfer to selected physisorbed alkyl bromides: The effects of alkyl chain length on dissociation cross sections (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 10526-10538 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report the results of measurements of the cross section as a function of wavelength (351, 248, and 193 nm) for photoinitiated dissociative electron attachment to three normal alkyl bromides [CH3(CH2)n−1Br, n=1, 2, and 3] physisorbed on GaAs(110). Upon UV exposure, the molecules undergo C–Br bond cleavage due to a substrate-mediated electron-transfer process. The cross sections for all three molecules increase monotonically with decreasing wavelength. Our results suggest a ∼1 eV higher threshold for dissociation of ethyl and propyl bromide than for methyl bromide. A simple model of the electron-transfer process is employed to estimate the peak per-electron cross section for dissociative attachment in the monolayer. We find that the cross sections for the physisorbed molecules are approximately five times smaller than those for gas-phase molecules, due to a reduction in the lifetime of the molecular anion in the vicinity of the surface. In addition, we also find an increase in cross section with chain length very similar to that observed in the gas phase; the gas-phase behavior has been explained by an increase in the anion lifetime with chain length. Our results suggest that while quenching of the molecular anion at the surface is important, it does not eliminate the progression of anion lifetime with chain length. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478984
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetics of a dimer–dimer irreversible catalytic surface reaction (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 5054-5059 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetics of irreversible dimer–dimer surface reactions of the type A2+B2→2AB with desorption of dimer B2 has been investigated by means of Monte Carlo simulation. For a desorption probability (P) of B2 equal to zero, a single discontinuous transition separating an A+vacancies saturated surface from a B+vacancies saturated surface is obtained at yB2=0.5 (yB2 is the partial pressure of B2 in the gas phase). With the increase in P, a steady reactive state which is separated from the poisoned states by two continuous transitions is obtained for this system. The position of the transition points depends upon the value of P. For P equal to one, a single continuous transition at yB2=0.538 separates a poisoned state from a steady reactive state. The window width, which defines the steady reactive state, shows an exponential behavior with P. Preliminary studies have been under taken to determine the universality class of the system for different P values. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.477119
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  • 5
    Electronic Resource
    Electronic Resource
    The wavelength dependence of photoinduced hot electron dissociative attachment to methyl bromide adsorbed on gallium arsenide (110) (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 109 (1998), S. 8045-8057 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The wavelength dependence of photoinduced dissociation of CH3Br via dissociative electron attachment (DEA) of "hot" electrons for one monolayer CH3Br adsorbed on GaAs(110) has been measured. The cross section for dissociation is found to decrease monotonically by two orders of magnitude as the incident wavelength is varied from 308 to 550 nm. There is an apparent threshold near 490 nm (2.5 eV), well below the gas phase photodissociation threshold near 250 nm (5.0 eV), but in good agreement with a simple estimate based on expected values for the decrease in the photoemission threshold and the lowering of the molecular affinity level upon adsorption of CH3Br on a semiconductor surface. The observed threshold is found to move to higher energy as dissociation of the monolayer proceeds. Based on the work of Hasselbrink and co-workers [F. Weik, A. de Meijere, and E. Hasselbrink, J. Chem. Phys. 99, 682 (1993)], a simple theoretical model is developed which considers the tunneling of hot electrons through the interfacial barrier between the physisorbed CH3Br and the GaAs. The results of our theoretical model in conjunction with those of earlier ab initio calculations [S. Black, R. Friesner, P. H. Lu, and R. M. Osgood, Jr., Surf. Sci. 382, 154 (1997)] suggest that the adsorbate affinity level is centered at ∼0.6 eV above the (adsorbate- modified) vacuum level of the substrate. This value corresponds to a ∼1.8 eV stabilization of the negative ion resonance upon adsorption. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.476970
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  • 6
    Electronic Resource
    Electronic Resource
    A Monte Carlo study of subsurface effect on catalytic surface reactions (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 8890-8895 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effect of the subsurface in monomer–dimer (CO-O2) surface reaction is studied by Monte Carlo simulation. The presence of the subsurface adds some extra reaction steps to the usual three. It is shown that the presence of the subsurface favours the enhancement of the steady reactive state by reducing appreciably the poisoning of the surface by the adsorbed dimer atoms. Under certain conditions the usual second order phase transition in CO−O2 reaction can be eliminated. The role played by the two way diffusion of adsorbed dimer atoms between surface and subsurface in the variation of steady reactive state is clearly illustrated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473952
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  • 7
    Electronic Resource
    Electronic Resource
    Photochemistry of dimethylcadmium on compound semiconductor surfaces (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 6552-6563 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present dynamical studies of the surface photochemistry of dimethylcadmium (DMCd) adsorbed on GaAs(110) and CdTe(110) surfaces. This important precursor for chemical vapor deposition is studied using time-of-flight (TOF) spectroscopy in conjunction with temperature programmed desorption (TPD). For the case of greater than one monolayer coverages, on these surfaces, both photofragmentation and photodesorption are observed following irradiation. The relative probabilities of these two processes are found to be strongly dependent on adsorbate coverage and incident photon energy. Direct photoabsorption by the adsorbed molecule is found to dominate the photofragmentation process, with the substrate strongly reducing the probability of photofragmentation at low coverages due to the operation of substrate mediated channels for excited state relaxation. The CH3 fragments observed following photodissociation are found to have kinetic energies that are invariant with the energy of the exciting photon (193 and 248 nm), an effect attributed to an efficient curve crossing between excited states in this molecule. The molecular desorption process is found to exhibit an unusual coverage dependence which is linked to the probability of deposition of a significant amount of vibrational excitation in the overlayer via substrate mediated de-excitation processes. Following the adsorption of one monolayer on the GaAs substrate, the photochemistry observed is significantly different due to the thermal dissociation of DMCd to form adsorbed methylgallium moieties. In this case, multiple features are observed in the TOF spectrum with kinetic energies significantly different to those observed for the gas phase or physisorbed molecule. Correlation of the TOF spectral features with thermal desorption data allows these TOF features to be assigned to specific adsorbed intermediates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473655
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  • 8
    Electronic Resource
    Electronic Resource
    Electrochromism and thermochromism of LixVO2 thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3231-3234 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of LixVO2(0≤x(approximately-less-than)0.43) were made by reactive sputtering and annealing post-treatment, followed by electrochemical cycling in an electrolyte containing LiClO4. The films showed electrochromism, and bleached under Li insertion. Weak thermochromism was observed with a drop of the transmittance, accompanied by a conductivity increase, at ∼60 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348542
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  • 9
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    Precipitation control and activation enhancement in boron-doped p+-BaSi2 films grown by molecular beam epitaxy (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-06-25
    Description: Precipitation free boron (B)-doped as-grown p + -BaSi 2 layer is essential for the BaSi 2 p-n junction solar cells. In this article, B-doped p-BaSi 2 layers were grown by molecular beam epitaxy on Si(111) substrates, and the influence of substrate growth temperature ( T S ) and B temperature ( T B ) in the Knudsen cell crucible were investigated on the formation of B precipitates and the activation efficiency. The hole concentration, p , reached 1.0 × 10 19  cm −3 at room temperature for T S  = 600 and T B  = 1550 °C. However, the activation rate of B was only 0.1%. Furthermore, the B precipitates were observed by transmission electron microscopy (TEM). When the T S was raised to 650 °C and the T B was decreased to 1350 °C, the p reached 6.8 × 10 19  cm −3 , and the activation rate increased to more than 20%. No precipitation of B was also confirmed by TEM.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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