ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A reliable circuit configuration is described for stacking power metal–oxide semiconductor field effect transistors (MOSFETs). The resulting circuit has a hold off voltage N times larger than a single power MOSFET, where N is the number of power MOSFETs used. The capability to switch higher voltages and thus greater amounts of power, into a 50 Ω load, in approximately the same time as a single device is realized. Design considerations are presented for selecting a power MOSFET. Using the design method presented, a 1.4 kV pulse generator, into 50 Ω, with a 2 ns rise time and negligible jitter is designed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1143366
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