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  • 1
    Publication Date: 2015-02-21
    Description: Intrinsic localized modes (ILMs) are concentrations of vibrational energy in periodic systems/lattices due to the combined influences of nonlinearity and discreteness. Moreover, ILMs can move within the system and may strongly interact with an impurity, such as a stiffness change, mass variation, etc. Numerous scientific fields have uncovered examples and evidence of ILMs, motivating a multidisciplinary pursuit to rigorously understand the underlying principles. In spite of the diverse technical studies, a characterization of ILM interaction behaviors with multiple impurities in dissipative lattices remains outstanding. The insights on such behaviors may be broadly useful when dynamic measurements are the only accessible features of the periodic system. For instance, one may guide an ILM within the lattice using a deliberately applied and steered impurity and harness the observed interaction behaviors with a second, static (immovable) impurity/defect to identify how the underlying lattice is different at the second, defected site, whether or not one knew the position of the defect a priori . In this spirit, this research studies, analyzes, and characterizes the interaction types amongst an ILM and multiple impurities, and devises a method to identify a static defect impurity using quantitatively and qualitatively distinct interaction phenomena. The method is found to be robust to moderate levels of lattice stiffness heterogeneity and is applicable to monitor various property changes that represent impurities. Finally, experimental studies verify that ILMs interact with multiple impurities in unique ways such that defect features may be effectively identified.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1510-1520 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various types of InP-based semiconductor lasers, Fabry–Perot (FP), and distributed feedback (DFB), in different wavelength regions of 1.3, 1.48, and 1.55 μm have been subjected to human-body-model electrostatic discharge (ESD) testing. The reverse V-I characteristics of these diode lasers were found to be generally most sensitive in detecting ESD damage than the forward characteristics (e.g., threshold current) of the laser. The laser ESD failure voltages were much lower for the reverse than the forward polarity and DFB lasers were found to be more vulnerable to ESD than FP lasers. The failure mechanism was found to be due to localized melting—a thermal effect—in both polarities of ESD testing. We also report the study of the latent ESD effects on the long-term aging rates of semiconductor lasers.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use, transportation, and storage of the hazardous gas, arsine, raise serious safety issues. Consequently, there is considerable interest in the generation of arsine on demand from less hazardous substances. We report the first use of in situ generated arsine for III-V epitaxy. The gas has been generated electrochemically at an arsenic cathode in an aqueous electrolyte and used to supply a hydride vapor phase epitaxy reactor. InGaAs/InP test structures were grown on InP substrates and were similar to comparison structures grown using tank arsine. Recessed-gate enhanced Schottky metal-semiconductor field-effect transistors were fabricated and exhibited well-behaved current-voltage characteristics.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2014-08-08
    Description: Ni 3 Fe/(Ni, Fe)O thin films with bilayer and nanocrystallite dispersion morphologies are prepared with a dual ion beam deposition technique permitting precise control of nanocrystallite growth, composition, and admixtures. A bilayer morphology provides a Ni 3 Fe-to-NiO interface, while the dispersion films have different mixtures of Ni 3 Fe, NiO, and FeO nanocrystallites. Using detailed analyses of high resolution transmission electron microscopy images with Multislice simulations, the nanocrystallites' structures and phases are determined, and the intermixing between the Ni 3 Fe, NiO, and FeO interfaces is quantified. From field-cooled hysteresis loops, the exchange bias loop shift from spin interactions at the interfaces are determined. With similar interfacial molar ratios of FM-to-AF, we find the exchange bias field essentially unchanged. However, when the interfacial ratio of FM to AF was FM rich, the exchange bias field increases. Since the FM/AF interface ‘contact’ areas in the nanocrystallite dispersion films are larger than that of the bilayer film, and the nanocrystallite dispersions exhibit larger FM-to-AF interfacial contributions to the magnetism, we attribute the changes in the exchange bias to be from increases in the interfacial segments that suffer defects (such as vacancies and bond distortions), that also affects the coercive fields.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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